TM Speed PROFET BT F5 0060- 1T E A Smart High-Side Power Switch, One Channel High PWM Frequencies Datasheet Rev. 1.2, 2011-09-01 Automotive BTF50060-1TEA 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Definition of Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 4.3 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.2 5.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.3.7 5.4 5.4.1 5.4.2 5.4.3 5.5 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching a Resisitve Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching an Inductive Load - Infineon® SMART CLAMPING . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching a Capacitive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inverse Load Current Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection by Over Current Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection by Over Temperature Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Infineon® INTELLIGENT LATCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection during Loss of Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection during Loss of Load or Loss of VS Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection during ESD or Over Voltage Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sense Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Enhancing Accuracy of the Sense Output by End of Line Calibration . . . . . . . . . . . . . . . . . . . . . . . Short-to-Battery detection / Open Load Detection in OFF state . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage Shutdown & Restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 12 13 14 14 14 16 16 17 17 17 18 18 19 20 20 22 22 23 6 6.1 6.2 6.2.1 6.2.2 6.2.3 6.2.4 Electrical Characteristics BTF50060-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Parameter dependencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnosis Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 24 28 28 30 31 32 7 7.1 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 8 Package Outlines and Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Datasheet Speed PROFETTM 2 5 5 5 5 Rev. 1.2, 2011-09-01 Smart High-Side Power Switch, One Channel High PWM Frequencies 1 BTF50060-1TEA Overview Application • • • Driving all types of resistive, inductive and capacitive loads Most suitable for driving loads with PWM frequency from 0Hz (DC operation) up to 33kHz and above Drives valves, coils, and motors, with inrush currents up to 60 A Features • • • • • • • • • • Optimized for PWM frequencies of approx. 25 kHz PG-TO252-5-11 3.3V and 5V compatible logic inputs Advanced analog load current sense signal Designed for easy current sense calibration Embedded diagnosis features (e.g. open load in ON and OFF state) Embedded protection functions (e.g. over current shutdown, over temperature shutdown) Infineon® INTELLIGENT LATCH Infineon® SMART CLAMPING Green Product (RoHS compliant) AEC Qualified Description Embedded in a PG-TO252-5-11 package, the BTF50060-1TEA is a 6mΩ single channel Smart High-Side Power Switch. It is based on Smart power chip on chip technology with a P-channel vertical power MOSFET, providing protective and diagnostic functions. It is specially designed to drive loads in the harsh automotive environment. Table 1 Product Summary Parameter Symbol Values Range of typical PWM frequencies fPWM RDS(ON)_150 VS(NOM) IL(NOM) IS(OFF) IL(SC) -VS(REV) 0 Hz ... 33 kHz Maximum On-state Resistance at Tj = 150 °C Nominal Supply Voltage Range for Operation Nominal Load Current (DC operation) Typical Stand-by Current at Tj = 25 °C Minimum short circuit current shutdown threshold Maximum reverse battery voltage 12 mΩ 6 V … 19 V 16.5 A 5 µA 60 A 16 V Type Package Marking BTF50060-1TEA PG-TO252-5-11 F50060A Datasheet Speed PROFETTM 3 Rev. 1.2, 2011-09-01 BTF50060-1TEA Block Diagram Embedded Protection Functions • • • • Infineon® INTELLIGENT LATCH - resettable latch resulting from protective switch OFF Over current protection by short-circuit shutdown Overload protection by over-temperature shutdown Infineon® SMART CLAMPING Embedded Diagnosis Functions • • • • Advanced analog load current sense signal with defined positive offset current; enabling load diagnosis like Open Load in ON state, overload Providing defined fault signal Open Load detection in OFF state Short-to-battery detection 2 Block Diagram ESD + over voltage protection Vs A Input circuit RIN Smart Clamping Diagnosis IN Gate driver & Protection Temp IS Figure 1 Sense output OUT BlockDiagram.emf GND Block Diagram of BTF50060-1TEA For a Diagram of Diagnosis & Protection block, please see Figure 15. Datasheet Speed PROFETTM 4 Rev. 1.2, 2011-09-01 BTF50060-1TEA Pin Configuration 3 Pin Configuration 3.1 Pin Assignment IS VS 4 5 IN 2 3 (OUT) GND 1 OUT (TAB) PinConfiguration .emf Figure 2 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 GND Ground; Ground connection for control chip. 2 IN Input; Digital 3.3 V and 5 V compatible logic input; activates power switch if set to HIGH level; Includes internal pull-down resistor RIN. Tab; 31) OUT Output; Protected high side power output 4 IS Sense; Provides analog sense current signal and defined fault signal. 5 Vs Supply Voltage; Positive supply voltage for Logic and Power Stage2) 1) Tab and pin 3 are internally connected. Pin 3 is cut. 2) PCB traces have to be designed to withstand maximum current occuring in the application. 3.3 Definition of Terms Figure 3 shows all terms used for currents and voltages in this data sheet, with associated convention for positive values. VS IS IIN VIN VSIS VS IN OUT IS GND VSD IL IIS V OUT VIS IGND Terms.emf Figure 3 Definition of currents and voltages Datasheet Speed PROFETTM 5 Rev. 1.2, 2011-09-01 BTF50060-1TEA General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings 1) Tj = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Min. T y p . Unit Note / Test Condition Number V – P_4.1 P_4.2 P_4.3 Max. Supply voltages Supply Voltage Reverse Polarity Voltage on pin GND, IS Supply voltage for short circuit protection VS |-VS(REV)| -0.3 0 16 V 2) 3) VBAT(SC) 0 28 V 4) 28 , RECU = 20mΩ, RCable = 6mΩ/m, LCable = 1µH/m, l = 0 or 5m, see Chapter 5.3.1 – 45 V RI = 2 Ω 5) , RL = 1.0 Ω, td = 400ms P_4.4 nRSC1 – 1 E6 (Grade A) – 4)6) P_4.21 VIN IIN VIS IIS IGND -0.3 6 V – P_4.5 -2 2 mA t < 2min P_4.6 -0.3 VS V – P_4.7 -2 10 mA – P_4.8 -2 10 mA – P_4.9 -IL(SC) IL(SC) A – P_4.10 – 280 mJ VS = 13.5V IL(0) = 20A Tj(0) = 150°C P_4.11 Supply voltage for load dump VS(LD) protection Short Circuit Capability Short circuit cycle capability IN + IS + GND pin Voltage at IN pin Current through IN pin Voltage at IS pin Current through IS pin Current through GND pin Power stage IL Maximum energy dissipation EAS Load current for switching OFF an inductive load - single pulse See Figure 4 and Chapter 5.1.2 Maximum energy dissipation EAR for switching OFF an inductive load - repetitive pulse – 84 mJ VS = 13.5V IL(0) = 20A Tj(0) = 105°C P_4.13 See Figure 4 and Chapter 5.1.2 Temperatures Junction Temperature Datasheet Speed PROFETTM Tj -40 150 6 °C – P_4.14 Rev. 1.2, 2011-09-01 BTF50060-1TEA General Product Characteristics Table 2 Absolute Maximum Ratings (cont’d)1) Tj = -40°C to 150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Min. T y p . Unit Note / Test Condition Number Max. Dynamic temperature increase while switching ΔTj – 60 K – P_4.15 Storage Temperature Tstg -55 150 °C – P_4.16 ESD Resistivity HBM all Pins to GND VESD1 -2 2 kV HBM7) P_4.17 ESD Resistivity HBM VS vs. GND, VS vs. OUT, OUT vs. GND VESD2 -4 4 kV HBM7) P_4.18 ESD Resistivity CDM all pins to GND VESD3 -500 500 V CDM8) P_4.19 ESD Resistivity CDM corner pins VESD4 -750 750 V CDM8) P_4.20 ESD Susceptibility 1) Not subject to production test, specified by design. 2) In case of reverse polarity voltage on pin IN, IIN needs to be limited (see P_4.6) by external resistor RINPUT, see Figure 45. 3) In case of reverse polarity voltage, current through the OUT pin needs to be limited by external circuitry to prevent over heating (see P_4.14). Power dissipation during reverse polarity voltage can be calculated by Equation (3). Please note, build-in protection functions are not available during reverse polarity condition. 4) In accordance to AEC Q100-012 and AEC Q101-006. 5) VS(LD) is set up without the DUT connected to the generator per ISO 7637-1. 6) Test aborted after 1 E6 cycles. 7) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001-2010 8) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1 Datasheet Speed PROFETTM 7 Rev. 1.2, 2011-09-01 BTF50060-1TEA General Product Characteristics 1000 E A [mJ] 100 10 1 I L(0) [A] 10 100 E_AR (Tj(0) = 105°C) E_AS (Tj(0) = 150°C) Figure 4 Maximum energy dissipation for switching OFF an inductive load EA vs. load current Notes 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet Speed PROFETTM 8 Rev. 1.2, 2011-09-01 BTF50060-1TEA General Product Characteristics 4.2 Functional Range Table 3 Functional Range Parameter Symbol Values Min. T y p . Unit Note / Test Condition Number Max. Nominal Supply Voltage Range for Operation VS(NOM) 6 19 V – P_4.23 Extended Supply Voltage Range for Operation VS(EXT) VS(UV)ON 28 V 1)2) P_4.24 Extended Supply Voltage Range for short dynamic undervoltage swings VS(DYN) VS(UV)OFF VS(UV)ON V 1)2)3) P_4.25 Junction Temperature Tj -40 150 °C – P_4.26 1) see Chapter 5.5, Undervoltage turn ON voltage and Undervoltage turn OFF voltage 2) In extended supply voltage range, the device is functional but electrical parameters are not specified. 3) Operation only if supply voltage was in range of VS(EXT) before undervoltage swing. Otherwise, device will stay OFF. 6V 13.5V VS(UV)OFF VS(UV)ON VS(NOM) V S(DYN) 19V 28V VS(EXT) VS FunctionalRange.emf Figure 5 Overview of functional ranges Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. Datasheet Speed PROFETTM 9 Rev. 1.2, 2011-09-01 BTF50060-1TEA General Product Characteristics 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Table 4 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. Thermal Resistance Junction to Case RthJC 1) – 1 1.1 K/W – P_4.27 Thermal Resistance Junction to Ambient - 2s2p RthJA_2s2p1) – 22 – K/W 2) P_4.29 1) Not subject to production test, specified by design. 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 mm Cu, 2 × 35 mm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. Figure 6 and Figure 7 are showing the typical thermal impedance of BTF50060-1TEA mounted according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s and 2s2p board. The product (chip + package) was simulated on a 76.4 × 114.3 × 1.5 mm board with 2 inner copper layers (2× 70µm Cu, 2× 35µm Cu). Where applicable, a thermal via array under the exposed pad contacted the first inner copper layer. The PCB layer structure is shown in Figure 8. The PCB layout is shown in Figure 9. Figure 6 ! ! Typical Transient Thermal Impedance Zth(JA) = f(tP) for different cooling areas Datasheet Speed PROFETTM Figure 7 10 Typical Transient Thermal Impedance Zth(JA) = f(tP) for PWM operation with duty cycles D = t / tperiod on a 2s2p PCB Rev. 1.2, 2011-09-01 BTF50060-1TEA General Product Characteristics 2s2p PCB 1s PCB 70µm 70µm 1.5mm 1.5mm 35µm PCB 1s.emf 0.3mm Figure 8 PCB 2s2p.emf Cross section of 1s and 2s2p PCB used for ZthJA simulation 600mm² 300mm² min PCB front.emf Figure 9 Front view of PCB layout used for ZthJA simulation Datasheet Speed PROFETTM 11 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description 5 Functional Description 5.1 Power Stage The power stage is built by a P-channel vertical power MOSFET (DMOS). The ON-state resistance RDS(ON) depends on the supply voltage VS as well as the junction temperature Tj. Figure 26 shows the dependencies for the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 5.3.4. A HIGH signal at the input pin (see Chapter 5.2) causes the power DMOS to switch ON. A LOW signal at the input pin causes the power DMOS to switch OFF. 5.1.1 Switching a Resisitve Load Defined slew rates for turn ON and OFF as well as edge shaping support PWM’ing of the load while achieving lowest EMC emission at minimum switching losses. Figure 10 shows the typical timing when switching a resistive load. Please note: if the devices logic is inactive, e.g. because the IN signal was LOW for t > tRESET, the logic of the device needs a wake-up time of twake for turning the output ON in addition to the turn ON time tON. See also Figure 11. VIN VIN(H),min VIN(L),max tON VOUT t tOFF tr tf 90% VS 70% VS (dV/dt)ON (dV/dt)OFF 30% VS 10% VS t SwitchingResistiveLoad_F.emf Figure 10 Switching a resistive load Datasheet Speed PROFETTM 12 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description t > tRESET VIN tRESET VOUT t < t RESET t wake+tON twake+t sIS(ON) I IS tON t t sIS(ON) t I IS(OFFSET) t wake-up.emf Figure 11 Wake up timing 5.1.2 Switching an Inductive Load - Infineon® SMART CLAMPING When switching OFF inductive loads with no path for load current freewheeling available, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). To prevent the destruction of the device due to high voltages, there is a voltage clamp mechanism implemented that keeps the negative output voltage at a certain level (-VOUT=VS-VSD(CL)). Please refer to Figure 1 and Figure 12 for details. V OUT VS ON OFF V SD(CL) t IL t Figure 12 SwitchingInductance.emf Switching an inductance Nevertheless, the energy capability of the device is limited because the energy is converted into heat. That’s why the maximum allowed load inductance is limited as well. Please see Figure 4 for limitations of energy and load inductance. For calculationg the demagnization energy, Equation (1) may be used: V S – V SD ( CL ) RL × IL ⎞ L E A = V SD ( CL ) × ------ × -------------------------------× ln ⎛ 1 + ---------------------------------+I ⎝ RL RL V SD ( CL ) – V S⎠ L (1) The equation can be simplified under the assumption of RL = 0 Ω to: V SD ( CL ) 2 1 E A = --- × L × IL × -------------------------------2 V SD ( CL ) – V S (2) The BTF50060-1TEA provides Infineon® SMART CLAMPING functionality. To optimize the energy capability for single and parallel operation, the clamp voltage VSD(CL) increases over the junction temperature Tj and load current IL. Figure 33 shows the dependency from Tj for the typical VSD(CL). Please refer also to Figure 15. Datasheet Speed PROFETTM 13 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description 5.1.3 Switching a Capacitive Load A capacitive load’s dominant characteristic is it’s inrush current. The BTF50060-1TEA can support inrush currents up to IL(SC). If the inrush current reaches IL(SC), the device may detect a short circuit condition and switches OFF. For a description of the short circuit protection mechanism, please refer to Chapter 5.3.1. 5.1.4 Inverse Load Current Operation In case of a negative load current, e.g. caused by load operating as a generator, the device can not block a current flowing through the intrinsic body diode. See Figure 13. The power stage of the device can be switched ON or stays ON as long as VIN = HIGH, reaching the same RDS(ON) as for positive load currents, if no fault condition is detected. In case of fault condition, the logic of the device will switch OFF the power stage and supply a fault signal IIS(fault). Since the device can not block a negative load current (even under fault conditions), it can not protect itself from overload condition. In the application, overload conditions, e.g. over temperature, must not occur during inverse load current operation. VS logic -IL(inv) GND G LOAD OUT Invers.emf Figure 13 Inverse load current operation 5.2 Input Circuit The input circuitry is compatible with 3.3 and 5V micro controllers. If VIN is set to VIN = VIN(H) (VIN = HIGH), the device will turn ON. See Figure 10 for the timings. If VIN is set to VIN = VIN(L) (VIN = LOW), the power stage of the device will be turned OFF. The input circuitry has a hysteresis ΔVIN. The input circuitry is compatible with PWM applications. Figure 14 shows the electrical equivalent input circuitry. The logic of the BTF50060-1TEA stays active for a delay time tRESET after the switch OFF signal. IN R IN GND Figure 14 InputCircuitry.emf Input pin circuitry Applying an input voltage of VIN > 20V (absolute maximum ratings exceeded!) may force the BTF50060-1TEA to deactivate parts of the logic circuitry. This includes the undervoltage shutdown, the undervoltage restart delay, and the analog sense function. In this case, also the short circuit shutdown threshold IL(SC) is set to typically 50A, and Datasheet Speed PROFETTM 14 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description the latch reset time tRESET is reduced to typically 200µs. To reset this behavior, set input voltage to VIN = LOW for t>300µs. Datasheet Speed PROFETTM 15 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description 5.3 Protection Functions The BTF50060-1TEA provides embedded protective functions. Integrated protection functions are designed to prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are designed for neither continuous nor repetitive operation. In case of overload, high inrush currents, or short circuit to ground, the BTF50060-1TEA offers several protection mechanisms. Figure 15 describes the functionality of the diagnosis and protection block. Diagnosis & Protection Undervoltage protection delay = td(UV) Vs VS(UV) no delay Input circuit No Undervoltage IN & No FAULT Gate driver INTELLIGENT LATCH timer reset no delay Q S Temp Tjt Q R 1 delay = tRESET Sense output ≥1 I L(SC) A 0 1 IIS(fault) ENABLE ≥1 OUT VOUT(OL) R OUT(GND) Open Load at OFF DiagnosisProtection. emf Figure 15 Diagram of Diagnosis & Protection block 5.3.1 Protection by Over Current Shutdown The internal logic permanently monitors the load current IL. In the event of a load current exceeding the short circuit shutdown threshold (IL>IL(SC)), the output will switch OFF with a latching behavior. During an over current shutdown, an overshooting IL(SC)peak may occur, depending on the short circuit impedances. For the case the device is in ON state while short circuit appears, the typical overshooting IL(SC)peak as a function of the steepness of the short circuit current dISC/dt, see Chapter 6.2.3. For a detailed description of the latching behavior, please see Chapter 5.3.3. At lower supply voltages the current tripping level IL(SC) will decrease depending on the supply voltage. At VS = 4.7V, the current tripping level will be reduced to IL(SC)LV. Please refer to Figure 35 for typical current tripping level IL(SC) as a function of the supply voltage VS. Datasheet Speed PROFETTM 16 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description 5.3.2 Protection by Over Temperature Shutdown The internal logic permanently monitors the junction temperature of the output stage. In the event of an over temperature (Tj > Tjt) the output will immediately switch OFF with a latching behavior, see Chapter 5.3.3 for details. 5.3.3 Infineon® INTELLIGENT LATCH The BTF50060-1TEA provides Infineon® INTELLIGENT LATCH to avoid permanent resetting of a protective, latched switch OFF caused by over current shutdown or over temperature shutdown) in PWM applications. To reset a latched protective switch OFF the fault has to be acknowledged by commanding the input LOW for a minimum duration of treset. See Figure 16 for details. VIN tRESET over temperature / short circuit VOUT t tRESET t t IIS IIS(fault) IIS(OFFSET) latch reset reset t latch INTELLIGENTLATCH.emf Figure 16 Infineon® INTELLIGENT LATCH - fault acknowledge and latch reset 5.3.4 Reverse Polarity Protection Reverse polarity condition is the mix-up of the power supply connections of the entire application. This means, application GND connector is connected to positive supply voltage, while Vs pin is connected to negative supply voltage or ground potential. See Figure 17 and Figure 45. VS -VS(rev) R INPUT logic -IIN R SENSE -IL RIS GND LOAD OUT Revers.emf Figure 17 Reverse polarity condition Datasheet Speed PROFETTM 17 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description Under reverse polarity condition, the output stage can not block a current flow. It will conduct a load current via the intrinsic body diode. The current through the output stage has to be limited either by the load itself or by external circuitry, to avoid over heating of the power stage. Power losses in the power stage during reverse polarity condition can be calculated by Equation (3): P rev = ( – I L ( rev ) ) × ( – V SD ( rev ) ) (3) Additionally, the current into the logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistors. Figure 46 shows a typical application. Resistors RINPUT and RSENSE are used to limit the current in the logic of the device and in the ESD protection stage. The recommended value for RINPUT = RSENSE = 10kΩ. As long as |-VS(rev)| < 16V, the current through the GND pin of the device is blocked by an internal diode. 5.3.5 Protection during Loss of Ground In case of loss of the module ground or device ground connection (GND pin) the device protects itself by automatically turning OFF (when it was previously ON) or remains OFF (even if the load remains connected to ground), regardless if the input is driven HIGH or LOW. In case GND recovers the device may need a reset via the IN pin to return to normal operation. 5.3.6 Protection during Loss of Load or Loss of VS Condition In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is recommended to use a Z-diode, a varistor (VZa < 40V) or VS clamping power switches with connected loads in parallel. In case of loss of a charged inductive load, disturbances on pin OUT may require a reset on IN pin for the device to regain normal operation. In case of loss of VS connection with charged inductive loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor (VZb < 16V, VZL + VD < 16V). For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please see Figure 18 and Figure 19 for details. VS GND OUT LOAD logic LOAD logic GND OUT Smart Clamping VZa Smart Clamping VZb VS VD VZL LossOfVs.emf Figure 18 Loss of VS Datasheet Speed PROFETTM 18 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description VS logic OUT LOAD VZa Smart Clamping VZb GND LossOfLoad.emf Figure 19 Loss of load 5.3.7 Protection during ESD or Over Voltage Condition All logic pins have ESD protection. A dedicated clamp mechanism protects the logic IC against transient over voltages. See Figure 20 for details. VS ESD protection IS V Z(IC) OUT Over voltage protection IN GND Figure 20 OverVoltageProtection.emf Over voltage protection In the case (VS > max VS(SC))&(VS < VSD(CL)), the output transistor is still operational and follows the input. Parameters are no longer warranted and lifetime is reduced compared to normal mode. This specially impacts the short circuit robustness, as well as the maximum energy EAS the device can handle. The BTF50060-1TEA provides Infineon® SMART CLAMPING functionality, which suppresses non nominal over voltages by actively clamping the over voltage across the power stage and the load. This is achieved by controlling the clamp voltage VSD(CL) depending on the junction temperature Tj and the load current IL. See Figure 15 for details. Please refer also to Chapter 5.1.2. Datasheet Speed PROFETTM 19 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description 5.4 Diagnosis Functions For diagnosis purpose, the BTF50060-1TEA provides an enhanced analog sense signal at the pin IS. For an overview of the diagnosis functions, you may have a look at Figure 15 “Diagram of Diagnosis & Protection block”. 5.4.1 Sense Output The current sense output is a current source driving a signal IIS proportional to the load current (see Equation (5)) as long as no “hard” failure mode occurs (short circuit to GND / over temperature) and VSIS = VS - VIS > 3V. It is activated and deactivated by the input signal. Usually, in the application a pull-down resistor RIS is connected between the current sense pin IS and GND pin. A typical value is RIS = 1.0 kΩ. Figure 46 shows a simplified application setup. Table 5 is giving a quick reference for the logic / analog state of the IS pin during device operation. In case a short circuit or an over temperature condition is detected, the sense output is supplying a fault signal IIS(fault). The fault signal is reset by an input signal being LOW for t > tRESET. As long as an open load, short-to-VS or inverse operation is detected while the device is in OFF state, the sense output also supplies the fault signal IIS(fault). The timings and logic of the IS pin are described in Figure 21. During output turning ON or OFF, the sense signal is invalid. Please note: if the devices logic is inactive, e.g. because the IN signal was LOW for t > tRESET, the logic of the device needs a wake-up time of twake for activating the sense output in addition to the current sense settling time for turn ON tsIS(ON). See also Figure 11. Table 5 Truth Table for Sense Signal Operation mode Normal operation Inverse operation Input level Output level Sense output LOW for t > tRESET VOUT = VS - RDS(ON) * IL VOUT ~ GND (VOUT < VOUT(OLL)) HIGH VOUT > VS IIS = (IL / kIS) + IIS(OFFSET) IIS = IIS(OFFSET) Z3) (IIS = IIS(LL)) IIS ≤ IIS(OFFSET) IIS = IIS(OFFSET) IIS = IIS(FAULT) IIS = IIS(FAULT) HIGH 1) LOW 2) for t < tRESET LOW for t < tRESET LOW for t > tRESET After short circuit to GND or HIGH or over temperature detection LOW for t < tRESET VOUT ~ GND LOW for t > tRESET Short circuit to VS HIGH Z (IIS = IIS(LL)) VOUT = VS LOW for t < tRESET LOW for t > tRESET Open load HIGH LOW for t < tRESET VOUT = VS VOUT > VOUT(OLH)4) LOW for t > tRESET 1) 2) 3) 4) IIS ≤ IIS(OFFSET) IIS = IIS(OFFSET) IIS = IIS(FAULT) IIS ≤ IIS(OFFSET) IIS = IIS(OFFSET) IIS = IIS(FAULT) HIGH: VIN = VIN(H) LOW: VIN = VIN(L) Z: High impedance Can be achieved e.g. with external pull up resistor ROL, see Figure 46. Datasheet Speed PROFETTM 20 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description VIN t tRESET IL tsIS(ON) IIS tsIS (OFF) t 90% (IIS static - IIS(OFFSET)) tsIS(LC) tsIS (LC) 10% (IIS static - IIS(OFFSET)) IIS (OFFSET) t Figure 21 CurrentSenseTiming .emf Sense output timing Figure 22 shows the current sense as a function of the load current in the power DMOS. The curves represent the minimum and maximum values for the sense current, as well as the ideal sense current, assuming an ideal kIS factor value as well as an ideal IIS(OFFSET). 10 max I IS(fault) 8 typ I IS(fault) ! ./ #$ #$ I IS [mA] min I IS(fault) 6 max I IS typ I IS 4 - #$ min I IS #$ max I L(SC) 2 ./ #$%&''$*+, ! typ I L(SC) - #$%&''$*+, min I L(SC) 0 #$%&''$*+, 0 Figure 22 20 40 60 I L [A] 80 100 ! ! " Sense current as a function of the load current (VSIS > 3V) The sense current can be calculated out of the load current by the following Equation (4): I IS = --1- × IL + I IS ( OFFSET ) k IS (4) Or, vice versa, the load current can be calculated out of the sense current by following Equation (5): IL = k IS × ( IIS – IIS ( OFFSET ) ) Datasheet Speed PROFETTM 21 (5) Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description For definition of kIS, the following Equation (6) is used: IL1 –I L2 k IS = -------------------------------------------IIS ( I L1 ) –I IS ( IL2 ) (6) IL1 and IL2 are two different load currents, IIS(IL1) and IIS(IL2) are the corresponding sense currents. 5.4.2 Enhancing Accuracy of the Sense Output by End of Line Calibration For some applications it may be necessary to measure the load current with very high accuracy. To increase the device accuracy, different methods can be used, e.g. single point calibration or dual point calibration. The variance of the sense current at a certain load current depends on the variance of the factor kIS as well as on the variance of the offset current IIS(OFFSET). The temperature variance of the factor kIS over the temperature range is described with the parameter ΔkIS,Temp. Δk IS ( Temp ) = max [ k IS ( – 40°C ) – k IS ( 25°C ) ; k IS ( 150°C ) – k IS ( 25°C ) ] (7) The variance of the sense current offset over the temperature range is defined as shown in Equation (8): Δ I IS ( OFFSET ) = max [ 5.4.3 IIS ( OFFSET ) ( –40°C ) – I IS ( OFFSET ) ( 25°C ) ; I IS ( OFFSET ) ( 150°C ) – IIS ( OFFSET ) ( 25°C ) ] (8) Short-to-Battery detection / Open Load Detection in OFF state The BTF50060-1TEA provides open load diagnosis in OFF state. This is achieved by monitoring the OUT voltage. The open load at OFF diagnosis is activated if VIN = LOW for t > tRESET. An open load or short-to-battery is detected if VOUT > VOUT(OLH). To provoke this condition during Open Load, it may be necessary to use an external pull up resistor ROL (see Figure 46). In case of detecting a shorted load to battery, open load, or inverse operation in OFF state, the pin IS provides a defined fault current IIS(fault). If VOUT drops below VOUT(OLL), or VIN is set to HIGH, the fault signal is removed. Figure 23 shows the behavior of the open load at OFF diagnosis. Figure 43 and Figure 44 provide the typical behavior of VOUT(OLH) and VOUT(OLL) as a function of the supply voltage and junction temperature. The device internally connects OUT with GND pin with an effective resistor ROUT(GND). In case the application provides high leakage current outside of the BTF50060-1TEA between Vs and OUT, it may be necessary to use an external resistor RL_OL to disable open load detection. Figure 46 gives an example of external circuitry for enabling / disabling open load detection in OFF state. Datasheet Speed PROFETTM 22 Rev. 1.2, 2011-09-01 BTF50060-1TEA Functional Description VOUT VOUT(OLH) VOUT(OLL) ΔVOUT(OL) t IIS IIS(FAULT) IIS(LL) t OpenLoad_at_OFF.emf Figure 23 Open load detection in OFF state 5.5 Undervoltage Shutdown & Restart The BTF50060-1TEA switches OFF whenever VS drops below VS(UV)OFF. The device restarts automatically after the supply voltage increases to a sufficient level (VS > VS(UV)ON) and a delay time of tdelay(UV), if the input pin IN is HIGH. Please see Figure 24 for details. The fault signal is reset if VS is below VS(UV) for more than typ. 70µs. VIN HIGH t VS VS(UV)ON VS(UV)OFF ΔV S(UV) t VOUT ON tdelay(UV) Z t Undervoltage.emf Figure 24 Undervoltage shutdown and restart Datasheet Speed PROFETTM 23 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA 6 Electrical Characteristics BTF50060-1TEA 6.1 Electrical Characteristics Table Table 6 Electrical Characteristics: BTF50060-1TEA VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Number VIN = LOW for t > tRESET, VS = 13.5V, Tj = 25°C VOUT < VOUT(OLL) VIN = LOW for t > tRESET, VS = 13.5V, Tj = 85°C VOUT < VOUT(OLL) VIN = LOW for t > tRESET, VS = 13.5V, Tj = 150°C VOUT < VOUT(OLL) VIN = HIGH, t > tON VIN = LOW for t > tRESET, VOUT > VOUT(OLH) P_6.1 VIN = HIGH, Tj = 25 °C, VS = 13.5V, IL = +/-13.5A VIN = HIGH, Tj = 150 °C, VS = 13.5V, IL = +/-13.5A VIN = HIGH, Tj = 25 °C, VS = 8V, IL = +/-13.5A VIN = HIGH, Tj = 150 °C, VS = 8V, IL = +/-13.5A P_6.6 Operating currents Standby current for whole device with load Tj = 25°C IS(OFF)_251) – 5 8 µA Standby current for whole device with load Tj = 85°C IS(OFF)_851) – 5 8 µA Standby current for whole device with load Tj = 150°C IS(OFF)_150 – 20 60 µA Ground current during ON IGND(ON) – 3 5 mA Supply current during open load detection in OFF state IS(OL)1) – 12 15 mA On-State Resistance RDS(ON)_251) – 6.8 – mΩ On-State Resistance RDS(ON)_150 – 10 12 mΩ On-State Resistance RDS(8V)_251) – 8 – mΩ On-State Resistance RDS(8V)_1501) – 11.5 15 mΩ P_6.2 P_6.3 P_6.4 P_6.5 Power stage Datasheet Speed PROFETTM 24 P_6.7 P_6.8 P_6.9 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA Table 6 Electrical Characteristics: BTF50060-1TEA (cont’d) VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values 1) Unit Note / Test Condition Number VIN = HIGH, Tj = 25 °C, VS = 4.7V, IL = +/-13.5A VIN = HIGH, Tj = 150°C, VS = 4.7V, IL = +/-13.5A VIN = 0V, IL = -13.5A P_6.10 Min. Typ. Max. – 10.5 – mΩ On-State Resistance at low supply voltage RDS(UV)_25 On-State Resistance at low supply voltage RDS(UV)_150 – 19 25 mΩ Body diode forward voltage drop2) -VSD(rev)1) 300 700 1000 mV P_6.11 P_6.12 (see Figure 13 and Figure 17) Output leakage current3) IL(OFF)_251) – 0.1 1 µA Output leakage current IL(OFF)_851) – 0.1 1 µA Output leakage current IL(OFF)_150 – 1 60 µA (dV/dt)ON1) (dV/dt)OFF1) ΔdV/dt1) 22 43 108 V/µs -90 -31 -13 V/µs -5 12 30 V/µs – 0.35 1.0 µs P_6.17 (see Figure 10 P_6.18 and Figure 11 for definitions) P_6.19 Tj = 25°C, VIN = LOW, VOUT = 0V Tj = 85°C, VIN = LOW, VOUT = 0V Tj = 150°C, VIN = LOW, VOUT = 0V P_6.13 RL = 1Ω, VS = 13.5V P_6.16 P_6.14 P_6.15 Switching a resistive load Slew rate 30% to 70% VS Slew rate 70% to 30% VS Slew rate matching (dV/dt)ON - |(dV/dt)OFF| Turn ON time to 90% VS Turn OFF time to 10% VS Turn ON/OFF matching Wake up delay time Turn ON rise time 10% to 90% VS Turn OFF fall time 90% to 10% VS tON tOFF tON-tOFF twake1) tr – 0.85 1.5 µs P_6.20 -1.15 -0.5 -0.25 µs P_6.21 – 2 – µs P_6.62 0.1 0.25 0.49 µs P_6.22 tf 0.12 0.35 0.83 µs P_6.23 Switching an inductive load Source to Drain Smart Clamping voltage4) VSD(CL)_251) 32 40 – V Source to Drain Smart Clamping voltage VSD(CL)_1501) 40 48 – V -0.3 – 0.8 V Tj = 25°C, IL = 40mA, Tj = 150°C, IL = 13.5A, P_6.26 – P_6.28 P_6.27 Input circuitry LOW level input voltage Datasheet Speed PROFETTM VIN(L) 25 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA Table 6 Electrical Characteristics: BTF50060-1TEA (cont’d) VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. VIN(H) ΔVIN1) RIN 2.0 – 6 V – P_6.29 – 200 – mV – P_6.30 50 100 200 kΩ – P_6.31 Short circuit shutdown threshold IL(SC) 60 75 95 A 8V < VS < 19V P_6.32 Short circuit shutdown threshold at low supply voltage IL(SC)LV1) 10 – IL(SC) A 4.7V < VS < 8V P_6.33 Thermal shutdown temperature Tjt 150 1751) 2001) °C – P_6.34 Latch reset time tRESET1) 40 55 80 ms P_6.35 0 0.5 1.0 mA VIN = LOW 6V < VS < 28V VS = VS(EXT), HIGH level input voltage Input voltage hysteresis Input pull down resistor Protection Output leakage current while IOUT(GND)1) GND disconnected5) Over voltage protection of logic IC VZ(IC) P_6.40 GND pin disconnected 45 50 – V 10.5 13 15 k IGND = 5mA P_6.41 Sense Output Sense current steepness (reciprocal) kIS kIS temperature variance ΔkIS(Temp)1) Sense current IL = IL1 Sense current offset Sense current offset temperature variance see Equation (6) P_6.42 -2 0 +2 IIS(L1) 0.95 1.28 1.88 IIS(OFFSET) ΔIIS(OFFSET) 50 240 600 µA IL1 = 13.5A, IL2 = 0A, VS - VIS > 3V IL = 13.5A, VS - VIS > 3V VS - VIS > 3V -100 0 100 µA see Equation (8) P_6.47 % mA P_6.43 P_6.44 P_6.46 1) Leakage Current at sense output IIS(LL) 0 0.1 1 µA VIN = LOW for t > tRESET, VOUT < VOUT(OLL) P_6.48 Fault signal current at sense output IIS(fault) 6.5 7.5 9 mA 6) P_6.49 Current sense settling time for turn ON to 90% IIS tsIS(ON)1) 0 1 3 µs Current sense settling time for turn OFF to 10% IIS tsIS(OFF)1) 0 1 3 µs Current sense settling time matching tsIS(ON)tsIS(OFF)1) -0.5 0 0.5 µs Datasheet Speed PROFETTM 26 VS - VIS > 3V VS = 13.5V, RL = 1.0Ω, RIS = 1.0kΩ, CSENSE < 100pF, See Figure 21 P_6.50 P_6.51 P_6.52 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA Table 6 Electrical Characteristics: BTF50060-1TEA (cont’d) VS = 6V to 19V, Tj = -40°C to 150°C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Current sense settling time after changes of the load current IL Symbol tsIS(LC) Values 1) Min. Typ. Max. 0 1 2 Unit Note / Test Condition Number µs VIN = HIGH, IL = 1A ↔ 50A RIS = 1.0kΩ, CSENSE < 100pF, P_6.53 See Figure 21 Turn ON current sense tsIS(FAULT) settling time to IIS(fault) in case of short circuit 1) 0 1 3 µs RIS = 1.0kΩ, CSENSE < 100pF, P_6.54 See Figure 16 Open load at OFF Output voltage threshold for open load detection in OFF state VOUT(OLH) P_6.55 see Figure 23, Figure 43 and Figure 44 P_6.56 5.5 6 4.5 5 5.5 Output voltage hysteresis for ΔVOUT(OL)1) open load detection in OFF state – 500 – mV ROUT(GND)1) – 450 – kΩ VOUT = 4.5V, VIN = LOW, for t > tRESET P_6.63 – 4.4 4.7 V VS increasing, VIN = HIGH VS decreasing, VIN = HIGH VS(UV)ON VS(UV)OFF, VIN = HIGH VIN = HIGH P_6.58 Output voltage threshold for VOUT(OLL) resetting open load detection in OFF state Intrinsic output pull-down resistance V VIN = LOW, t > tRESET, VS = 13.5V, 5 P_6.57 Undervoltage shutdown and restart Undervoltage turn ON voltage VS(UV)ON Undervoltage turn OFF voltage VS(UV)OFF – 4.1 4.4 V Undervoltage turn ON/OFF hysteresis ΔVS(UV)1) – 0.25 – V Undervoltage restart delay time tdelay(UV) 4 6 8 ms 1) 2) 3) 4) 5) 6) P_6.59 P_6.60 P_6.61 Not subject to production test, specified by design Please note - during ON state, the output voltage drop in inverse current operation is defined by VSD = RDS(ON) x IL See Figure 28 for typical temperature dependency. See Figure 33 for typical temperature dependency. All pins disconnected except for VS and OUT Valid after over temperature or short ciruit to ground until reset (t > tRESET, VIN = LOW, or undervoltage detection) or during detection of open load in OFF state. Datasheet Speed PROFETTM 27 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA Parameter dependencies 6.2.1 Power Stage ! ! @ $%&B,& $%&'',; 6.2 ! ? 3! ! ! 79: <!< <>< Typical standby current IS(OFF) as a Figure 26 function of the junction temperature Tj VS = 13.5V, VIN = LOW for t > tRESET 12 10 8 @ "%&'',; R DS(ON) [mOhm] Figure 25 3! 6 ! Typical ON state resistance RDS(ON) as a function of the junction temperature Tj VS = 13.5V, IL = 13.5A, VIN = HIGH 4 ? 2 0 ! 79: 0 Figure 27 5 10 15 20 V S [V] 25 30 3! Typical ON state resistance RDS(ON) as a Figure 28 function of the supply voltage VS Tj = 25°C, IL = 13.5A, VIN = HIGH Datasheet Speed PROFETTM 28 ! 79: ! Typ. output leakage current IL(OFF) as a function of the junction temperature Tj VS = 13.5V, VIN = LOW Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA ! <; $%G,< @ ? ? 3! 3! ! 79: H<HK&B Typical body diode forward voltage drop -VSD(rev) as a function of the junction temperature Tj IL = -4A, VIN = LOW Figure 30 ! @ ? K&B Figure 31 ! 79: K&'' Typical turn ON time tON and and turn OFF time tOFF as a function of the junction temperature Tj RL = 1Ω, VS = 13.5V, Datasheet Speed PROFETTM 3! ! ! 3H<HK&'' Typical slew rate for turn ON (dV/dt)ON and turn OFF -(dV/dt)OFF as a function of the junction temperature Tj RL = 1Ω, VS = 13.5V, 30% <=> 70% VS ! 79: Figure 32 29 ? 3! ! 79: ! ; Figure 29 ! Typical turn ON rise time tr and and turn OFF fall time tf as a function of the junction temperature Tj RL = 1Ω, VS = 13.5V, 10% <=> 90% VS Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA ! $%:",< ? 3! Figure 33 6.2.2 ! 79: ! Source to Drain Smart Clamping voltage VSD(CL) as a function of the junction temperature Tj IL = 40mA, VIN = LOW Input Circuit ? #BM& @ ? 3! Figure 34 ! 79: ! Typ. input pull down resistor RIN as a function of the junction temperature Tj Datasheet Speed PROFETTM 30 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA Protection Functions @ @ "%$:, "%$:, 6.2.3 ? ? $%P<,&'' 3! Figure 35 ! ! $< ! ! 79: <!< Typical short circuit shutdown threshold as a function of the supply voltage VS; Tj = 25°C Figure 36 ! <!< Typical short circuit shutdown threshold as a function of the junction temperature Tj; VS = 13.5V 120 100 I peak,SC [A] 80 60 40 20 0 0.1 Figure 37 1 10 dI L/dt [A/μs] 100 Typical short circuit overshooting as a function of the dISC/dt (device is in ON state when short circuit appears) Tj = 25°C Datasheet Speed PROFETTM 31 Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA Diagnosis Functions 16000 14000 ? 12000 10000 #$ k IS 6.2.4 8000 @ 6000 4000 ? 2000 0 -50 Figure 38 0 50 T j [°C] 100 150 Typical sense current slope kIS as a Figure 39 function of the junction temperature Tj VS = 13.5V, IL1=13.5A, IL2=0A, VIN=HIGH $< Typical sense current slope kIS as a function of the supply voltage VS Tj = 25°C, IL1=13.5A, IL2=0A, VIN=HIGH 300 ? 250 I IS(OFFSET) [μA] #$ @ 200 150 100 ? 50 0 Figure 40 " ? -50 Typical sense current slope kIS as a Figure 41 function of the load current IL1 VS = 13.5V, Tj = 25°C, IL2=0A, VIN = HIGH Datasheet Speed PROFETTM 32 0 50 T j [°C] 100 150 Typical sense current offset IIS(OFFSET) as a function of the junction temperature Tj VS = 13.5V, VIN = HIGH Rev. 1.2, 2011-09-01 BTF50060-1TEA Electrical Characteristics BTF50060-1TEA @ #$ #$%&''$*+,; ! ! ? ! Figure 42 ! ! $< ! Typical sense current offset IIS(OFFSET) as a function of the supply voltage VS Tj = 25°C, VIN = HIGH ? $#$< @ Typical fault current IIS(fault) at the sense output as a function of the voltage VSIS = VS - VIS VS = 13.5V, VIN = HIGH 10 10 8 8 V OUT(OLL), V OUT(OLH) [V] V OUT(OLL), V OUT(OLH) [V] 6 4 2 6 4 2 0 0 0 10 Vout(OLH) Figure 43 V S [V] 20 30 -50 Vout(OLL) Vout(OLH) Typcical output voltage thresholds for Figure 44 open load detection during OFF VOUT(OLH) and VOUT(OLL) as a function of the supply voltage VS Tj = 25°C Datasheet Speed PROFETTM 0 33 50 T j [V] 100 150 Vout(OLL) Typical output voltage thresholds for open load detection during OFF VOUT(OLH) and VOUT(OLL) as a function of the junction temperature Tj VS = 13.5V Rev. 1.2, 2011-09-01 BTF50060-1TEA Application Information 7 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. V bat +5V C VS R INPUT µC e.g. XC866 470µF 10k R SENSE 10 k VS IN OUT IS D1 GND R IS 1k Load GND Figure 45 appl_example_L.emf Application Diagram for switching an inductive load without external circuitry supporting open load detection in OFF state Vbat T1 +5V C VS 470 µF R INPUT µC e .g. XC866 10k VS IN 10k R SENSE R OL 3k3 OU T IS GND R IS 1k D1 R L_OL 33k GND Figure 46 Load appl_ example_OL.emf Application Diagram with external circuitry supporting open load detection in OFF state Note: This are very simplified examples of an application circuit. The function must be verified in the real application. Table 7 Typical Application Parameter1) Parameter Symbol Typical Values Note / Condition Range of typical PWM frequencies fPWM 0 Hz ... 33 kHz duty cycle = 0%, 10% ... 90% Nominal Load Current IL(NOM) 16.5 A Typical load current at 10 kHz IL(10kHz) 11 A Typical load current at 25 kHz IL(25kHz) 7A TA = 85°C, Tj < 150°C, RthJA = 22K/W DC operation or fPWM < 1kHz; VS = 19V TA = 85°C, Tj < 150°C, RthJA = 22K/W fPWM = 10kHz, duty cycle = 95%, VS = 19V TA = 85°C, Tj < 150°C, RthJA = 22K/W fPWM = 25kHz, duty cycle = 95%, VS = 19V, 1) Values are calculated and not subject to production test. Datasheet Speed PROFETTM 34 Rev. 1.2, 2011-09-01 BTF50060-1TEA Application Information Table 8 Bill of Material Reference Value Purpose RINPUT RSENSE RIS CVS 10 kΩ Protection of the µC during overvoltage and reverse battery condition 10 kΩ Protection of the µC during overvoltage and reverse battery condition 1 kΩ Sense resistor. Shunt resistor for measuring IIS by the µC’s AD converter. 470µF Capacitor buffering the supply voltage Switching an inductive load D1 Freewheeling diode for commutation of load current. Depending on load current and thermal boundary conditions, it may be necessary to use active freewheeling by a MOSFET, instead of the diode. External circuitry supporting open load at OFF detection T1 BC807 Switches the supply voltage for activation / deactivation of Open Load at OFF detection ROL RL_OL 3.3kΩ Pull up resistor for Open Load detection in OFF state 33kΩ Pull down resistor for deactivating Open Load detection in OFF state 7.1 • • Further Application Information Please contact us for information regarding the pin FMEA For further information you may visit http://www.infineon.com/ µ Datasheet Speed PROFETTM 35 Rev. 1.2, 2011-09-01 BTF50060-1TEA Package Outlines and Parameters 8 Package Outlines and Parameters Dimensions in mm Figure 47 PG-TO252-5-11 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Table 9 Parameter Value Jedec humidity category acc. J-STD-020-D MSL3 Jedec classification temperature acc. J-STD-020-D 260°C Datasheet Speed PROFETTM 36 Rev. 1.2, 2011-09-01 BTF50060-1TEA Revision History 9 Revision History Revision Date Changes DS V1.2 2011-09-01 Package name changed from PG-TO252-5-311 to PG-TO252-5-11 P_4.17 and P_4.18 Reference updated to ANSI/ESDA/JEDEC JS-001-2010 P_6.12 Footnote 2): Replacing VSD(inv) by VSD in formula. P_6.26 VSD(CL)_25, P_6.27 VSD(CL)_150 and Figure 33 “Output voltage drop limitation” renamed to “Source to Drain Smart Clamping voltage” DS V1.1 2011-05-26 Chapter 4.1 Footnote 4) splitted. Footnote 6) added. Equation (7) and Equation (8) corrected. (150°C) P_6.3 IS(OFF)_150 condition set to VS = 13.5V P_6.16 (dV/dt)ON, P_6.17 (dV/dt)OFF and P_6.18 ΔdV/dt not subject to production test; all values changed. Figure 30, Figure 31 and Figure 32 added. P_6.46 IIS(OFFSET) , P_6.44 IIS(L1) typical value and maximum limit changed. Figure 41 and Figure 42 adapted. Figure 40 “Typical leakage current IIS(LL) at the sense output as a function of the junction temperature Tj” and Figure 41 “Typical leakage current IIS(LL) at the sense output as a function of the supply voltage VS” removed. DS V1.0 2010-06-24 Initial datasheet version. Datasheet Speed PROFETTM 37 Rev. 1.2, 2011-09-01 Edition 2011-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 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