NTLUS4C16N Power MOSFET 30 V, 11.7 A, Single N−Channel, 1.6x1.6x0.55 mm mCoolt UDFN6 Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications www.onsemi.com MOSFET RDS(on) MAX V(BR)DSS 11.4 mW @ 10 V 13.3 mW @ 4.5 V 14.2 mW @ 3.7 V 30 V • Power Load Switch • Wireless Charging • DC−DC Converters ID MAX 11.7 A 15.2 mW @ 3.3 V 20 mW @ 2.5 V 40 mW @ 1.8 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±12 V ID 9.4 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C 6.8 t≤5s TA = 25°C 11.7 Steady State TA = 25°C PD G S N−CHANNEL MOSFET W 1.53 S t≤5s TA = 25°C Steady State TA = 25°C 2.37 ID TA = 85°C MARKING DIAGRAM D A 6.1 Pin 1 4.4 1 UDFN6 (mCOOL]) CASE 517AU AHMG G AH = Specific Device Code M = Date Code G = Pb−Free Package Power Dissipation (Note 2) TA = 25°C PD 0.65 W Pulsed Drain Current tp = 10 ms IDM 28 A TJ, TSTG -55 to 150 °C (Note: Microdot may be in either location) Source Current (Body Diode) (Note 1) IS 2.0 A PIN CONNECTIONS Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C MOSFET Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. D 1 D 2 G 3 6 D 5 D 4 S D S (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2015 October, 2015 − Rev. 0 1 Publication Order Number: NTLUS4C16N/D NTLUS4C16N THERMAL RESISTANCE RATINGS Symbol Max Junction-to-Ambient – Steady State (Note 3) RθJA 81.7 Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 52.8 Junction-to-Ambient – Steady State min Pad (Note 4) RθJA 193.6 Parameter Unit °C/W 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 30 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = 24 V V 11 mV/°C TJ = 25°C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.6 1.1 3 V mV/°C mW VGS = 10 V, ID = 8.0 A 9.3 11.4 VGS = 4.5 V, ID = 5.0 A 10.7 13.3 VGS = 3.7 V, ID = 3.0 A 11.4 14.2 VGS = 3.3 V, ID = 3.0 A 12.0 15.2 VGS = 2.5 V, ID = 2.5 A 14.3 20 VGS = 1.8 V, ID = 2.5 A 26 40 VDS = 1.5 V, ID = 5.0 A 31 S 690 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 15 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 26 Total Gate Charge QG(TOT) 7.5 Threshold Gate Charge QG(TH) 0.6 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 4.5 V, VDS = 15 V; ID = 5.0 A 305 nC 1.3 1.4 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 6.0 VGS = 4.5 V, VDD = 15 V, ID = 5.0 A, RG = 1 W tf 14.5 17.5 2.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.7 TJ = 125°C 0.5 1.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTLUS4C16N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 21 VGS = 0 V, dIs/dt = 100 A/ms, IS = 2.0 A QRR ns 11 10 10.5 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. DEVICE ORDERING INFORMATION Package Shipping† NTLUS4C16NTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUS4C16NTBG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 NTLUS4C16N TYPICAL CHARACTERISTICS 25 25 VDS = 5 V 20 10 V to 2.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 1.8 V 1.6 V 15 1.4 V 10 5 1.2 V 0 1 2 3 4 10 5 0 0 0.4 0.8 1.2 1.6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2 30 26 24 22 20 18 16 14 12 10 28 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 25°C ID = 8 A 28 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 25°C 5 30 8 TJ = 25°C VGS = 1.8 V 26 24 22 20 18 VGS = 2.5 V VGS = 3.7 V 16 14 VGS = 3.3 V 12 VGS = 4.5 V VGS = 10 V 10 8 1 2 3 4 5 6 7 8 9 0 10 4 6 8 10 12 14 16 18 20 22 24 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 VGS = 10 V ID = 8 A TJ = 150°C 10000 IDSS, LEAKAGE (nA) 1.4 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized) TJ = 125°C 15 TJ = −55°C TJ = 25°C 0 20 1.2 1.0 0.8 0.6 −50 TJ = 125°C 1000 TJ = 85°C 100 VGS = 0 V 10 −25 0 25 50 75 100 125 150 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTLUS4C16N TYPICAL CHARACTERISTICS Coss 100 Crss TJ = 25°C VGS = 0 V f = 1 MHz 0 5 10 15 20 25 30 QT 7 25 6 20 5 4 15 3 Qgs Qgd 10 2 TJ = 25°C VDS = 15 V ID = 5 A 1 0 0 30 1 2 3 4 5 6 7 8 9 10 11 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 5 0 12 2.0 1000.0 VDD = 15 V ID = 15 A VGS = 4.5 V IS, SOURCE CURRENT (A) 1.8 td(off) 100.0 t, TIME (ns) VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) Ciss 10 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 tf tr td(on) 10.0 VGS = 0 V 1.6 1.4 TJ = 25°C 1.2 1.0 0.8 TJ = 125°C 0.6 0.4 0.2 1.0 0.0 1 10 0.0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 100 ms 1 VGS < 10 V TA = 25°C Single Pulse Response 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 1.60 10 ms 10 0.1 1 ms 10 ms ID = 250 mA 1.40 VGS(th), (V) ID, DRAIN CURRENT (A) 1.80 1.20 1.00 0.80 0.60 0.40 dc 0.20 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 0.00 −50 Figure 11. Maximum Rated Forward Biased Safe Operating Area −25 0 25 50 75 100 TJ, TEMPERATURE (°C) 125 Figure 12. VGS(th) vs. Temperature www.onsemi.com 5 150 175 NTLUS4C16N TYPICAL CHARACTERISTICS 400 350 POWER (W) 300 250 200 150 100 50 0 1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03 SINGLE PULSE TIME (°C) RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) Figure 13. Single Pulse Maximum Power Dissipation 1000 50% Duty Cycle 20% 10% 10 5% 2% 100 1 1% 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 14. Thermal Response www.onsemi.com 6 1 10 100 1000 NTLUS4C16N PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AU ISSUE O A B D 2X 0.10 C ÉÉÉ ÉÉÉ PIN ONE REFERENCE 2X L1 L E DETAIL A OPTIONAL CONSTRUCTION 0.10 C A DETAIL B (A3) 0.05 C A1 0.05 C 0.10 C A B A3 DETAIL B C SEATING PLANE D2 3 1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 0.62 0.72 0.15 0.25 0.57 0.67 0.55 BSC 0.25 BSC 0.20 0.30 −−− 0.15 SOLDERMASK DEFINED MOUNTING FOOTPRINT* e F 6X ÉÉÉ ÉÉÉ OPTIONAL CONSTRUCTION A1 SIDE VIEW DIM A A1 A3 b D E e D1 D2 E2 F G L L1 MOLD CMPD EXPOSED Cu TOP VIEW NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 0.82 E2 G L 0.16 0.43 0.10 C A B 0.68 2X 6 DETAIL A 4 D1 BOTTOM VIEW 6X 0.35 b 0.10 C A B 0.05 C 1.90 NOTE 3 0.28 1 6X 0.50 PITCH 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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