High Efficiency 600V/15A MOS IPM with PrestoMOS™

New Product Bulletin
High Efficiency 600V/15A MOS IPM with PrestoMOS™
BM65364S-VA / BM65364S-VC
Integrated high performance PrestoMOSTM* contributes
to increased energy savings in AC systems
Product Outline
With the trend towards increasing awareness for greater energy savings and environmental protection comes a
need to minimize power consumption in AC systems, which is typically the largest consumer of energy in the
home. More specifically, it is important to improve loss during steady state operation at low loads as well as large
power loads to the IPM during AC startup. ROHM’s BM65364S integrates a gate driver, bootstrap diodes, and
bootstrap current control function into a single module that simplifies inverter system design along with a low ON
resistance Super Junction MOSFET (PrestoMOS TM) in the inverter block to achieve class-leading power
consumption and significant energy savings - particularly during steady state operation
HSDIP25
*PrestoMOS is a registered trademark of ROHM Co., Ltd.
(’Presto’ is an Italian musical term meaning ‘extremely quick’.)
■ Modular design makes configuring inverter systems easy
Features
MOS-IPM Configuration
• PrestoMOS™ delivers class-leading ON
resistance for greater energy savings
(improved APF*)
• Simplifies the design of inverter systems
3 VBV
Bootstrap Diodes
Fast Recovery types
[email protected]
• Multiple protection functions provide
worry-free use
• Pin-compatibility with ROHM’s IGBT IPM
allows for common board designs
• High quality system ensured through
integrated production at the chip level
LVIC (Low Side Gate Driver)
• Multiple protection functions
UVLO: Under Voltage Lock Out
SCP: Short-Circuit Protection
TSD: Thermal Shut Down
• Fault signal output
*APF (Annual Performance Factor)
Based on the energy consumption
efficiency when operating a home
AC system for an entire year
P 24
2 VBU
U 23
4 VBW
5
6
7
8
9
HINU
HINV
HINW
HVCC
GND
10
11
12
13
LINU
LINV
LINW
LVCC
HVIC
V
22
HVIC (High Side Gate Driver)
• 600V Gate driver
• SOI (Silicon-On-Insulator) process
• UVLO: Under Voltage Lock Out
(Floating power supply)
• Bootstrap diode current
limiting function
W 21
Inverter
NU 20
LVIC
14 FO
NV
CIN
15
16 GND
• 600V/15A PrestoMOS™
• Low ON resistance
• Low VF high-speed trr body diode
19
NW 18
Gate drivers (LVIC, HVIC), bootstrap diodes, and a Super Junction MOSFET (PrestoMOSTM) integrated into a single package
■ Reduces steady state loss
■ Offered in 2 package types
IGBT-IPM vs MOS-IPM Energy Loss Comparison
Loss Comparison (600V/15A products)
Ta=25°C, P=400V, Vcc=15V, fc=5kHz, 3-phase modulation
0.28
1.778
8
34%
2-R1.6
Mirror
Finished
less
MOS-IPM
0.28
2.54
((BM65364S-VA)
BM65364S-VA)
AC current during steady state operation
ope
0
1
2
I (Amps)
3
IGBT-IPM : IGBT used in the inverter block
MOS-IPM : MOSFET (PrestoMOS™) used in the inverter block
4
5
38
20X1.778(=35.56)
35
0.28
1.778
16-0.5
8
24
43%
less
16-0.5
Part No.
Lot No.
3MIN
8
Loss (W)
IGBT-IPM
-VC (HSDIP25VC)
38
20X1.778(=35.56)
35
14X2.54(=35.56)
4-C1.2
8-0.6
2-R1.6
Mirror
Finished
0.28
2.54
24
-VA (HSDIP25)
8
Compared to IGBT IPMs, ROHM’s new MOS IPM signficantly reduces
power loss in AC systems during steady state operation (2-4A)
Part No.
Lot No.
3MIN
14X2.54(=35.56)
4-C1.2
8-0.6
In addition to the standard HSDIP25 type, the HSDIP25VC package is available
featuring staggered control pins that make dip soldering easier and provide better
board isolation
30th March,2015.
.57F6859E 03.2015