DST847BPDP6 45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963 Features Mechanical Data NPN & PNP Complementary SS BVCEO > 45V IC = 100mA High Collector Current PD = 300mW Power Dissipation Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound; 1mm2 Package Footprint, 5 times smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (Approximate) UL Flammability Classification Rating 94V-0 SOT-963 6 5 Q2 Q1 1 Top View 4 2 3 Device Schematic Ordering Information (Note 4) Device DST847BPDP6-7 Notes: Compliance AEC-Q101 Marking TC Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT-963 TC DST847BPDP6 Document number: DS32036 Rev. 2 - 2 TC = Product Type Marking Code 1 of 9 www.diodes.com March 2015 © Diodes Incorporated DST847BPDP6 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value 50(-50) 45(-45) 6.0(-5.0) 100 (-100) Unit V V V mA Symbol PD RJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range ESD Ratings (Note 6) Symbol Value Unit Electrostatic Discharge - Human Body Model Characteristic ESD HBM 4,000 V JEDEC Class 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DST847BPDP6 Document number: DS32036 Rev. 2 - 2 2 of 9 www.diodes.com March 2015 © Diodes Incorporated DST847BPDP6 Thermal Characteristics and Derating Information r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 370°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 100 1,000 0.4 Single Pulse 100 PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) 1,000 10 RJA(t) = r(t) * RJA RJA = 370°C/W TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 10 1 0.1 0.01 0.3 Note 3 0.2 0.1 0 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation DST847BPDP6 Document number: DS32036 Rev. 2 - 2 3 of 9 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Fig. 3 Power Dissipation vs. Ambient Temperature March 2015 © Diodes Incorporated DST847BPDP6 Electrical Characteristics – Q1 NPN Transistor (@TA = +25°C, unless otherwise specified.) Characteristic (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage 150 65 8.35 Max - Unit V V V V - - 15 nA hFE 200 220 300 470 Collector-Emitter Saturation Voltage VCE(sat) - 50 122 125 300 Base-Emitter Saturation Voltage VBE(sat) - 760 880 1,000 1,100 Base-Emitter Voltage VBE(on) 580 650 725 750 800 fT 100 175 - Ccbo - 1.5 - Collector-Base Cut-Off Current DC Current Gain Current Gain-Bandwidth Product Collector-Base Capacitance Note: Symbol BVCBO BVCES BVCEO BVEBO Min 50 50 45 6 ICBO Typical 150 Test Condition IC = 10µA, IB = 0 IC = 10µA, IB = 0 IC = 1mA, IB = 0 IE = 1µA, IC = 0 VCB = 30V IC = 10µA, VCE = 5V IC = 2.0mA, VCE = 5V IC = 10mA, IB = 0.5mA mV IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA mV IC = 100mA, IB = 5.0mA IC = 2.0mA, VCE = 5V mV IC = 10mA, VCE = 5V VCE = 5V, IC = 10mA, MHz f = 100MHz pF VCB = 10V, f = 1.0MHz 7. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%. DST847BPDP6 Document number: DS32036 Rev. 2 - 2 4 of 9 www.diodes.com March 2015 © Diodes Incorporated DST847BPDP6 Typical Characteristics – Q1 NPN Transistor (@TA = +25°C, unless otherwise specified.) 0.16 IB = 1.8mA 450 IB = 2mA VCE = 5V IB = 1.6mA 0.14 400 IC, COLLECTOR CURRENT (A) IB = 1.4mA IB = 1.2mA hFE, DC CURRENT GAIN IB = 1mA 0.10 IB = 0.8mA IB = 0.6mA 0.08 IB = 0.4mA 0.06 0.04 IB = 0.2mA TA = 100°C 300 250 TA = 25°C 200 150 T A = -55°C 100 0.02 0 TA = 150°C 350 0.12 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 0.20 IC/IB = 10 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.18 0.16 0.14 0.12 0.10 TA = 150°C 0.08 T A = 100°C 0.06 0.04 TA = 25°C TA = 10°C 0.1 TA = 50°C TA = 100°C 0.01 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VCE = 5V 0.8 TA = -55°C 0.6 T A = 25°C TA = 100°C 0.4 TA = 150°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current DST847BPDP6 Document number: DS32036 Rev. 2 - 2 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 V BE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) TA = 20°C T A = -55°C 0.02 0.2 0.1 IC/IB = 20 5 of 9 www.diodes.com 1.1 1.0 0.9 0.8 TA = -55°C 0.7 T A = 25°C 0.6 0.5 TA = 100°C 0.4 TA = 150°C 0.3 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current March 2015 © Diodes Incorporated DST847BPDP6 Electrical Characteristics – Q2 PNP Transistor (@TA = +25°C, unless otherwise specified.) Characteristic (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Max - Unit V V V V - Typical -100 -90 -65 -8.5 - -15 nA hFE 200 340 330 470 Collector-Emitter Saturation Voltage VCE(sat) - -70 -300 -175 -500 Base-Emitter Saturation Voltage VBE(sat) - -1,000 -1,100 Base-Emitter Voltage VBE(on) -600 - -760 -885 -670 -715 fT 100 340 - - 2.0 - Collector Cut-Off Current DC Current Gain Current Gain-Bandwidth Product Output Capacitance Note: Symbol BVCBO BVCES BVCEO BVEBO Min -50 -50 -45 -6 ICBO Cobo -780 -850 Test Condition IC = -10µA, IB = 0 IC = -10µA, IB = 0 IC = -1mA, IB = 0 IE = -1µA, IC = 0 VCB = -30V IC = -10µA, VCE = -5V IC = -2.0mA, VCE = -5V IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA mV IC = -100mA, IB = -5.0mA IC = -2.0mA, VCE = -5V mV IC = -10mA, VCE = -5V VCE = -5V, IC = -10mA, MHz f = 100MHz pF VCB = -10V, f = 1.0MHz 7. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%. DST847BPDP6 Document number: DS32036 Rev. 2 - 2 6 of 9 www.diodes.com March 2015 © Diodes Incorporated DST847BPDP6 Typical Characteristics – Q2 PNP Transistor(@TA = +25°C, unless otherwise specified.) 0.18 1,000 IB = -2mA IB = -1.2mA 0.12 T A = 125°C TA = 85°C IB = -1.4mA IB = -1mA IB = -0.8mA 0.10 IB = -0.6mA 0.08 IB = -0.4mA 0.06 0.04 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA 0.14 VCE = 5V T A = 150°C IB = -1.8mA 0.16 TA = 25°C TA = -55°C 100 IB = -0.2mA 0.02 0 0 10 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (A) Fig. 11 Typical DC Current Gain vs. Collector Current 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage 1 1 IC/IB = 20 0.1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 150°C TA = 125°C 0.2 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Base-Emitter Turn-On Voltage vs. Collector Current DST847BPDP6 Document number: DS32036 Rev. 2 - 2 -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0 TA = 25°C TA = -55°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Collector-Emitter Saturation Voltage vs. Collector Current VCE = -5V TA = 85°C T A = 125°C 0.01 0.1 0.01 0.1 1.2 TA = 150°C 0.1 7 of 9 www.diodes.com 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 T A = 25°C TA = 85°C TA = 125°C 0.4 TA = 150°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Saturation Voltage vs. Collector Current March 2015 © Diodes Incorporated DST847BPDP6 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 L E E1 e b (6 places) c A SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 Suggest Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DST847BPDP6 Document number: DS32036 Rev. 2 - 2 8 of 9 www.diodes.com March 2015 © Diodes Incorporated DST847BPDP6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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