NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX Applications • • • • 4.5 mW @ 10 V 30 V Low−Side DC−DC Converters Power Load Switch Notebook Battery Management Motor Control N−Channel MOSFET Parameter D (5−8) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 17 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.24 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25 A Continuous Drain Current RqJA (Note 2) TA = 85°C S (1,2,3) MARKING DIAGRAM 18 TA = 25°C PD TA = 25°C ID TA = 85°C 4.7 W 11 A 8.0 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.86 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 75 A Power Dissipation RqJC (Note 1) TC = 25°C PD 43.1 W TA = 25°C, tp = 10 ms IDM 230 A TJ, Tstg −55 to +150 °C IS 48 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk, L = 0.1 mH, RG = 25 W) EAS 68.5 mJ Pulsed Drain Current TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) G (4) 12 TA = 85°C Steady State 75 A 7.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Power Dissipation RqJA ≤ 10 s (Note 1) ID MAX 54 TL 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4937 A Y WW G 4937 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 260 °C ORDERING INFORMATION Device Package Shipping† NTTFS4937NTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS4937NTWG WDFN8 5000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2013 January, 2013 − Rev. 3 1 Publication Order Number: NTTFS4937N/D NTTFS4937N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 2.9 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 55.9 Junction−to−Ambient – Steady State (Note 4) RqJA 144.6 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 26.4 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) gFS 1.6 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 20 A 3.4 ID = 10 A 3.4 ID = 20 A 4.9 ID = 10 A 4.8 VDS = 1.5 V, ID = 15 A mV/°C 4.5 mW 7.0 37 S 2540 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 26 Total Gate Charge QG(TOT) 15.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 893 nC 4.0 7.6 1.9 VGS = 10 V, VDS = 15 V, ID = 20 A 35.5 nC 13.9 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 21.2 21.2 7.4 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4937N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 9.8 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19.8 28.8 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.85 TJ = 125°C 0.72 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.1 ns 38.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A V 20.2 18.2 QRR 33 nC Source Inductance LS 0.38 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.054 1.3 1.1 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.0 W NTTFS4937N TYPICAL CHARACTERISTICS 100 10 V 90 ID, DRAIN CURRENT (A) VGS = 4.0 V 70 3.4 V 60 3.2 V 50 40 3.0 V 30 20 10 0 0.5 1.5 1 2 2.5 4 4.5 60 50 40 TJ = 25°C 30 20 TJ = 125°C 10 2.6 V 3.5 3 70 0 5 TJ = −55°C 1.0 1.5 2.0 3.0 2.5 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 2.8 V 2.4 V VDS ≥ 10 V 80 3.6 V 80 ID, DRAIN CURRENT (A) 90 TJ = 25°C 4.5 V 4.0 0.0070 0.060 ID = 20 A TJ = 25°C 0.050 TJ = 25°C 0.0065 0.0060 0.040 0.0055 0.0050 0.030 VGS = 4.5 V 0.0045 0.020 0.0040 0.010 0.000 VGS = 10 V 0.0035 2 3 4 5 6 7 8 9 10 VGS (V) 0.0030 10 20 30 40 50 60 70 80 90 100110 120130140150160 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 10,000 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.7 ID = 20 A VGS = 10 V 1.6 1.5 VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150°C 1.4 1.3 1000 1.2 1.1 1.0 0.9 TJ = 125°C 100 TJ = 85°C 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 10 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4937N 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS Ciss VGS = 0 V TJ = 25°C Coss Crss 0 5 10 15 20 25 30 6 5 Qgd 4 Qgs 3 VDD = 15 V VGS = 10 V ID = 20 A 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 30 VGS = 0 V td(off) 100 IS, SOURCE CURRENT (A) t, TIME (ns) 7 Figure 7. Capacitance Variation tf tr td(on) 10 1 10 25 20 TJ = 125°C 15 10 5 TJ = 25°C 0 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 ms 10 1 ms 10 ms VGS = 20 V Single Pulse TC = 25°C 1 dc RDS(on) Limit Thermal Limit Package Limit 0.01 0.01 0.1 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) TJ = 25°C 8 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V 0.1 QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 11 10 100 70 ID = 37 A 60 50 40 30 20 10 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTTFS4937N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 NTTFS4937N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A C 6X e 0.10 C SIDE VIEW DETAIL A SEATING PLANE DETAIL A q 8X 0.10 B C A 0.05 L 8X e/2 0.42 14 0.116 0.078 0.116 0.058 0.009 0.012 0.025 0.012 0.002 0.055 0° MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 *** 0.022 0.008 0.063 12° 4X 0.66 M E3 8 G INCHES NOM 0.030 *** 0.012 0.008 0.130 BSC 0.120 0.083 0.130 BSC 0.120 0.063 0.012 0.026 BSC 0.016 *** 0.017 0.005 0.059 *** MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K E2 MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 *** 0.05 0.40 0.23 0.30 0.25 0.15 0.20 3.30 BSC 3.15 2.95 3.05 1.98 2.24 2.11 3.30 BSC 2.95 3.15 3.05 1.73 1.47 1.60 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.64 *** *** 0.30 0.43 0.56 0.06 0.13 0.20 1.60 1.40 1.50 0° *** 12° SOLDERING FOOTPRINT* C 4X DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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