NSM3005NZ Small Signal BJT and MOSFET 30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET www.onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 6 Typical Applications 1 UDFN6 CASE 517AT mCOOLt • Portable Devices Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector–Emitter Voltage VCEO 30 V Collector–Base Voltage VCBO 40 V Emitter–Base Voltage VEBO 5.0 V Collector Current IC 500 mA Base Current IB 50 mA MARKING DIAGRAM 1 XX MG G XX = Specific Device Code M = Date Code G = Pb−Free Package Q2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID 224 mA Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C 162 t≤5s TA = 25°C 241 Pulsed Drain Current Tp = 10 ms Source Current (Body Diode) (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. PIN CONNECTIONS IDM 673 mA IS 120 mA Symbol Value Unit RqJA PD 245 0.8 °C/W W TJ, TSTG −55 to 150 °C TL 260 °C THERMAL CHARACTERISTICS Parameter Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION Device Package Shipping† NSS3005NZTAG UDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 1 1 Publication Order Number: NSM3005NZ/D NSM3005NZ Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 100 mA 40 − − V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 30 − − V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100 mA 5.0 − − V OFF CHARACTERISTICS Collector Cutoff Current ICBO VCB = 25 V, IE = 0 A − − 1.0 mA Emitter Cutoff Current IEBO VEB = 5.0 V, IC = 0 A − − 10 mA hFE VCE = 3.0 V, IC = 30 mA 20 − 100 VCE = 3.0 V, IC = 100 mA 20 − 100 VCE = 3.0 V, IC = 500 mA 20 − 100 IC = 500 mA, IB = 50 mA − − 0.4 V ON CHARACTERISTICS (Note 2) DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) IC = 500 mA, IB = 50 mA − − 1.1 V Base–Emitter Turn–On Voltage VBE(on) VCE = 1.0 V, IC = 500 mA − − 1.0 V Q2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 µA, ref to 25°C − 19 − mV/°C Zero Gate Votlage Drain Current IDSS VGS = 0 V, VDS = 16 V, TJ = 25°C − − 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V − − ±2.0 mA OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS = VDS, ID = 250 mA 0.4 − 1.0 V VGS(TH)/TJ − − 1.9 − mV/°C RDS(ON) VGS = 4.5 V, ID = 100 mA − 0.65 1.4 W VGS = 2.5 V, ID = 50 mA − 0.9 1.9 VGS = 1.8 V, ID = 20 mA − 1.1 2.2 1.4 4.3 gFS VDS = 5.0 V, ID = 100 mA VGS = 1.5 V, ID = 10 mA − 0.56 − S Input Capacitance CISS − 15.8 − pF Output Capacitance COSS f = 1.0 MHz, VGS = 0 V, VDS = 15 V − 3.5 − Reverse Transfer Capacitance CRSS − 2.4 − − 0.70 − Forward Transconductance CHARGES AND CAPACITANCES VGS = 4.5 V, VDS = 15 V; ID = 200 mA Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) − 0.05 − Gate−to−Source Charge QGS − 0.14 − Gate−to−Drain Charge QGD − 0.10 − − 18 − nC SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDD = 15 V, ID = 200 mA, RG = 2 W − 35 − Td(ON) − 201 − tf − 110 − − 0.55 1.0 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 V NSM3005NZ TYPICAL CHARACTERISTICS − Q1 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1000 TJ = 150°C TJ = 25°C 10 TJ = −55°C 0.1 1 10 100 TJ = 150°C TJ = 25°C TJ = −55°C 1 1000 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. PNP DC Current Gain vs. Collector Current Figure 2. PNP VCE vs. IC 1.0 1.1 IC/IB = 10 1.0 VBE(on), BASE−EMITTER (V) VCE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.1 0.01 1 0.9 0.8 TJ = −55°C 0.7 TJ = 25°C 0.6 0.5 0.4 TJ = 150°C 0.3 0.2 0.1 0.9 TJ = −55°C 0.8 0.7 TJ = 25°C 0.6 0.5 TJ = 150°C 0.4 0.3 VCE = 1 V 0.2 1 10 100 1 1000 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. PNP VBE(sat) vs. IC Figure 4. PNP VBE(on) vs. IC 1.0 1000 1000 0.9 0.8 C, CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) IC/IB = 10 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 500 mA 10 mA IC = 1.0 mA 0.1 Cobo 10 100 mA 300 mA 0.01 Cibo 100 1 10 1 100 0.1 1 10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 5. PNP VCE vs. IB Figure 6. PNP Capacitance www.onsemi.com 3 100 NSM3005NZ TYPICAL CHARACTERISTICS − Q2 3.0 V ID, DRAIN CURRENT (A) 0.9 1.0 VGS = 2.5 V 0.9 3.5 V 0.8 2.0 V 4.0 V 0.7 1.8 V 4.5 V 0.6 0.5 1.5 V 0.4 0.3 1.2 V 0.2 TJ = 125°C 0.6 0.5 0.4 0.3 0.2 0.1 0 0.5 1.0 1.5 2.0 2.5 0 3.0 1.0 1.5 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 7. On−Region Characteristics Figure 8. Transfer Characteristics 5.0 4.5 TJ = 25°C ID = 0.1 A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.0 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3.0 5.0 4.5 TJ = 25°C 4.0 VGS = 1.5 V 3.5 3.0 2.5 VGS = 1.8 V 2.0 1.5 VGS = 2.5 V 1.0 0.5 0 VGS = 4.5 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 9. On−Resistance vs. Gate−to−Source Voltage Figure 10. On−Resistance vs. Drain Current and Gate Voltage 1.8 1000 VGS = 4.5 V ID = 100 mA 1.7 1.6 TJ = 125°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C 0.7 0.1 0 RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE TJ = −55°C VDS = 5 V 0.8 ID, DRAIN CURRENT (A) 1.0 1.5 1.4 VGS = 1.8 V ID = 20 mA 1.3 1.2 1.1 1.0 100 TJ = 85°C 10 0.9 0.8 0.7 −50 1 −25 0 25 50 75 100 125 2 150 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. On−Resistance Variation with Temperature Figure 12. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 20 NSM3005NZ TYPICAL CHARACTERISTICS − Q2 25 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C f = 1 MHz 20 Ciss 15 10 Coss 5 Crss 0 0 2 4 6 8 10 12 14 16 5 15 VGS VDS 12 3 9 2 QGS QGD 6 VDS = 15 V TJ = 25°C ID = 0.2 A 1 3 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 13. Capacitance Variation Figure 14. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 1000 IS, SOURCE CURRENT (A) VGS = 4.5 V VDD = 15 V td(off) tf 100 tr td(on) TJ = 125°C TJ = 25°C 1 TJ = −55°C 0.1 0.01 10 1 10 0.4 0.5 100 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 15. Resistive Switching Time Variation vs. Gate Resistance Figure 16. Diode Forward Voltage vs. Current VGS(th), GATE−TO−SOURCE THRESHOLD VOLTAGE (V) t, TIME (ns) 18 QT 4 20 18 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 0.85 0.75 ID = 250 mA 0.65 0.55 0.45 0.35 −50 −25 0 25 50 75 100 TJ, TEMPERATURE (°C) Figure 17. Threshold Voltage www.onsemi.com 5 125 150 NSM3005NZ PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AT ISSUE O A B D 2X 0.10 C PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ L L1 DETAIL A E OPTIONAL CONSTRUCTION EXPOSED Cu TOP VIEW A (A3) DETAIL B 0.05 C 6X A1 D1 DETAIL A ÉÉÉ ÈÈÈ MOLD CMPD K 1 A3 DETAIL B C A1 SEATING PLANE 1.34 3 6 4 L e BOTTOM VIEW 6X 2X 0.58 E1 6X MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 1.14 1.34 0.38 0.58 0.54 0.74 0.20 −−− 0.15 0.35 −−− 0.10 SOLDERMASK DEFINED MOUNTING FOOTPRINT* 2X D2 6X DIM A A1 A3 b D E e D1 D2 E1 K L L1 OPTIONAL CONSTRUCTION 0.05 C SIDE VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. b 6X 0.10 C A B 0.05 C 0.48 0.74 1.90 NOTE 3 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mCOOL is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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