ds31481

DMN26D0UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
Features
V(BR)DSS
RDS(on)
20V
3.0Ω @ VGS= 4.5V
6.0Ω @ VGS= 1.8V


ID
TA = +25°C
240mA
180mA
Description
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
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications


DC-DC Converters
Power Management Functions
Dual N-Channel MOSFET
Low On-Resistance:

3.0Ω@ 4.5V

4.0Ω@ 2.5V

6.0Ω@1.8V

10Ω@1.5V
Very Low Gate Threshold Voltage, 1.05V Max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
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Case: SOT963
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (Approximate)
D1
G2
S2
S1
G1
D2
SOT963
ESD PROTECTED
Top View
Top View
Schematic and Transistor Diagram
Ordering Information (Note 4)
Part Number
DMN26D0UDJ-7
Notes:
Case
SOT963
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information (Note 5)
D1
G2
S2
M1
S1
Note:
G1
M1 = Product Type Marking Code
D2
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
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December 2014
© Diodes Incorporated
DMN26D0UDJ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 1.8V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
20
10
240
190
ID
mA
180
140
805
ID
Pulsed Drain Current - TP = 10µs
Unit
V
V
IDM
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RθJA
TJ, TSTG
Value
300
409
-55 to +150
Unit
mW
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TJ = +25°C
@TJ = +85°C (Note 8)
Symbol
Min
Typ
Max
Unit
BVDSS
20


500
1.7
nA
1
100
μA
nA
V
IDSS


V
µA
Test Condition
VGS = 0V, ID = 100μA
VDS = 20V, VGS = 0V
VDS = 2.6V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
IGSS


ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
0.8
1.8
2.5
3.4
4.7
9.5
240
0.8
1.05
3.0
4.0
6.0
10.0
|Yfs|
VSD
0.45





180
0.5

1.0
mS
V
Ciss
Coss
Crss



14.1
2.9
1.6



pF
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
td(on)
tr
td(off)
tf




3.8
7.9
13.4
15.2




ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
Gate-Body Leakage
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 8)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Ω

VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 10mA
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design, not subject to production testing.
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
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December 2014
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DMN26D0UDJ
0.8
0.4
VGS = 8V
VDS = -10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.6
VGS = 3.0V
0.5
VGS = 2.5V
0.4
0.3
VGS = 2.0V
0.2
0.1
0
0.5
1
1.5
2
2.5
V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
TA = 25°C
TA = 85°C
TA = 125°C
0.2
TA = 150°C
0.1
9
8
7
6
VGS = 1.2V
4
VGS = 1.5V
3
VGS = 1.8V
2
VGS = 2.5V
1
VGS = 4.5V
0
1
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
10
5
0
3
10
100
ID, DRAIN-SOURCE CURRENT (mA)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1,000
3
T A = 150°C
2
TA = 25°C
1
T A = -55°C
0
0.01
3.5
1.4
VGS = 2.5V
ID = 150mA
1.2
1.0
0.8
0.4
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
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0.1
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1
3.0
2.5
2.0
VGS = 2.5V
ID = 150mA
1.5
1.0
0.6
T A = 125°C
TA = 85°C
1.8
VGS = 4.5V
ID = 500mA
3
VGS = 4.5V
4.0
1.6
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
2.0
RDSON, DRAIN-SOURCE
ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
TA = -55°C
0.3
VGS = 1.5V
0
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.7
VGS = 4.5V
ID = 500mA
0.5
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
December 2014
© Diodes Incorporated
0.8
1.2
0.7
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
0.6
T A = 25°C
0.5
0.4
0.3
0.2
0.1
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
20
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
15
C, CAPACITANCE (pF)
NEW PRODUCT
DMN26D0UDJ
Ciss
10
5
Coss
1,000
TA = 150°C
TA = 125°C
100
TA = 85°C
10
TA = 25°C
1
TA = -55°C
Crss
0
0
0.1
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
0
2
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
L
E
E1
e
b (6 places)
c
A
SOT963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
c
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
A1
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
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Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
NEW PRODUCT
C
C
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y1
Y (6X)
X (6X)
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMN26D0UDJ
Document number: DS31481 Rev. 9 - 2
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December 2014
© Diodes Incorporated