NVD5867NL D

NVD5867NL
Power MOSFET
60 V, 22 A, 39 mW, Single N−Channel
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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RDS(on)
V(BR)DSS
ID
39 mW @ 10 V
60 V
22 A
50 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20
V
ID
22
A
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain Current RqJA (Notes 1, 2 &
3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
TC = 100°C
TC = 25°C
Steady
State
PD
W
43
21
ID
TA = 100°C
TA = 25°C
A
6.0
4
PD
W
3.3
IDM
85
A
TA = 25°C
IDmaxpkg
30
A
TJ, Tstg
−55 to
175
°C
IS
36
A
EAS
18
mJ
TL
260
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 19 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
1 2
3
1.7
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
S
N−CHANNEL MOSFET
4.0
TA = 100°C
Current Limited by
Package (Note 3)
G
16
TC = 100°C
TA = 25°C
D
Symbol
Value
Unit
Junction−to−Case (Drain) (Note 1)
RqJC
3.5
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
45
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
YWW
V58
67LG
Parameter
2
1 Drain 3
Gate Source
Y
= Year
WW
= Work Week
V5867L = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 3
1
Publication Order Number:
NVD5867NL/D
NVD5867NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
60
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.5
1.8
5.2
mV/°C
mW
VGS = 10 V, ID = 11 A
26
39
VGS = 4.5 V, ID = 11 A
33
50
VDS = 15 V, ID = 11 A
8.0
S
675
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
68
47
Total Gate Charge
QG(TOT)
15
Threshold Gate Charge
QG(TH)
1.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
VGS = 10 V, VDS = 48 V,
ID = 22 A
QGD
QG(TOT)
nC
2.2
4.3
VGS = 4.5 V, VDS = 48 V,
ID = 22 A
7.6
nC
RG
1.3
W
td(on)
6.5
ns
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 48 V,
ID = 22 A, RG = 2.5 W
tf
12.6
18.2
2.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.78
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
17
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 22 A
QRR
1.2
V
ns
13
4.0
12
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5867NL
TYPICAL PERFORMANCE CURVES
40
40
4.5 V
ID, DRAIN CURRENT (AMPS)
35
4V
30
3.8 V
25
3.6 V
20
3.4 V
15
3.2 V
10
3.0 V
5
2.8 V
0
1
2
3
4
15
TJ = 125°C
10
TJ = 25°C
5
TJ = −55°C
2
3
4
5
Figure 2. Transfer Characteristics
0.040
0.030
5
4
6
7
9
8
10
0.040
TJ = 25°C
0.035
VGS = 4.5 V
0.030
VGS = 10 V
0.025
0.020
5
10
15
20
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.4
10000
VGS = 0 V
ID = 22 A
VGS = 10 V
2.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
20
Figure 1. On−Region Characteristics
0.050
2.2
25
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID = 22 A
TJ = 25°C
3
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.060
0.020
VDS ≥ 10 V
35
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
10V
1.8
1.6
1.4
1.2
1.0
TJ = 150°C
1000
100
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
10
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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3
60
NVD5867NL
TYPICAL PERFORMANCE CURVES
VGS = 0 V
900
C, CAPACITANCE (pF)
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
1000
TJ = 25°C
800
Ciss
700
600
500
400
300
200
Coss
100
0
0
Crss
10
20
30
40
50
60
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
QT
8
VGS
6
Qgs
4
2
VDS = 48 V
ID = 22 A
TJ = 25°C
0
0
5
15
Figure 8. Gate−To−Source Voltage vs.
Total Charge
1000
20
100
tf
IS, SOURCE CURRENT (AMPS)
VDD = 48 V
ID = 22 A
VGS = 10 V
t, TIME (ns)
10
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
td(off)
tr
10
td(on)
1
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
15
10
5
0
0.5
100
100 ms
1 ms
10 ms
1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
10 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
100
10
0.7
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
I D, DRAIN CURRENT (AMPS)
Qgd
20
ID = 19 A
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NVD5867NL
TYPICAL PERFORMANCE CURVES
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
D = 0.5
1.0
0.2
0.1
0.05
0.02
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
t, PULSE TIME (s)
0.001
0.01
0.1
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NVD5867NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
SVD5867NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVD5867NL
PACKAGE DIMENSIONS
DPAK
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVD5867NL/D