1 TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pulldown sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 nsec for a 1000-pF load. There is no upper limit. For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously-used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other TelCom drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets. Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device, ■ Independently-Programmable Rise and Fall Times Low Output Impedance ................................ 7Ω Typ High Speed tR, tF ....... <30 nsec with 1000 pF Load Short Delay Times .................................... < 30 nsec Wide Operating Range .......................... 4.5V to 18V Latch-Up Protected ......... Will Withstand >500 mA Reverse Current (Either Polarity) Input Withstands Negative Swings Up to –5V APPLICATIONS ■ ■ ■ ■ Motor Controls Driving Bipolar Transistors Driver for Nonoverlapping Totem Poles Reach-Up/Reach-Down Driver ORDERING INFORMATION Part No. Package Temperature Range TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin PDIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C TC4405COA TC4405CPA TC4405EOA TC4405EPA TC4405MJA 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin PDIP 8-Pin CerDIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C FUNCTIONAL BLOCK DIAGRAM 1 INPUT 6 PULL UP PULL DOWN 2 (3) 4.7V GND 5 7 8 (6) 7 (5) 4 VDD TC4404 INVERTING 300 mV 3 TC4405 NONINVERTING 4 EFFECTIVE INPUT C 12 pF 8 A (B) TC4404/5-6 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-219 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 thus minimizing chip count. Unused open drains should be returned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity. These devices are built to operate in the most demanding electrical environments. They will not latch up under any conditions within their power and voltage ratings; they are not subject to damage when up to 5V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 1/2 amp of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. ABSOLUTE MAXIMUM RATINGS Supply Voltage ......................................................... +22V Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ............................................... 150°C/W CerDIP RθJ-C ................................................. 55°C/W PDIP RθJ-A .................................................. 125°C/W PDIP RθJ-C .................................................... 45°C/W SOIC RθJ-A .................................................. 155°C/W SOIC RθJ-C .................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic ............................................................. 730mW CerDP ............................................................. 800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Specifications measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit – 0V ≤ VIN ≤ VDD 2.4 — –1 — — — — 0.8 1 V V µA VDD – 0.025 — — — — > 500 — — 7 1.5 — — — 0.025 10 — 100 — V V Ω A mA mA Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF — — — — 25 25 15 32 30 30 30 50 nsec nsec nsec nsec VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 4.5 0.4 mA Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO IPK IDC IR High Output Voltage Low Output Voltage Output Resistance IOUT = 10 mA, VDD = 18V; Any Drain Peak Output Current (Any Drain) Duty cycle < 2%, t ≤ 300µsec Continuous Output Current (Any Drain) Latch-Up Protection (Any Drain) Duty cycle < 2%, t ≤ 300µsec Withstand Reverse Current Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Power Supply IS NOTE: 4-220 Power Supply Current 1. Switching times guaranteed by design. TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 1 TC4404 TC4405 ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit – 0V ≤ VIN ≤ VDD 2.4 — – 10 — — — — 0.8 10 V V µA VDD – 0.025 — — — — >500 — — 9 1.5 — — — 0.025 12 — 100 — V V Ω A mA mA Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF Figure 1, CL = 1000 pF — — — — — — — — 40 40 40 60 nsec nsec nsec nsec VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) — — — — 8 0.6 mA 2 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO IPK IDC IR High Output Voltage Low Output Voltage Output Resistance IOUT = 10 mA, VDD = 18V; Any Drain Peak Output Current (Any Drain) Duty cycle <2%, t ≤ 300µsec Continuous Output Current (Any Drain) Latch-Up Protection (Any Drain) Duty cycle <2%, t ≤ 300µsec Withstand Reverse Current Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time 3 4 Power Supply IS NOTE Power Supply Current 5 1. Switching times guaranteed by design. Circuit Layout Guidelines Avoid long power supply and ground traces (added inductance causes unwanted voltage transients). Use power and ground planes wherever possible. In addition, it is advisable that low ESR bypass capacitors (4.7µF or 10µF tantalum) be placed as close to the driver as possible. The driver should be physically located as close to the device it is driving as possible to minimize the length of the output trace. PIN CONFIGURATIONS (DIP AND SOIC) VDD 1 8 A TOP VDD 1 8 A TOP IN A 2 7 A BOTTOM IN A 2 7 A BOTTOM IN B 3 6 B TOP IN B 3 6 B TOP COM 4 5 B BOTTOM COM 4 5 B BOTTOM VDD 1 8 A TOP VDD 1 8 A TOP IN A 2 7 A BOTTOM IN A 2 7 A BOTTOM IN B 3 6 B TOP IN B 3 6 B TOP COM 4 5 B BOTTOM COM 4 5 B BOTTOM TC4404 TC4405 TELCOM SEMICONDUCTOR, INC. TC4404 TC4405 6 7 8 4-221 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 +5V 90% INPUT 0V VDD = 18V 4.7 µF 0.1 µF 10% tD1 18V tD2 tF tR 90% 90% OUTPUT 1 2,3 INPUT 1 OUTPUT INVERTING DRIVER CL = 1000 pF 2 10% 10% 0V 8,7 +5V 90% INPUT 4 0V 10% 18V INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec tD1 90% tR OUTPUT 10% 0V tD2 90% tF 10% NONINVERTING DRIVER Figure 1. Switching Time Test Circuit 4-222 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 1 TC4404 TC4405 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage 100 2200 pF 1000 pF 40 470 pF 60 1000 pF 40 60 6 3 15V 40 20 20 100 pF 100 pF 4 10V 470 pF 20 8 10 12 VDD 14 16 0 18 4 6 8 10 12 VDD 14 16 0 100 18 Rise and Fall Times vs. Temperature Fall Time vs. Capacitive Load VDD = 5V 50 60 TIME (nsec) 80 10V 15V 40 VDD = 17.5V 4 CLOAD = 1000 pF TA = +25°C 50 40 30 t FALL 20 20 10,000 60 CLOAD = 1000 pF DELAY TIME (nsec) TA = +25°C 1000 CLOAD (pF) Propagation Delay vs. Supply Voltage 60 100 tFALL (nsec) 80 1500 pF tRISE (nsec) 60 2 VDD = 5V TA = +25°C TA = +25°C 80 1500 pF tFALL (nsec) tRISE (nsec) 2200 pF TA = +25°C 80 0 Rise TIme vs. Capacitive Load 100 100 t D2 5 40 30 t D1 20 t RISE 0 100 1000 10 –55 –35 –15 5 25 45 65 85 105 125 TEMPERATURE (°C) 10,000 CLOAD (pF) Effect of Input Amplitude on Delay Time VDD = 10V TA= +25°C DELAY TIME (nsec) DELAY TIME (nsec) 50 40 t D2 30 20 t D1 0 2 40 8 10 TELCOM SEMICONDUCTOR, INC. 10 12 VDD 14 16 18 6 TA = +25°C tD2 30 20 10 –55 –35 –15 5 25 45 65 85 105 125 TEMPERATURE (°C) 7 BOTH INPUTS = 1 1 BOTH INPUTS = 0 tD1 4 6 VDRIVE (V) 8 10 VDD = 17.5V VLOAD = 1000 pF IQUIESCENT (mA) CLOAD = 1000 pF 6 Quiescent Supply Current vs. Voltage 60 50 4 Propagation Delay Time vs. Temperature 60 10 10 0.1 4 6 8 10 12 VDD 14 16 18 4-223 8 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4405 TYPICAL CHARACTERISTICS (Cont.) Quiescent Supply Current vs. Temperature Pull-Down Output Resistance Pull-Up Output Resistance 4.0 25 25 VDD = 18V 2.5 WORST CASE @ TJ = +150°C RDS(ON) (Ω) 3.0 15 10 15 10 TYP @ +25°C TYP @ +25°C 8 8 2.0 –55 –35 –15 5 25 45 65 85 105 125 TEMPERATURE (°C) WORST CASE @ TJ = +150°C 20 20 R(DS(ON) (Ω) IQUIESCENT (mA) BOTH INPUTS = 1 3.5 5 5 4 6 8 10 12 VDD 14 16 18 4 6 8 10 14 12 VDD 16 18 TYPICAL APPLICATIONS Zero Crossover Current Totem-Pole Switch Driving Bipolar Transistors VDD (4.5V – 18V) VDD (4.5V–18V) RT FROM TTL TC4404 VOUT RT FROM TTL RIB TC4405 RIB GND GND REACH-UP AND REACH-DOWN DRIVING Servo Motor Control +12V +24V +12V 47 kΩ 47 kΩ +12V 15V SWITCHED +12V 15V 0.1 µF 0.1 µF +5V +5V DIRECTION (TTL LEVEL) RT SPEED (PWM) MOTOR FROM TTL TC4404 RT GND SWITCHED –12V I SENSE TC4469 GND TC4404 GND –12V 4-224 –12V TELCOM SEMICONDUCTOR, INC.