NTTFS5820NL D

NTTFS5820NL
Power MOSFET
60 V, 37 A, 11.5 mW
Features
•
•
•
•
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
11.5 mW @ 10 V
60 V
Parameter
Symbol
Value
Unit
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
11
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 100°C
Power Dissipation RqJA
(Note 1)
Continuous Drain
Current RqJC (Note 1)
TA = 25°C
Steady
State
Pulsed Drain Current
PD
L = 0.1 mH
S (1,2,3)
24
PD
MARKING DIAGRAM
W
33
13
IDM
149
A
TJ,
Tstg
−55 to
+150
°C
IS
37
A
EAS
48
mJ
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
G (4)
A
37
TC = 100°C
Operating Junction and Storage Temperature
D (5−8)
1.1
ID
TC = 25°C
tp = 10 ms
W
2.7
TA = 100°C
TC = 25°C
N−Channel MOSFET
7
TC = 100°C
Power Dissipation
RqJC (Note 1)
IAS
31
A
TL
260
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
5820
A
Y
WW
G
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case – Steady
State (Note 1)
RqJC
3.8
°C/W
Junction−to−Ambient – Steady
State (Note 1)
RqJA
46.7
5820
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS5820NLTAG
Parameter
37 A
15 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain−to−Source Voltage
ID MAX
Package
Shipping†
WDFN8 1500 / Tape & Reel
(Pb−Free)
NTTFS5820NLTWG WDFN8 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1
Publication Order Number:
NTTFS5820NL/D
NTTFS5820NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
57
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.5
2.3
6.2
gFS
VGS = 10 V
ID = 8.7 A
10.1
11.5
VGS = 4.5 V
ID = 7.3 A
13.0
15
VDS = 5 V, ID = 10 A
V
mV/°C
mW
24.6
S
1462
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
150
96
VGS = 10 V, VDS = 48 V, ID = 10 A
28
VGS = 4.5 V, VDS = 48 V, ID = 10 A
15
nC
nC
Threshold Gate Charge
QG(TH)
1
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3
V
Gate Resistance
RG
0.62
W
td(on)
10
ns
VGS = 4.5 V, VDS = 48 V, ID = 10 A
4
8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
tf
28
19
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.79
TJ = 125°C
0.65
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
19
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
QRR
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2
V
ns
13
6
15
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTTFS5820NL
TYPICAL CHARACTERISTICS
50
3.6 V
40
3.4 V
30
60
50
40
30
20
3.2 V
10
3.0 V
10
0
2.8 V
0
1
2
3
4
5
1
TJ = −55°C
2
3
4
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.025
0.020
0.015
0.010
2
4
6
8
10
12
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.016
TJ = 25°C
0.014
VGS = 4.5 V
0.012
VGS = 10 V
0.010
0.008
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.1
1.7
TJ = 125°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 10 A
TJ = 25°C
1.9
TJ = 25°C
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.030
0.005
VDS ≥ 10 V
70
100,000
VGS = 0 V
ID = 10 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
3.8 V
60
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
4.0 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
70
80
VGS = 5 V
10 V
ID, DRAIN CURRENT (A)
80
10,000
1.5
1.3
1.1
0.9
TJ = 150°C
1,000
TJ = 125°C
0.7
0.5
−50
−25
0
25
50
75
100
125
150
100
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTTFS5820NL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25°C
1600
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1800
1400
Ciss
1200
1000
800
600
400
Coss
200
0
Crss
0
10
20
30
40
50
60
IS, SOURCE CURRENT (A)
t, TIME (ns)
2
0
VDS = 48 V
ID = 10 A
TJ = 25°C
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
td(off)
tf
td(on)
10
1
10
100
30
VGS = 0 V
TJ = 25°C
30
20
10
0
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1.0
50
VGS = 10 V
Single Pulse
TC = 25°C
100 ms
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
Qgd
Qgs
40
tr
10 ms
1 ms
10
10 ms
0.1
4
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
1
6
DRAIN−TO−SOURCE VOLTAGE (V)
VDD = 48 V
ID = 10 A
VGS = 4.5 V
100
8
Figure 7. Capacitance Variation
1000
1
QT
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
VDS, DRAISN VOLTAGE (V)
100
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTTFS5820NL
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
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5
1
10
100
1000
NTTFS5820NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
C
6X
e
0.10 C
SIDE VIEW
DETAIL A
SEATING
PLANE
DETAIL A
q
8X
0.10 B
C A
0.05
L
8X
e/2
0.42
14
0.116
0.078
0.116
0.058
0.009
0.012
0.025
0.012
0.002
0.055
0°
INCHES
NOM
0.030
***
0.012
0.008
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
***
0.017
0.005
0.059
***
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
***
0.022
0.008
0.063
12°
4X
0.66
M
E3
8
G
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
E2
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
*** 0.05
0.40
0.23
0.30
0.25
0.15
0.20
3.30 BSC
3.15
2.95
3.05
1.98
2.24
2.11
3.30 BSC
2.95
3.15
3.05
1.73
1.47
1.60
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.64
*** ***
0.30
0.43
0.56
0.06
0.13
0.20
1.60
1.40
1.50
0°
*** 12°
SOLDERING FOOTPRINT*
C
4X
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTTFS5820NL/D