MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 8 AMPERES, 100 VOLTS Features • • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! AEC−Q101 Qualified and PPAP Capable NBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) D2PAK CASE 418B 1 4 3 (Pin 1 = No Connect) MARKING DIAGRAM AYWW B8H100G AKA B8H100 A Y WW G AKA = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package = Polarity Indicator ORDERING INFORMATION Package Shipping† MBRB8H100T4G D2PAK (Pb−Free) 800 / Tape & Reel NBRB8H100T4G D2PAK (Pb−Free) 800 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 4 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBRB8H100/D MBRB8H100T4G, NBRB8H100T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 171°C IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 171°C IFRM Max Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz, 25°C) IFSM Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg 8 16 250 −65 to +175 A A A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case (Note 2) Junction−to−Ambient Symbol Value RqJC RqJA 1.1 44 Symbol Value Unit °C/W 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 8 A, TJ = 25°C) (IF = 8 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 0.71 0.55 4.5 5.3 Unit V mA mA DYNAMIC CHARACTERISTICS (Per Leg) CT Capacitance (VR = 4.0 V, TC = 25°C, Frequency = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 pF 600 MBRB8H100T4G, NBRB8H100T4G TYPICAL CHARACTERISTICS 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 1 25°C 150°C 0.1 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 10 IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 150°C 1 125°C 0.1 0.01 0.001 0.0001 150°C 1 0.1 1.1 125°C 10 25°C 0 10 20 30 40 50 60 70 80 90 100 150°C 10 1 125°C 0.1 0.01 25°C 0.001 0.0001 0 10 20 VR, REVERSE VOLTAGE (V) 14 1200 1000 800 600 400 200 0 10 20 30 40 50 60 70 80 60 80 70 90 100 90 dc 12 TJ = 25°C f = 1 MHz IF(AV), AVERAGE FORWARD CURRENT (A) C, CAPACITANCE (pF) 1800 0 50 Figure 4. Maximum Reverse Current 2000 1400 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 1600 30 100 10 Square Wave 8 6 4 2 0 150 RqJC = 1.1 °C/W 155 160 160 170 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case http://onsemi.com 3 175 MBRB8H100T4G, NBRB8H100T4G dc PF(AV), AVERAGE POWER DISSIPATION (W) 8 RJA = 44°C/W 7 RJA = 80°C/W 6 dc 5 4 3 Square Wave 2 1 0 0 20 40 60 80 100 120 140 160 180 5 TJ = 175°C Square Wave 4 3 dc 2 1 0 0 1 2 3 4 5 6 8 7 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Ambient Figure 8. Typical Forward Power Dissipation PF(MAX), MAXIMUM POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 5 TJ = 175°C Square Wave 4 dc 3 2 1 0 0 1 2 3 4 5 6 7 8 IF(AV), AVERAGE FORWARD CURRENT (A) R(t), TRANSIENT THERMAL RESPONSE (°C/W) Figure 9. Maximum Forward Power Dissipation 100 50% (DUTY CYCLE) 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 10. Thermal Response, Junction−to−Ambient http://onsemi.com 4 10 100 1000 MBRB8H100T4G, NBRB8H100T4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 3 A S −T− SEATING PLANE K J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE W H M T B M N R P U L M DIM A B C D E F G H J K L M N P R S V L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB8H100T4G, NBRB8H100T4G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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