MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. • • • • • Small Compact Surface Mountable Package with J–Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 100 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 217 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • • SMC CASE 403 PLASTIC Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Marking: B310 MARKING DIAGRAM YWW B310 Y = Year WW = Work Week B310 = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 Volts Average Rectified Forward Current (At Rated VR, TL = 100°C) IF(AV) 3.0 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 130 Amps Operating Junction Temperature Range TJ – 65 to +150 °C RθJL 11 °C/W ORDERING INFORMATION Device Package Shipping MBRS3100T3 SMC 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Thermal Resistance – Junction to Lead Semiconductor Components Industries, LLC, 2001 July, 2001 – Rev. 0 1 Publication Order Number: MBRS3100T3/D MBRS3100T3 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) (iF = 6.0 A, TJ = 25°C) (iF = 3.0 A, TJ = 125°C) (iF = 6.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Volts 0.79 0.90 0.62 0.70 mA 0.05 5.0 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 10 75°C 125°C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 25°C 1 0.1 75°C 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.9 0.4 0.5 0.6 0.7 0.9 1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1000 125°C TJ = 25°C 1E–05 C, CAPACITANCE (pF) 1E–04 75°C 1E–06 25°C 1E–07 1E–08 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1E–03 IR, REVERSE CURRENT (AMPS) 125°C 100 10 0 20 40 60 100 80 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 100 MBRS3100T3 Pfo, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 7 6 dc 5 4 SQUARE WAVE 3 2 RATED VOLTAGE APPLIED RJL = 11 °C/W TJ = 150°C 1 0 60 80 100 120 140 160 4.5 dc 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating – Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 6 MBRS3100T3 PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403–03 ISSUE B S A D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. B C K P J INCHES DIM MIN MAX A 0.260 0.280 B 0.220 0.240 C 0.075 0.095 D 0.115 0.121 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.305 0.320 MILLIMETERS MIN MAX 6.60 7.11 5.59 6.10 1.90 2.41 2.92 3.07 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 7.75 8.13 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 4 MBRS3100T3/D