NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices http://onsemi.com V(BR)DSS RDS(ON) MAX 9.3 mΩ @ 10 V 25 V Applications D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol G Value Unit Drain--to--Source Voltage VDSS 25 V Gate--to--Source Voltage VGS ±20 V ID 11.3 A Continuous Drain Current RθJA (Note 1) TA = 25°C Power Dissipation RθJA (Note 1) TA = 25°C PD 1.95 W Continuous Drain Current RθJA (Note 2) TA = 25°C ID 9.2 A TA = 85°C TA = 85°C 7.1 PD 1.27 W Continuous Drain Current RθJC (Note 1) TC = 25°C ID 49 A Power Dissipation RθJC (Note 1) TC = 25°C PD 36.6 W TA = 25°C IDM 98 A tp=10ms Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) 1 2 1 3 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 1 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 38 IDmaxPkg 35 A TJ, TSTG --55 to +175 °C IS 30.5 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain--to--Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 11 Apk, L = 1.0 mH, RG = 25 Ω) EAS 60.5 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain YWW 48 63NG TC = 85°C 4 4 8.8 TA = 25°C Pulsed Drain Current S N--CHANNEL MOSFET YWW 48 63NG Parameter Power Dissipation RθJA (Note 2) 49 A 14 mΩ @ 4.5 V • VCORE Applications • DC--DC Converters • High Side Switching Steady State ID MAX 4 Drain YWW 48 63NG • • • • • 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4863N G = Year = Work Week = Device Code = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 June, 2010 -- Rev. 2 1 Publication Order Number: NTD4863N/D NTD4863N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction--to--Case (Drain) Parameter RθJC 4.1 °C/W Junction--to--TAB (Drain) RθJC--TAB 3.5 Junction--to--Ambient – Steady State (Note 1) RθJA 77 Junction--to--Ambient – Steady State (Note 2) RθJA 118 1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain--to--Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate--to--Source Leakage Current IDSS V 23 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain--to--Source On Resistance RDS(on) Forward Transconductance gFS 1.45 5.0 mV/°C VGS = 10 V ID = 30 A 8.4 9.3 VGS = 4.5 V ID = 30 A 12.8 14 VDS = 1.5 V, ID = 15 A mΩ S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 144 Total Gate Charge QG(TOT) 9.0 Threshold Gate Charge QG(TH) Gate--to--Source Charge QGS Gate--to--Drain Charge Total Gate Charge 990 VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V, ID = 30 A QGD QG(TOT) 253 1.0 3.4 pF 13.5 nC 4.1 VGS = 10 V, VDS = 15 V, ID = 30 A 17.8 nC SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time td(ON) tr td(OFF) 11.5 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω 19.7 13.5 tf 3.6 td(ON) 7.0 tr td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω tf 16.5 20.2 2.0 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns ns NTD4863N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 0.96 1.2 TJ = 125°C 0.83 Unit DRAIN--SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 30 A tRR ta tb V 10.9 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 5.4 ns 5.5 QRR 2.7 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD PACKAGE PARASITIC VALUES TA = 25°C 1.88 Gate Inductance LG 3.46 Gate Resistance RG 0.5 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 Ω NTD4863N TYPICAL PERFORMANCE CURVES 60 TJ = 25°C 4.2 V 10V VDS ≥ 10 V 4V 50 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 60 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 3.0 V 50 40 30 20 TJ = 125°C 10 TJ = 25°C 2.8 V 0 1 2 3 4 0 5 3 4 0.01 3 4 5 6 7 8 9 11 10 RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) Figure 2. Transfer Characteristics 0.02 5 0.020 TJ = 25°C 0.018 0.016 VGS = 4.5 V 0.014 0.012 0.010 VGS = 11.5 V 0.008 0.006 0.004 0.002 0 10 20 30 40 50 60 VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On--Resistance vs. Gate--to--Source Voltage Figure 4. On--Resistance vs. Drain Current and Gate Voltage 1.8 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 1.6 2 Figure 1. On--Region Characteristics 0.03 2 1 VGS, GATE--TO--SOURCE VOLTAGE (VOLTS) ID = 30 A TJ = 25°C 0 TJ = --55°C 0 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) 0.04 RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0 1.4 1.2 1.0 TJ = 150°C 1000 TJ = 125°C 100 0.8 0.6 --50 --25 0 25 50 75 100 125 150 175 10 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 5. On--Resistance Variation with Temperature Figure 6. Drain--to--Source Leakage Current vs. Drain Voltage http://onsemi.com 4 25 NTD4863N 1200 Ciss VGS = 0 V TJ = 25°C 1000 C, CAPACITANCE (pF) VGS , GATE--TO--SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 800 600 Coss 400 200 Crss 0 0 5 10 15 20 25 DRAIN--TO--SOURCE VOLTAGE (VOLTS) 10 8 6 4 2 0 0 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 100 tr td(off) td(on) tf 10 RG, GATE RESISTANCE (OHMS) 4 6 8 10 12 14 16 20 VGS = 0 V 25 20 15 10 5 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 100 VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS) EAS, SINGLE PULSE DRAIN--TO--SOURCE AVALANCHE ENERGY (mJ) 100 ms 1 0.6 0.8 1.0 Figure 10. Diode Forward Voltage vs. Current 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.4 VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS) 100 10 TJ = 25°C 0 0.2 100 1000 I D, DRAIN CURRENT (AMPS) 2 QG, TOTAL GATE CHARGE (nC) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.1 0.1 ID = 30 A TJ = 25°C 30 VDD = 15 V ID = 30 A VGS = 11.5 V 1 Q2 Figure 8. Gate--To--Source and Drain--To--Source Voltage vs. Total Charge 1000 1 1 VGS Q1 Figure 7. Capacitance Variation 10 QT 60 ID = 11 A 50 40 30 20 10 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4863N r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL PERFORMANCE CURVES 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E--05 1.0E--04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E--03 1.0E--02 t, TIME (ms) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) -- TC = P(pk) RθJC(t) 1.0E--01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD4863NT4G DPAK (Pb--Free) 2500 / Tape & Reel NTD4863N--1G IPAK (Pb--Free) 75 Units / Rail NTD4863N--35G IPAK Trimmed Lead (3.5 0.15 mm) (Pb--Free) 75 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4863N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 90° CW STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 ------ 0.040 0.155 ------ 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 -----1.01 3.93 ------ NTD4863N PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC--01 ISSUE O B V NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. C E R DIM A B C D E F G H J K R V W A SEATING PLANE K W F J G D H 3 PL 0.13 (0.005) W INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 IPAK (STRAIGHT LEAD DPAK) CASE 369D--01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 --T-SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 ------ MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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