TC4404/TC4405 1.5A Dual Open-Drain MOSFET Drivers Features General Description • • • • • • The TC4404/TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pull-down sections, allowing the user to define the rates of rise and fall for a capacitive load. It also enables a reduced output swing, if driving a resistive load, or limiting base current when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 ns for a 1000 pF load. Independently Programmable Rise and Fall Times Low Output Impedance: 7 Typical High Speed tR, tF: <30 ns with 1000 pF Load Short Delay Times: <30 ns Wide Operating Range: 4.5V to 18V Latch-Up Protected: withstands > 500 mA Reverse Current (Either Polarity) • Input Withstands Negative Swings up to -5V Applications • • • • Motor Controls Driving Bipolar Transistors Driver for Non-Overlapping Totem Poles Reach-Up/Reach-Down Driver TABLE 1: DEVICE SELECTION TABLE Part Number Package Temp. Range TC4404COA 8-Lead SOIC 0°C to +70°C TC4404CPA 8-Lead PDIP 0°C to +70°C TC4404EOA 8-Lead SOIC -40°C to +85°C TC4404EPA 8-Lead PDIP -40°C to +85°C TC4405COA 8-Lead SOIC 0°C to +70°C TC4405CPA 8-Lead PDIP 0°C to +70°C TC4405EOA 8-Lead SOIC -40°C to +85°C TC4405EPA 8-Lead PDIP -40°C to +85°C For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-on, while maintaining fast turn-off and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-off. By proper positioning of the resistor, either NPN or PNP transistors can be driven. For driving many loads in low-power regimes, these drivers require significantly less power at higher frequencies and can be helpful in meeting low-power budgets as they eliminate shoot-through currents in the output stage. Package Type 8-Lead PDIP/SOIC VDD 1 IN A 2 TC4404 8 A TOP VDD 7 A BOTTOM IN A 2 1 3 6 B TOP IN B GND 4 5 B BOTTOM GND 4 IN B 2002-2016 Microchip Technology Inc. 3 TC4405 8 A TOP 7 A BOTTOM 6 B TOP 5 B BOTTOM DS20001418E-page 1 TC4404/TC4405 Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device, thus minimizing chip count. Unused open drains should be returned to the supply rail so that their device sources are connected (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains from drivers A and B, they may be paralleled for greater current carrying capacity. These devices are built to operate in the most demanding electrical environments. They will not latch-up under any conditions within their power and voltage ratings; they are not subject to damage when up to 5V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 0.5A of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV (HBM) of electrostatic discharge. Functional Block Diagram 1 VDD TC4404 Inverting 8 (6) 300 mV 7 (5) Input Pull-Down 2 (3) 4.7V GND Pull-Up TC4405 Noninverting 4 Effective Input C ≤ 12 pF DS20001418E-page 2 A (B) 2002-2016 Microchip Technology Inc. TC4404/TC4405 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage ..................................................... +22V Power Dissipation (TA 70°C) PDIP..................................................... 730 mW SOIC .................................................... 470 mW Operating Temperature Range C Version ........................................ 0°C to +70°C E Version...................................... -40°C to +85°C Storage Temperature Range .............. -65°C to +150°C † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise specified, all limits apply for typical values at ambient temperature TA = +25°C, with 4.5V VDD 18V. Parameter Sym. Min. Typ. Max. Units Logic 1, High Input Voltage VIH 2.4 Logic 0, Low Input Voltage VIL — Input Current IIN High Output Voltage Low Output Voltage Output Resistance Conditions — — V — 0.8 V –1 — 1 A VOH VDD – 0.025 — — V VOL — — 0.025 V RO — 7 10 IOUT = 10 mA, VDD = 18V; any drain Duty cycle2%, t 300 sec Input 0VVINVDD Output Peak Output Current (Any Drain) IPK — 1.5 — A Continuous Output Current (Any Drain) IDC — — 100 mA Latch-Up Protection (Any Drain) Withstand Reverse Current IR — > 500 — mA Duty cycle2%, t 300 sec tR — 25 30 ns Figure 4-1, CL = 1000 pF Fall Time tF — 25 30 ns Figure 4-1, CL = 1000 pF Delay Time tD1 — 15 30 ns Figure 4-1, CL = 1000 pF Delay Time tD2 — 32 50 ns Figure 4-1, CL = 1000 pF IS — — — — 4.5 0.4 mA VIN = 3V (both inputs) VIN = 0V (both inputs) Switching Time (Note 1) Rise Time Power Supply Power Supply Current Note 1: Switching times ensured by design. 2002-2016 Microchip Technology Inc. DS20001418E-page 3 TC4404/TC4405 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Characteristics: Unless otherwise indicated, operating temperature range with 4.5V VDD18V. Parameter Sym. Min. Typ. Max. Units Conditions Logic 1, High Input Voltage VIH 2.4 — — V Logic 0, Low Input Voltage VIL — — 0.8 V Input Current IIN –10 — 10 A High Output Voltage VOH VDD – 0.025 — — V Low Output Voltage VOL — — 0.025 V Output Resistance RO — 9 12 IOUT = 10 mA, VDD = 18V; any drain Duty cycle2%, t 300 sec 0VVINVDD Output Peak Output Current (Any Drain) IPK — 1.5 — A Continuous Output Current (Any Drain) IDC — — 100 mA Latch-Up Protection (Any Drain) Withstand Reverse Current IR — > 500 — mA Duty cycle2%, t 300 sec tR — — 40 ns Figure 4-1, CL = 1000 pF Fall Time tF — — 40 ns Figure 4-1, CL = 1000 pF Delay Time tD1 — — 40 ns Figure 4-1, CL = 1000 pF Delay Time tD2 — — 60 ns Figure 4-1, CL = 1000 pF IS — — — — 8 0.6 mA VIN = 3V (both inputs) VIN = 0V (both inputs) Switching Time (Note 1) Rise Time Power Supply Power Supply Current Note 1: Switching times ensured by design. TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym. Min. Typ. Max. Units Operating Temperature Range, C Version TA 0 — +70 °C Operating Temperature Range, E Version TA -40 — +85 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 8-Lead PDIP JA — +94 — °C/W Thermal Resistance, 8-Lead PDIP JC — +45 — °C/W Thermal Resistance, 8-Lead SOIC JA — +163 — °C/W Thermal Resistance, 8-Lead SOIC JC — +42 — °C/W Conditions Temperature Ranges Package Thermal Resistances DS20001418E-page 4 2002-2016 Microchip Technology Inc. TC4404/TC4405 TYPICAL PERFORMANCE CURVES 100 1000 pF 40 470 pF 20 0 80 1500 pF 60 tRISE (ns) 60 100 2200 pF 80 The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 2200 pF TA = +25°C 40 1 1 4 0 16 FIGURE 2-1: Voltage. 60 1000 pF 1000 pF 40 40 470 pF 20 100 pF 414 1500 pF 60 470 pF 20 100 pF 18 1 0 20 100 pF 41 VDD 614 816 118 tFALL (ns) 0 414 16 6 18 8 VDD = 5 VDD = 5V TA = +25°C 80 60 60 10V 10V 15V 15V 40 40 20 20 0 1 1 100 14 FIGURE 2-3: Load. 100 100 80 500 pF 1 100 pF Rise Time vs. Supply 2200 pF TA = +25°C T = +25°C A 470 pF 100 TA = +25°C 100 2200 pF T = +25°C A 80 80 1500 pF 2200 pF TA = +25°C 80 1500 pF 1000 pF 100 100 100 tRISE (ns) Note: TA = +25°C T = +25°C A 60 60 1000 pF 40 40 1000 18 16 0 100 CLOAD (pF) 10000 40 1 60 VDD = 5V TA = +25°C 60 1000 Rise Time vs. Capacitive VDD = 5V 80 80 1500 pF tFALL (ns) 2.0 10V 10V 15V 15V 50 CLOAD = 100 VDD = 17.5V 40 30 tFAL 470 pF 20 1 1 14 16 18 0 20 100 pF 4 FIGURE 2-2: Voltage. 6 8 1 1 VDD 14 16 Fall Time vs. Supply 2002-2016 Microchip Technology Inc. 18 0 100 20 20 0 100 1000 FIGURE 2-4: Load. 1000 10,000 10000 10 CLOAD (pF) Fall Time vs. Capacitive DS20001418E-page 5 -55 -35 -15 5 TC4404/TC4405 40 40 40 tD2 30 30 tFALL 20 20 tRISE 000 10000 10 Delay Time (ns) 50 tD1 20 20 10 48 108 6 FIGURE 2-6: Supply Voltage. tD1 tD1 60 CLOAD =1000pF VDD = 10V TA = +25°C Delay Time (ns) 50 40 tD2 30 30 2 4 6 8 10 DS20001418E-page 6 =0 0.1 4 6 8 10 Propagation Delay Time vs. BRWK IQSXWV = 1 1 0.1 4 6 8 Effect of Input Amplitude on 3.5 10 12 14 VDD 16 18 Quiescent Supply Current 25 10 TA = +25°C VDD = 18V BRWK IQSXWV =1 t D2 B I 20 =1 1 3.0 2.5 10 -55 -35 -15 5 VDRIVE (V) FIGURE 2-7: Delay Time. tD1 10 1 -55 1 -3514 18 45 65 85 105125 -15 16 5 25 4.0 VDD = 17.5V VLOAD = 1000pF 20 tD1 0 tD1 FIGURE 2-9: vs. Voltage. Propagation Delay vs. 40 10 I 30 VDD 60 20 B 1 BRWK IQSXWV = 0 10 -35 -15 1-55 1 14 516 2518 45 65 85 105 125 50 =1 tD2 tRISE 2 85 105 4 125 6 45 65 I TA = +25°C tD2 30 B 10 VDD ==17.5V CLOAD 1000 pF VLOAD = 1000pF +25°C TA = 40 30 tD2 40 FIGURE 2-8: Temperature. tD2 40 TA = +25°C Temperature Rise and Fall Times vs. 60 8 10 10 VDD == 1000 17.5VpF CLOAD =LOAD +25°C= 1000pF TA V 20 Temperature 60 CLOAD =1000pF VDD = 10V 50 TA = +25°C tD2 20 tD1 10 10 -55 -35 -15 5 250 45 65 2 85 105125 4 6 4 8 6 FIGURE 2-5: Temperature. F 30 50 Delay Time (ns) 15V Time (ns) 10V 50 60 60 CLOAD =1000pF VDD = 10V 50 TA = +25°C IQUIESCENT (mA) VDD = 5V 60 CLOAD = 1000 pF VDD = 17.5V 50 IQUIESCENT (mA) 60 tD1 W @ 15 10 B I T =0 2.0 5 0.1 25 -45 65 -15 85 105 4 856105125 8 10 4 12 6 14 8 16 118 55 -35 5 125 25 45 65 Temperature FIGURE 2-10: vs. Temperature. Quiescent Supply Current 2002-2016 Microchip Technology Inc. TC4404/TC4405 25 25 20 20 RDS(ON) () =1 WRUVW&DVH @ TJ = +150°C 15 15 10 25 45 65 85 105 125 W @ TJ = +150°C 5 10 T\S @ +25°C 4 6 8 FIGURE 2-11: 1 1 VDD 14 16 18 5 T 4 6 8 1 @ +25°C 1 14 16 18 Pull-Up Output Resistance. 25 WRUVW&DVH @ TJ = +150°C T 1 RDS(ON) () 20 W @ TJ = +150°C 10 @ +25°C 1 14 15 16 18 5 T\S @ +25°C 4 6 FIGURE 2-12: Resistance. 8 1 1 VDD 14 16 18 Pull-Down Output 2002-2016 Microchip Technology Inc. DS20001418E-page 7 TC4404/TC4405 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 8-Lead PDIP/SOIC Symbol Description 1 VDD Supply Input, 4.5V to 18V 2 IN A Control Input A, TTL/CMOS compatible input 3 IN B Control Input B, TTL/CMOS compatible input 4 GND Ground 5 B BOTTOM Output B, pull-down 6 B TOP 7 A BOTTOM Output A, pull-down 8 A TOP DS20001418E-page 8 Output B, pull-up Output A, pull-up 2002-2016 Microchip Technology Inc. TC4404/TC4405 4.0 APPLICATIONS INFORMATION 4.1 Circuit Layout Guidelines In addition, it is advisable that low ESR (Equivalent Series Resistance) bypass capacitors (4.7 µF or 10 µF tantalum) be placed as close to the driver as possible. In order to minimize the length of the output trace, the driver should be physically located as close as possible to the device it is driving. Long power supply and ground traces should be avoided as the added inductance causes unwanted voltage transients. Power and ground planes should be used wherever possible. +5V 90% Input VDD = 18V 0V 4.7 µF Input 0.1 µF tD2 tF tR 90% 90% Output 8.7 1 tD1 18V 1 2 10% Output 10% 10% 0V Inverting Driver CL = 1000 pF 2 +5V 90% Input 0V 4 10% 18V Input: 100 kHz, square wave, tRISE = tFALL 10 ns Output tD1 90% tR 10% 0V 90% tD2 tF 10% Noninverting Driver FIGURE 4-1: 4.2 Switching Time Test Circuit. Typical Applications VDD (4.5V - 18V) VDD (4.5V - 18V) From TTL TC4404 RT RT VOUT GND FIGURE 4-2: Zero Crossover Current Totem-Pole Switch. 2002-2016 Microchip Technology Inc. From TTL TC4405 RIB RIB GND FIGURE 4-3: Driving Bipolar Transistors. DS20001418E-page 9 TC4404/TC4405 +24V 47 k 47 k +12V 15V 0.1µF 15V 0.1µF Direction (TTL Level) RT Speed (PWM) Motor RT GND FIGURE 4-4: TC4469 TC4404 ISENSE Servo Motor Control. +12V +12V Switched +12V +5V +5V From TTL GND TC4404 GND Switched -12V -12V FIGURE 4-5: DS20001418E-page 10 -12V Reach-Up and Reach-Down Driving. 2002-2016 Microchip Technology Inc. TC4404/TC4405 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW 8-Lead SOIC (3.90 mm) NNN Legend: XX...X Y YY WW NNN e3 * Note: Example TC4404 EPA e3 256 1519 Example TC4404C OA e3 1519 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2002-2016 Microchip Technology Inc. DS20001418E-page 11 TC4404/TC4405 /HDG3ODVWLF'XDO,Q/LQH3$PLO%RG\>3',3@ 1RWH For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D A N B E1 NOTE 1 1 2 TOP VIEW E C A2 A 3/$1( L c A1 e eB 8X b1 8X b .010 C SIDE VIEW END VIEW Microchip Technology Drawing No. C04-018D Sheet 1 of 2 DS20001418E-page 12 2002-2016 Microchip Technology Inc. TC4404/TC4405 /HDG3ODVWLF'XDO,Q/LQH3$PLO%RG\>3',3@ 1RWH For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging ALTERNATE LEAD DESIGN (VENDOR DEPENDENT) DATUM A DATUM A b b e 2 e 2 e Units Dimension Limits Number of Pins N e Pitch Top to Seating Plane A Molded Package Thickness A2 Base to Seating Plane A1 Shoulder to Shoulder Width E Molded Package Width E1 Overall Length D Tip to Seating Plane L c Lead Thickness Upper Lead Width b1 b Lower Lead Width Overall Row Spacing eB § e MIN .115 .015 .290 .240 .348 .115 .008 .040 .014 - INCHES NOM 8 .100 BSC .130 .310 .250 .365 .130 .010 .060 .018 - MAX .210 .195 .325 .280 .400 .150 .015 .070 .022 .430 Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. § Significant Characteristic 3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side. 4. Dimensioning and tolerancing per ASME Y14.5M BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing No. C04-018D Sheet 2 of 2 2002-2016 Microchip Technology Inc. DS20001418E-page 13 TC4404/TC4405 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20001418E-page 14 2002-2016 Microchip Technology Inc. TC4404/TC4405 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2002-2016 Microchip Technology Inc. DS20001418E-page 15 TC4404/TC4405 !"#$%& ' ! "#$%&"'"" ($) % *++&&&! !+$ DS20001418E-page 16 2002-2016 Microchip Technology Inc. TC4404/TC4405 APPENDIX A: REVISION HISTORY Revision E (April 2016) The following is the list of modifications: 1. 2. 3. 4. Removed all information regarding the discontinued CERDIP package. Added Temperature Specifications Table. Added Section 5.0, Packaging Information. Added Product Identification System page. Revision D (December 2012) Added a note to each package outline drawing. 2002-2016 Microchip Technology Inc. DS20001418E-page 17 TC4404/TC4405 NOTES: DS20001418E-page 18 2002-2016 Microchip Technology Inc. TC4404/TC4405 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX Device Temperature Range Package Device: TC4404: TC4405: Temperature Range: C E = 0C to +70C = -40C to +85C Package: OA = PA = OA713 = Dual Open-Drain MOSFET Driver Dual Open-Drain MOSFET Driver Plastic Small Outline (3.90 mm Body),8-Lead, SOIC Plastic Dual In-Line (300 mil Body), 8-Lead, PDIP Plastic Small Outline (3.90 mm Body),8-Lead, SOIC (Tape and Reel) 2002-2016 Microchip Technology Inc. Examples: a) TC4404COA: b) TC4404EOA: c) TC4404CPA: d) TC4405EPA: e) TC4404EOA713: 1.5A Dual Open-Drain Driver, 0°C to +70°C, 8LD SOIC Package 1.5A Dual Open-Drain Driver, -40°C to +85°C, 8LD SOIC Package 1.5A Dual Open-Drain Driver, 0°C to +70°C, 8LD PDIP Package 1.5A Dual Open-Drain Driver, -40°C to +85°C, 8LD PDIP Package 1.5A Dual Open-Drain Driver, -40°C to +85°C, 8LD SOIC Package, Tape and Reel MOSFET MOSFET MOSFET MOSFET MOSFET DS20001418E-page 19 TC4404/TC4405 NOTES: DS20001418E-page 20 2002-2016 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITYMANAGEMENTSYSTEM CERTIFIEDBYDNV == ISO/TS16949== 2002-2016 Microchip Technology Inc. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, ETHERSYNCH, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2002-2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. 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