DST3946DPJ 40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR IN SOT963 Features Mechanical Data BVCEO > 40V Case: SOT963 IC = 200mA Collector Current Case Material: Molded Plastic “Green” Molding Compound; SOT963 Ultra Small Package of 1mm2 Footprint Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ideally Suited for Automated Assembly Processes Terminals: Finish Matte Tin Plated Leads; Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability UL Flammability Classification Rating 94V-0 Solderable per MIL-STD-202, Method 208 e3 Weight: 0.0027 grams (Approximate) SOT963 6 5 Q2 Q1 1 4 2 3 Top View Device Schematic and Pin-Out Top View Ordering Information (Note 4) Product DST3946DPJ-7 DST3946DPJ-7B Notes: Marking T7 T7 Reel Size (inches) 7 7 Tape Width (mm) 8 8 Quantity per Reel 10,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/ quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information T7 DST3946DPJ Document number: DS32044 Rev. 3 - 2 T7 = Product Type Marking Code 1 of 9 www.diodes.com March 2016 © Diodes Incorporated DST3946DPJ Absolute Maximum Ratings - NPN (Q1) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Value 60 40 6.0 200 Unit V V V mA Absolute Maximum Ratings - PNP (Q2) (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -200 Unit V V V mA Symbol PD RJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Note: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. ESD Rating (Note 6) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Note: Symbol ESD HBM ESD MM Value 4,000 200 Unit V V JEDEC Class 3A B 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DST3946DPJ Document number: DS32044 Rev. 3 - 2 2 of 9 www.diodes.com March 2016 © Diodes Incorporated DST3946DPJ Thermal Characteristics and Derating Information r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 RJA(t) = r(t) * RJA °C RJA = 370°C/W D = 0.9 D = 0.05 P(pk) D = 0.02 0.01 t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t 1/t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 100 1,000 0.4 1,000 Single Pulse PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) 10 RJA(t) = r(t) * RJA °C RJA = 370°C/W 100 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 10 1 0.1 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST3946DPJ Document number: DS32044 Rev. 3 - 2 3 of 9 www.diodes.com 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Dissipation vs. Ambient Temperature March 2016 © Diodes Incorporated DST3946DPJ Electrical Characteristics - NPN (Q1) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 7) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL 60 40 6.0 50 50 V V V nA nA hFE 40 70 100 60 30 300 Collector-Emitter Saturation Voltage VCE(SAT) 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 0.85 0.95 V COBO CIBO hIE 1.0 4.0 8.5 10 pF pF kΩ Voltage Feedback Ratio hRE 0.5 8.0 x 10-4 Small Signal Current Gain Output Admittance hFE hOE 100 1.0 400 40 µs Current Gain-Bandwidth Product fT 300 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time tD tR tS tF 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Note: Test Condition IC = 10µA, IE = 0 IC = 1.0mA, IB = 0 IE = 10µA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(OFF) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = -IB2 = 1.0mA 7. Short duration pulse test used to minimize self-heating effect. 0.14 400 IB = 2mA IB = 1.6mA IB = 1.8mA VCE = 5V °C TA = 150°C IB = 1.4mA IB = 1.2mA 0.10 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.12 IB = 1mA 0.08 IB = 0.8mA IB = 0.6mA 0.06 IB = 0.4mA 0.04 300 °C T A = 125°C °C TA = 85°C 200 100 °C TA = 25°C °C TA = -55°C IB = 0.2mA 0.02 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DST3946DPJ Document number: DS32044 Rev. 3 - 2 4 of 9 www.diodes.com 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current March 2016 © Diodes Incorporated DST3946DPJ 1 1 IC/IB = 20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 °C T A = 150°C 0.1 °C TA = 125°C °C TA = 85°C °C T A = 25°C °C TA = -55°C 0.1 °C TA = 85°C °C TA = -55°C 0.01 0.1 0.01 0.1 1.1 1.2 VCE = 5V 0.9 °C TA = -55°C 0.8 0.7 °C TA = 25°C 0.6 TA = 150°C °C 0.5 °C TA = 125°C 0.4 0.3 0.1 °C TA = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 °C TA = 25°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) °C TA = 150°C °C TA = 125°C Gain = 10 1.0 0.8 0.6 °C TA = -55°C °C TA = 25°C °C TA = 150°C 0.4 0.2 0.1 °C TA = 125°C °C T A = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 IC, COLLECTOR CURRENT (A) °C Single, TA = 25°C Non-Repetitive Pulse 1 PW = 1ms DC 0.1 s PW = 100µs PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER CURRENT (V) Fig. 10 Safe Operation Area (NPN) DST3946DPJ Document number: DS32044 Rev. 3 - 2 5 of 9 www.diodes.com March 2016 © Diodes Incorporated DST3946DPJ Electrical Characteristics - PNP (Q2) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX ICBO IBL -40 -40 -5.0 -50 -50 -50 V V V nA nA nA hFE 60 80 100 60 30 300 Collector-Emitter Saturation Voltage VCE(SAT) -0.25 -0.40 V Base-Emitter Saturation Voltage VBE(SAT) -0.65 -0.85 -0.95 V COBO CIBO hIE hRE hFE hOE 2.0 0.1 100 3.0 4.5 10 12 10 400 60 pF pF kΩ x 10-4 s Current Gain-Bandwidth Product fT 300 MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time tD tR tS tF 35 35 225 75 ns ns ns ns Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 8) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Note: Test Condition IC = -10µA, IE = 0 IC = -1.0mA, IB = 0 IE = -10µA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, IE = 0 VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(OFF) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = -IB2 = -1.0mA 8. Short duration pulse test used to minimize self-heating effect. 0.20 400 IB = -2mA 0.16 IB = -1.8mA VCE = 5V 350 °C TA = 150°C IB = -1.4mA hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA IB = -1.2mA 0.12 IB = -1mA IB = -0.8mA 0.08 IB = -0.6mA IB = -0.4mA 300 °C TA = 125°C 250 °C TA = 85°C 200 TA = 25°C °C 150 100 °C TA = -55°C 0.04 IB = -0.2mA 0 0 50 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 11 Typical Collector Current vs. Collector-Emitter Voltage DST3946DPJ Document number: DS32044 Rev. 3 - 2 6 of 9 www.diodes.com 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 12 Typical DC Current Gain vs. Collector Current March 2016 © Diodes Incorporated DST3946DPJ 1 1 IC/IB = 20 -V CE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 °C TA = 150°C 0.1 °C TA = 125°C °C TA = 85°C TA = 25°C °C °C TA = -55°C 0.01 1.0 0.8 °C TA = -55°C °C TA = 25°C 0.6 °C TA = 150°C °C TA = 125°C 0.4 TA = 85°C °C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Saturation Voltage vs. Collector Current -IC, COLLECTOR CURRENT (A) 10 °C TA = 85°C °C TA = 25°C °C TA = -55°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage vs. Collector Current Gain = 10 °C TA = 125°C 0.01 0.1 1 1.2 °C TA = 150°C 0.1 1.2 Gain = 10 1.0 0.8 °C TA = -55°C °C T A = 25°C 0.6 °C TA = 150°C °C TA = 125°C 0.4 °C TA = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 16 Typical Base-Emitter Saturation Voltage vs. Collector Current °C Single, TA = 25°C Non-Repetitive Pulse 1 PW = 1ms DC 0.1 PW = 100µs s PW = 100ms PW = 10ms 0.01 0.001 0.1 1 10 100 -VCE, COLLECTOR EMITTER CURRENT (V) Fig. 17 Safe Operation Area (PNP) DST3946DPJ Document number: DS32044 Rev. 3 - 2 7 of 9 www.diodes.com March 2016 © Diodes Incorporated DST3946DPJ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT963 D L1 e1 E1 E c e b A1 SOT963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0.00 0.05 -b 0.10 0.20 0.15 c 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 e --0.35 e1 --0.70 L1 0.05 0.15 0.10 All Dimensions in mm A Seating plane Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT963 C Dimensions C X Y Y1 Y1 Value (in mm) 0.350 0.200 0.200 1.100 Y X DST3946DPJ Document number: DS32044 Rev. 3 - 2 8 of 9 www.diodes.com March 2016 © Diodes Incorporated DST3946DPJ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DST3946DPJ Document number: DS32044 Rev. 3 - 2 9 of 9 www.diodes.com March 2016 © Diodes Incorporated