MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 100 VOLTS Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection Pb−Free Package is Available SMC CASE 403 PLASTIC Mechanical Characteristics • Case: Epoxy, Molded • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (At Rated VR, TL = 100°C) IF(AV) 3.0 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 130 A Operating Junction Temperature Range (Note 1) TJ − 65 to +175 °C THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead RJL °C/W 11 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 AYWW B310 B310 = Specific Device Code A = Assembly Location Y = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS3100T3 SMC 2500/Tape & Reel SMC (Pb−Free) 2500/Tape & Reel MBRS3100T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRS3100T3/D MBRS3100T3 ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25°C) (iF = 6.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 125°C) (iF = 6.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Value Unit V 0.79 0.90 0.62 0.70 mA 0.05 5.0 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. 10 75°C 125°C IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 25°C 1 0.1 125°C 75°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.9 0.4 0.5 0.6 0.7 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1 1000 125°C TJ = 25°C 1E−05 C, CAPACITANCE (pF) 1E−04 75°C 1E−06 25°C 1E−07 1E−08 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1E−03 IR, REVERSE CURRENT (A) 25°C 100 10 0 20 40 60 80 100 0 20 40 60 80 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 100 MBRS3100T3 Pfo, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) 7 6 dc 5 4 SQUARE WAVE 3 2 RATED VOLTAGE APPLIED RJL = 11 °C/W TJ = 150°C 1 0 60 80 100 120 140 160 4.5 dc 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating − Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 6 MBRS3100T3 PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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