MBRB4030 Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • • • • • http://onsemi.com Guardring for Stress Protection Maximum Die Size 175°C Operating Junction Temperature Short Heat Sink Tab Manufactured − Not Sheared Pb−Free Packages are Available SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 30 VOLTS 1 Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 4 3 Leads Readily Solderable 4 • Device Meets MSL1 Requirements • ESD Ratings: Machine Model, C (>400 V) 1 Human Body Model, 3B (>8000 V) 3 D2PAK CASE 418B STYLE 3 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR) TC = +115°C (Note 1) IF(AV) 40 A AY WW Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz), TC = +112°C IFRM 80 A B4030G AKA Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature Range (Note 2) TJ −65 to +175 °C dv/dt 10,000 V/ms W 600 mJ Voltage Rate of Change (Rated VR) Reverse Energy (Unclamped Inductive Surge), (TC = 25°C, L = 3.0 mH) MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Rating applies when pins 1 and 3 are connected. 2. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 6 1 A Y WW B4030 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB4030/D MBRB4030 THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 4) RqJA 50 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Notes 3 and 5), per Device (IF = 20 A, TC = + 25°C) (IF = 20 A, TC = +150°C) (IF = 40 A, TC = + 25°C) (IF = 40 A, TC = +150°C) VF Maximum Instantaneous Reverse Current (Note 5), per Device (Rated DC Voltage, TC = + 25°C) (Rated DC Voltage, TC = +125°C) IR V 0.46 0.34 0.55 0.45 mA 0.35 150 3. Rating applies when pins 1 and 3 are connected. 4. Rating applies when surface mounted on the miniumum pad size recommended. 5. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Package Shipping † D2PAK 50 Units / Rail MBRB4030G D2PAK (Pb−Free) 50 Units / Rail MBRB4030T4 D2PAK 800 Units / Tape & Reel MBRB4030T4G D2PAK 800 Units / Tape & Reel Device MBRB4030 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRB4030 ELECTRICAL CHARACTERISTICS 100 I F, INSTANTANEOUS FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) I F, INSTANTANEOUS FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) 100 TJ = 150°C 10 100°C 1.0 0.1 0 0.1 25°C TJ = 150°C 10 100°C 1.0 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS VOLTAGE (V) 0.7 0.1 0.8 0 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Maximum Forward Voltage 0.7 1.0 I R , REVERSE CURRENT (A) TJ = 150°C 0.1 100°C 0.01 TJ = 150°C 0.1 100°C 0.01 10−3 10−3 10−4 0 5 25°C 10−4 25°C 20 10 15 VR, REVERSE VOLTAGE (V) 25 30 10−5 0 Figure 3. Maximum Reverse Current 5 15 20 10 VR, REVERSE VOLTAGE (V) TJ = 25°C TYPICAL 1000 1 25 Figure 4. Typical Reverse Current 104 C, CAPACITANCE (pF) I R , REVERSE CURRENT (A) 0.6 Figure 2. Typical Forward Voltage 1.0 10−5 25°C MAXIMUM 10 VR, REVERSE VOLTAGE (V) Figure 5. Maximum and Typical Capacitance http://onsemi.com 3 30 MBRB4030 20 70 DC 60 50 π (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE IAV LOAD) SQUARE WAVE 40 I F(AV), AVERAGE FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) I F(AV), AVERAGE FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) ELECTRICAL CHARACTERISTICS RqJA = 25°C/W DC π (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE IAV LOAD) 10 30 10 20 10 20 0 100 110 120 130 140 TC, CASE TEMPERATURE (°C) 10 5 20 0 150 RqJA = 50°C/W DC 10 π (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE IAV LOAD) 6 10 4 0 50 100 TA, AMBIENT TEMPERATURE (°C) π (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE IAV LOAD) 30 20 SQUARE WAVE 10 20 DC 150 0 0 30 50 20 40 60 IF(AV), AVERAGE FORWARD CURRENT (A) 10 Figure 8. Current Derating, Free Air 70 Figure 9. Forward Power Dissipation 1.0 R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 TJ = 150°C 10 20 2 50 40 SQUARE WAVE 8 Figure 7. Current Derating PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) (PIN 1 SHORTED TO PIN 3) 12 150 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 6. Current Derating, Infinite Heatsink I F(AV), AVERAGE FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE SQUARE WAVE 15 SINGLE PULSE 0.1 0.01 tp Ppk Ppk TIME DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. t1 DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, for example, r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.1 1.0 10 t, TIME (ms) Figure 10. Thermal Response http://onsemi.com 4 100 1000 80 MBRB4030 PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 3 S −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB4030 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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