DMP21D0UFB4

A Product Line of
Diodes Incorporated
DMP21D0UFB4
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
Features and Benefits
RDS(on)
ID @ TA = 25°C
495mΩ @ VGS = -4.5V
-0.77A
690mΩ @ VGS = -2.5V
-0.67A
960mΩ @ VGS = -1.8V
-0.57A
2
Footprint of just 0.6mm – thirteen times smaller than SOT23
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
ESD Protected Gate 3KV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Portable electronics
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Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
S
Gate
D
G
Top View
Internal Schematic
Bottom View
ESD PROTECTED TO 3kV
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB4-7B
Notes:
Marking
NO
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP21D0UFB4-7B
NO
NO = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
1 of 7
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February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current (Note 6)
Thermal Characteristics
Value
-20
±8
Unit
V
V
ID
-0.77
-0.55
-1.17
A
IDM
-5.0
A
Value
0.43
0.99
293
126
-55 to +150
Unit
W
W
°C/W
°C/W
°C
TA = 25°C (Note 4)
TA = 85°C (Note 4)
TA = 25°C (Note 5)
Steady
State
Continuous Drain Current
Symbol
VDSS
VGSS
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Thermal Characteristics
10
P(pk), PEAK TRANSIENT POWER (W)
9
Single Pulse
RθJA = 120°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
8
7
6
5
4
3
2
1
0
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (SEC)
Fig. 1 Single Pulse Maximum Power Dissipation
100
1,000
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 120°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 2 Transient Thermal Response
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10
100
1,000
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB4
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
-1
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-
-0.7
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
|Yfs|
VSD
50
-
-
495
690
960
-1.2
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -400mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -100mA
VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
76.5
13.7
10.7
195
1.5
1.0
0.2
0.3
7.1
8.0
31.7
18.5
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
-
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -8V, VDS = -15V, ID = -1A
VGS = -4.5V, VDS = -15V,
ID = -1A
VDS = -10V, -ID = 1A
VGS = -4.5V, RG = 6Ω
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
2.0
2.0
VGS = -4.5V
VGS = -4.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -3.0V
VGS = -2.5V
1.5
VGS = -2.0V
1.0
VGS = -1.8V
0.5
VGS = -1.5V
1.5
VDS = -5V
1.0
0.5
TA = 150°C
T A = 125°C
VGS = -1.2V
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristic
DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
0
5
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TA = 85°C
TA = 25°C
T A = -55°C
0
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
3.0
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
1.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMP21D0UFB4
0.9
0.8
0.7
0.6
VGS = -1.8V
0.5
0.4
VGS = -2.5V
0.3
VGS = -4.5V
0.2
0.1
0
0
0.4
0.8
1.2
1.6
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
2.0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.7
1.5
1.3
1.1
VGS = -5.0V
ID = -500mA
0.9
VGS = -2.5V
ID = -250mA
0.7
0.5
-50
VGS = -4.5V
0.6
0.5
T A = 150°C
0.4
TA = 125°C
TA = 85°C
0.3
TA = 25°C
0.2
T A = -55°C
0.1
0
0
0.4
0.8
1.2
1.6
-ID, DRAIN CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
2.0
0.8
0.7
0.6
VGS = -2.5V
ID = -250mA
0.5
0.4
0.3
VGS = -5.0V
ID = -500mA
0.2
0.1
0
-50
2.0
1.4
1.8
1.2
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.7
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 On-Resistance Variation with Temperature
1.0
ID = -1mA
0.8
0.6
0.8
ID = -250µA
0.4
1.6
1.4
1.2
T A = 25°C
1.0
0.8
0.6
0.4
0.2
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
4 of 7
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0
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Diode Forward Voltage vs. Current
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFB4
100,000
IGSS, LEAKAGE CURRENT (nA)
-IDSS, LEAKAGE CURRENT (nA)
10,000
1,000
TA = 150°C
TA = 125°C
100
T A = 85°C
10
10,000
TA = 25°C
1
0
TA = 125°C
1,000
100
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
T A = 85°C
T A = 25°C
10
TA = -55°C
1
0.1
0
4
T A = 150°C
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
100,000
CT, JUNCTION CAPACITANCE (pF)
IGSS, LEAKAGE CURRENT (nA)
f = 1MHz
10,000
TA = 150°C
TA = 125°C
1,000
100
TA = 85°C
TA = 25°C
10
T A = -55°C
1
0.1
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig.13 Leakage Current vs. Gate-Source Voltage
Ciss
Coss
Crss
0
2
4
6
8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
-VGS, GATE-SOURCE VOLTAGE (V)
8
7
6
5
4
3
2
1
0
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg, TOTAL GATE CHARGE (nC)
Fig. 15 Gate-Charge Characteristics
DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
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A Product Line of
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DMP21D0UFB4
Package Outline Dimensions
A
A1
D
b1
E
e
b2
L2
L3
X2-DFN1006-3
Dim Min
Max
Typ
A
0.40
⎯
⎯
A1
0
0.05 0.03
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.05 1.00
E
0.55 0.65 0.60
e
0.35
⎯
⎯
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L1
Suggested Pad Layout
C
Dimensions
Z
G1
G2
X
X1
Y
C
X1
X
G2
G1
Y
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
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DMP21D0UFB4
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2012, Diodes Incorporated
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DMP21D0UFB4
Datasheet number: DS35279 Rev. 3 - 2
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© Diodes Incorporated