NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 40 V 5.7 mW @ 10 V 85 A Applications • DC Motor Drive • Reverse Battery Protection • Glow Plug D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS "20 V ID 85 A Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) TC = 25°C Steady State Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) G S N−CHANNEL MOSFET 4 61 PD 83 W IDM 228 A TJ, Tstg −55 to 175 °C IS 85 A EAS 240 mJ TL 260 °C 1 2 DPAK CASE 369AA (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW V58 03NG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 1.8 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 42 2 1 Drain 3 Gate Source Y WW 5803N G 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces. 3 = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 0 1 Publication Order Number: NVD5803N/D NVD5803N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 40 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.5 −7.4 gFS mV/°C VGS = 10 V, ID = 50 A 4.9 5.7 mW VGS = 5.0 V, ID = 30 A 6.7 VDS = 15 V, ID = 15 A 13.6 S 3220 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 390 270 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 12.7 td(on) 12.6 nC 51 VGS = 10 V, VDS = 20 V, ID = 50 A 3.8 12.7 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time tr Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 32 V, ID = 50 A, RG = 2.0 W tf ns 21.4 28.3 6.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.88 TJ = 150°C 0.73 tRR ta tb 1.2 27.2 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR V ns 14 13.2 17 nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NVD5803NT4G Package Shipping† DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NVD5803N TYPICAL CHARACTERISTICS 160 160 140 4.8 V 100 4.6 V 80 4.4 V 60 4.2 V 40 4.0 V 20 1 2 3 4 100 80 60 TJ = 25°C 40 0 5 TJ = 125°C 2 TJ = −55°C 3 4 5 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 50 A TJ = 25°C 0.008 0.006 2 4 6 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.008 TJ = 25°C 0.007 VGS = 5 V 0.006 VGS = 10 V 0.005 0.004 5 100000 1.8 ID = 50 A 1.6 VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1.0 35 50 65 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.7 20 Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 120 20 3.8 V 3.6 V 0.010 0.004 ID, DRAIN CURRENT (A) VGS = 5 V 120 0 VDS ≥ 10 V 140 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TJ = 25°C 10 V VGS = 0 V 10000 TJ = 150°C TJ = 125°C 1000 0.9 0.8 0.7 −55 −35 −15 5 25 45 65 100 85 105 125 145 165 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 40 NVD5803N TYPICAL CHARACTERISTICS 3000 2500 2000 1500 1000 Coss 500 0 Crss 0 10 20 30 15 VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 3500 C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C 9 6 12 Qgd 3 0 6 0 5 10 15 20 25 30 35 40 45 50 0 55 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 80 VGS = 0 V TJ = 25°C 70 IS, SOURCE CURRENT (A) t, TIME (ns) Qgs Qg, TOTAL GATE CHARGE (nC) 100 td(off) tr td(on) 10 tf 1 10 100 60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 250 VGS = 10 V Single Pulse TC = 25°C 100 10 ms 100 ms 10 1 ms 10 ms dc RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 18 VGS VDS DRAIN−TO−SOURCE VOLTAGE (V) VDD = 32 V ID = 85 A VGS = 10 V 1 24 QT 1000 1 TJ = 25°C 12 40 30 ID = 50 A VDS, DRAIN−TO−SOURCE VOLTAGE (V) 4000 100 ID = 85 A 200 150 100 50 0 25 VDS, DRAISN VOLTAGE (V) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NVD5803N RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 0.1 1 10 NVD5803N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE A C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D 2 PL 0.13 (0.005) M SOLDERING FOOTPRINT* 2.58 0.101 5.80 0.228 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T 6.20 0.244 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 −−− 0.035 0.050 0.155 −−− 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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