ds32036

DST847BPDP6
45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963
Features
Mechanical Data




NPN & PNP Complementary SS
BVCEO > 45V
IC = 100mA High Collector Current
PD = 300mW Power Dissipation

Case: SOT-963

Case Material: Molded Plastic, “Green” Molding Compound;





1mm2 Package Footprint, 5 times smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208

Weight: 0.0027 grams (Approximate)
UL Flammability Classification Rating 94V-0
SOT-963
6
5
Q2
Q1
1
Top View
4
2
3
Device Schematic
Ordering Information (Note 4)
Device
DST847BPDP6-7
Notes:
Compliance
AEC-Q101
Marking
TC
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-963
TC
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
TC = Product Type Marking Code
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DST847BPDP6
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
50(-50)
45(-45)
6.0(-5.0)
100 (-100)
Unit
V
V
V
mA
Symbol
PD
RJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
ESD Ratings (Note 6)
Symbol
Value
Unit
Electrostatic Discharge - Human Body Model
Characteristic
ESD HBM
4,000
V
JEDEC Class
3A
Electrostatic Discharge - Machine Model
ESD MM
200
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
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DST847BPDP6
Thermal Characteristics and Derating Information
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA (t) = r(t) * R JA
RJA = 370°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 1 Transient Thermal Response
100
1,000
0.4
Single Pulse
100
PD, POWER DISSIPATION (W)
P(pk), PEAK TRANSIENT POWER (W)
1,000
10
RJA(t) = r(t) * RJA
RJA = 370°C/W
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
10
1
0.1
0.01
0.3
Note 3
0.2
0.1
0
0.00001
0.001
0.1
10
1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
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0
20
40
60
80 100 120 140 160
TA, AMBIENT TEMPERATURE (C)
Fig. 3 Power Dissipation vs. Ambient Temperature
March 2015
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q1 NPN Transistor (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
150
65
8.35
Max
-
Unit
V
V
V
V
-
-
15
nA
hFE
200
220
300
470
Collector-Emitter Saturation Voltage
VCE(sat)
-
50
122
125
300
Base-Emitter Saturation Voltage
VBE(sat)
-
760
880
1,000
1,100
Base-Emitter Voltage
VBE(on)
580
650
725
750
800
fT
100
175
-
Ccbo
-
1.5
-
Collector-Base Cut-Off Current
DC Current Gain
Current Gain-Bandwidth Product
Collector-Base Capacitance
Note:
Symbol
BVCBO
BVCES
BVCEO
BVEBO
Min
50
50
45
6
ICBO
Typical
150
Test Condition
IC = 10µA, IB = 0
IC = 10µA, IB = 0
IC = 1mA, IB = 0
IE = 1µA, IC = 0
VCB = 30V
IC = 10µA, VCE = 5V
IC = 2.0mA, VCE = 5V
IC = 10mA, IB = 0.5mA
mV
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
mV
IC = 100mA, IB = 5.0mA
IC = 2.0mA, VCE = 5V
mV
IC = 10mA, VCE = 5V
VCE = 5V, IC = 10mA,
MHz
f = 100MHz
pF VCB = 10V, f = 1.0MHz
7. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
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DST847BPDP6
Typical Characteristics – Q1 NPN Transistor (@TA = +25°C, unless otherwise specified.)
0.16
IB = 1.8mA
450
IB = 2mA
VCE = 5V
IB = 1.6mA
0.14
400
IC, COLLECTOR CURRENT (A)
IB = 1.4mA
IB = 1.2mA
hFE, DC CURRENT GAIN
IB = 1mA
0.10
IB = 0.8mA
IB = 0.6mA
0.08
IB = 0.4mA
0.06
0.04
IB = 0.2mA
TA = 100°C
300
250
TA = 25°C
200
150
T A = -55°C
100
0.02
0
TA = 150°C
350
0.12
50
0
0
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
0.20
IC/IB = 10
1
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.18
0.16
0.14
0.12
0.10
TA = 150°C
0.08
T A = 100°C
0.06
0.04
TA = 25°C
TA = 10°C
0.1
TA = 50°C
TA = 100°C
0.01
0
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
VCE = 5V
0.8
TA = -55°C
0.6
T A = 25°C
TA = 100°C
0.4
TA = 150°C
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
V BE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
TA = 20°C
T A = -55°C
0.02
0.2
0.1
IC/IB = 20
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1.1
1.0
0.9
0.8
TA = -55°C
0.7
T A = 25°C
0.6
0.5
TA = 100°C
0.4
TA = 150°C
0.3
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
March 2015
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q2 PNP Transistor (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Max
-
Unit
V
V
V
V
-
Typical
-100
-90
-65
-8.5
-
-15
nA
hFE
200
340
330
470
Collector-Emitter Saturation Voltage
VCE(sat)
-
-70
-300
-175
-500
Base-Emitter Saturation Voltage
VBE(sat)
-
-1,000
-1,100
Base-Emitter Voltage
VBE(on)
-600
-
-760
-885
-670
-715
fT
100
340
-
-
2.0
-
Collector Cut-Off Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
Note:
Symbol
BVCBO
BVCES
BVCEO
BVEBO
Min
-50
-50
-45
-6
ICBO
Cobo
-780
-850
Test Condition
IC = -10µA, IB = 0
IC = -10µA, IB = 0
IC = -1mA, IB = 0
IE = -1µA, IC = 0
VCB = -30V
IC = -10µA, VCE = -5V
IC = -2.0mA, VCE = -5V
IC = -10mA, IB = -0.5mA
mV
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
mV
IC = -100mA, IB = -5.0mA
IC = -2.0mA, VCE = -5V
mV
IC = -10mA, VCE = -5V
VCE = -5V, IC = -10mA,
MHz
f = 100MHz
pF VCB = -10V, f = 1.0MHz
7. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
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DST847BPDP6
Typical Characteristics – Q2 PNP Transistor(@TA = +25°C, unless otherwise specified.)
0.18
1,000
IB = -2mA
IB = -1.2mA
0.12
T A = 125°C
TA = 85°C
IB = -1.4mA
IB = -1mA
IB = -0.8mA
0.10
IB = -0.6mA
0.08
IB = -0.4mA
0.06
0.04
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (A)
IB = -1.6mA
0.14
VCE = 5V
T A = 150°C
IB = -1.8mA
0.16
TA = 25°C
TA = -55°C
100
IB = -0.2mA
0.02
0
0
10
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (A)
Fig. 11 Typical DC Current Gain vs. Collector Current
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 10 Typical Collector Current
vs. Collector-Emitter Voltage
1
1
IC/IB = 20
0.1
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.8
TA = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 150°C
TA = 125°C
0.2
0
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 14 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.0
TA = 25°C
TA = -55°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 13 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 12 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VCE = -5V
TA = 85°C
T A = 125°C
0.01
0.1
0.01
0.1
1.2
TA = 150°C
0.1
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1.2
IC/IB = 10
1.0
0.8
TA = -55°C
0.6
T A = 25°C
TA = 85°C
TA = 125°C
0.4
TA = 150°C
0.2
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 15 Typical Base-Emitter Saturation Voltage
vs. Collector Current
March 2015
© Diodes Incorporated
DST847BPDP6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
L
E
E1
e
b (6 places)
c
A
SOT-963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
C
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
A1
Suggest Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y1
Y (6X)
X (6X)
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DST847BPDP6
Document number: DS32036 Rev. 2 - 2
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