DMC2990UDJ-7 - Diodes Incorporated

DMC2990UDJ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
Device
Q1
Q2
V(BR)DSS
20V
-20V
Features and Benefits
RDS(ON) max
ID max
TA = +25°C

Low On-Resistance

Very low Gate Threshold Voltage, 1.0V max
0.99Ω @ VGS = 4.5V
450mA

Low Input Capacitance
1.2Ω @ VGS = 2.5V
400mA

Fast Switching Speed
1.8Ω @ VGS = 1.8V
330mA

Ultra-Small Surface Mount Package 1mm x 1mm
2.4Ω @ VGS = 1.5V
300mA

Low Package Profile, 0.45mm Maximum Package height
1.9Ω @ VGS = -4.5V
-310mA
2.4Ω @ VGS = -2.5V
-280mA
3.4Ω @ VGS = -1.8V
-240mA
5Ω @ VGS = -1.5V
-180mA

ESD Protected Gate

Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3 & 4)

Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Description

Case: SOT963
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram
Applications


Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
General Purpose Interfacing Switch


Weight: 0.027 grams (approximate)
Power Management Functions

Analog Switch
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
SOT963
ESD PROTECTED
Top View
D1
G2
S2
S1
G1
D2
Top View
Schematic and
Transistor Diagram
Ordering Information (Note 5 & 6)
Part Number
DMC2990UDJ-7
DMC2990UDJ-7B
Notes:
Case
SOT963
SOT963
Packaging
10K/Tape & Reel
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.
6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
D1
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
D1 = Product Type Marking Code
1 of 9
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March 2013
© Diodes Incorporated
DMC2990UDJ
Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
t<5s
Continuous Drain Current (Note 7) VGS = 1.8V
Steady
State
t<5s
TA = +25°C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)
ID
Value
20
±8
450
350
ID
520
410
mA
ID
330
260
mA
ID
IS
IDM
390
310
440
800
Units
V
V
mA
mA
mA
mA
Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<5s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<5s
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)
ID
Value
-20
±8
-310
-240
ID
-360
-280
mA
ID
-240
-190
mA
ID
IS
IDM
-280
-220
-440
-800
Units
V
V
mA
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
t<5s
Operating and Storage Temperature Range
Notes:
RθJA
TJ, TSTG
Value
350
360
270
-55 to +150
Units
mW
°C/W
°C/W
°C
7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
2 of 9
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March 2013
© Diodes Incorporated
DMC2990UDJ
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@TC = +25°C
Symbol
Min
Typ
Max
Unit
BVDSS
20
-
-
100
50
±100
V
|Yfs|
VSD
0.4
180
-
0.60
0.75
0.90
1.2
2.0
850
0.6
1.0
0.99
1.2
1.8
2.4
1.0
mS
V
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
27.6
4.0
2.8
113
0.5
0.07
0.07
4.0
3.3
19.0
6.4
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
IDSS
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
IGSS
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
nA
nA
V
Ω
Test Condition
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VDS = 5V, VGS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VDS = 5V, ID = 125mA
VGS = 0V, IS = 10mA
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 15V, VGS = 4.5V,
RL = 47Ω, RG = 2Ω,
ID = 200mA
Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@TC = +25°C
Symbol
Min
Typ
Max
Unit
BVDSS
-20
-
-
100
50
±100
V
|Yfs|
VSD
-0.4
100
-
1.2
1.5
2.1
2.5
4.0
450
-0.6
-1.0
1.9
2.4
3.4
5
-1.0
mS
V
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
28.7
4.2
2.9
399
0.4
0.08
0.06
5.8
5.7
31.1
16.4
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
IDSS
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
IGSS
nA
nA
V
Ω
Test Condition
VGS = 0V, ID = -250μA
VDS = -16V, VGS = 0V
VDS = -5V, VGS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -50mA
VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA
VGS = -1.2V, ID = -1mA
VDS = -5V, ID = -125mA
VGS = 0V, IS = -10mA
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS =- 10V,
ID = -250mA
VDD = -15V, VGS = -4.5V,
RG = 2Ω, ID = -200mA
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
3 of 9
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March 2013
© Diodes Incorporated
DMC2990UDJ
Q1 N-CHANNEL
0.8
0.8
VGS = 4.5V
TA = -55°C
T A = 85°C
TA = 25°C
ID, DRAIN CURRENT(A)
ID , DRAIN CURRENT (A)
VGS = 2.5V
VGS = 2.0V
0.4
VGS = 1.5V
0.2
0.6
TA = 125°C
TA = 150°C
0.4
0.2
VGS = 1.2V
0
0.5
1
1.5
2
2.5
3
3.5
VDS, DRAIN-SOURCE VOLTAGE (A)
Fig. 1 Typical Output Characteristics
VDS = 5.0V
4
1.2
1.0
VGS = 1.8V
0.8
0.6
VGS = 2.5V
VGS = 4.5V
0.4
0.2
0
0.2
0.4
0.6
0.8
ID, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
ID = 300mA
1.4
1.2
ID = 150mA
1.0
0.8
1.0
Document number: DS35481 Rev. 9 - 2
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
VGS = 4.5V
T A = 150°C
0.8
T A = 125°C
0.6
TA = 85°C
TA = 25°C
0.4
T A = -55°C
0.2
0
0.4
0.6
0.8
1.0
ID DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 5 On-Resistance Variation with Temperature
DMC2990UDJ
0
1.2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.6
-50
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
VGS = 3.0V
0.6
0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
VGS =4.0V
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0
0.2
1.2
1.0
0.8
ID = 150mA
0.6
ID = 300mA
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 6 On-Resistance Variation with Temperature
March 2013
© Diodes Incorporated
DMC2990UDJ
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.0
1.0
ID = 1mA
0.8
ID = 250µA
0.6
0.4
0.8
0.6
TA= 25°C
0.4
0.2
0.2
0
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
1,000
50
40
IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
30
Ciss
20
10
Coss
0
T A = 150°C
100
TA = 125°C
TA = 25°C
Crss
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
TA = 85°C
10
1
20
6
8
10
12 14 16 18
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
2
1
8
4
RDS(on)
Limited
DC
6
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
1.2
4
2
0.1
0
0.2
0.4
0.6
0.8
QG - (nC)
Fig. 11 Gate Charge Characteristics
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
PW = 1s
PW = 100ms
PW = 10ms
PW = 10µs
PW = 1ms
0.01
TJ(MAX) = 150°C
TA = 25°C
Single Pulse
VDS = 10V
0
PW = 100µs
PW = 10s
1
0.001
0.1
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1
10
VDS, DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
100
March 2013
© Diodes Incorporated
DMC2990UDJ
Q2 P-CHANNEL
0.8
0.8
0.6
0.6
VDS = -5.0V
TA= 85°C
TA= 150°C
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
-ID, DRAIN CURRENT(A)
0.2
0
0.5
1
1.5
2
2.5
3
3.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
3.2
2.8
VGS = -1.8V
2.4
2.0
1.6
1.2
VGS = -4.5V
0.8
0.4
0
0
0.2
0.4
0.6
-ID, DRAIN-SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
TA= 125°C
T A= -55°C
0.4
0.2
0
4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
-ID, DRAIN CURRENT (A)
0.4
0
0.8
1.7
0
2.0
0.5
1
1.5
2
2.5
3
3.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristics
VGS = -4.5V
4
T A= 150°C
TA= 125°C
1.6
T A= 85°C
1.2
T A= 25°C
0.8
T A= -55°C
0.4
0
0
0.2
0.4
0.6
-ID DRAIN CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
0.8
2.4
VGS = -2.5V,
ID = -150mA
1.5
1.3
VGS = -4.5V,
ID = -300mA
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 17 On-Resistance Variation with Temperature
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
TA= 25°C
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VGS = -2.5V,
ID = -150mA
2.0
1.6
1.2
VGS = -4.5V,
ID = -300mA
0.8
0.4
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 18 On-Resistance Variation with Temperature
March 2013
© Diodes Incorporated
DMC2990UDJ
IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.8
1.0
0.8
ID = -1mA
0.6
ID = -250µA
0.4
0.6
TA= 25°C
0.4
0.2
0.2
0
0.4
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE(C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
50
0.6
0.8
1.0
1.2
VSD, SOURCE- DRAIN VOLTAGE (V)
Fig. 20 Diodes Forward Voltage vs. Current
1,000
f = 1MHz
40
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
T A= 150°C
Ciss
30
20
10
Coss
0
TA= 125°C
100
TA= 85°C
10
TA= -25°C
Crss
0
2
4
6
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Junction Capacitance
1
10
5
0
2
4
6
8 10 12 14 16 18
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Leakage Current vs.
Drain-Source Voltage
20
10
PW = 100µs
PW = 1ms
4
ID, DRAIN CURRENT (A)
-VGS, GATE SOURCE VOLTAGE (V)
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
1.2
3
VDS = 10V, ID = -4.5A
2
1
RDS(ON)
Limited
1
PW = 10µs
PW = DC
0.1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.01
TJ(MAX) = 150C
TA = 25C
Single Pulse
0
0
2
4
6
8
10 12 14 16
QG, TOTAL GATE CHARGE (nC)
Fig. 23 Gate Charge Characteristics
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
18
0.001
0.1
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1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 24 SOA, Safe Operation Area
100
March 2013
© Diodes Incorporated
DMC2990UDJ
R(t), TRANSIENT THERMAL RESISTANCE
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA (t) = r(t)*RJA
RJA = 356C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 25 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
D
e1
L
E
E1
e
b (6 places)
c
A
SOT963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
c
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
A1
Suggested Pad Layout
C
C
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y1
Y (6X)
X (6X)
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
8 of 9
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March 2013
© Diodes Incorporated
DMC2990UDJ
NEW
PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
ADVANCE
INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
9 of 9
www.diodes.com
March 2013
© Diodes Incorporated