NDF10N60Z D

NDF10N60Z
N-Channel Power MOSFET
600 V, 0.75 W
Features
•
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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VDSS (@ TJmax)
RDS(ON) (MAX) @ 5 A
650 V
0.75 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
NDF
Unit
VDSS
600
V
Continuous Drain Current, RqJC (Note 1)
ID
10
A
Continuous Drain Current
TA = 100°C, RqJC (Note 1)
ID
6.0
A
Pulsed Drain Current,
tP = 10 ms
IDM
40
A
Power Dissipation, RqJC
PD
39
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy
(L = 6.0 mH, ID = 10 A)
EAS
300
mJ
ESD (HBM) (JESD22−A114)
Vesd
3900
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 13)
VISO
4500
V
Peak Diode Recovery (Note 2)
dV/dt
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current (Body Diode)
IS
10
A
Maximum Temperature for
Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Rating
Drain−to−Source Voltage
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature.
2. IS ≤ 10 A, di/dt ≤ 200 A/ms, VDD = 80% BVDSS
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 13
1
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF10N60ZG
NDF10N60ZH
TO−220FP
CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
Publication Order Number:
NDF10N60Z/D
NDF10N60Z
THERMAL RESISTANCE
Symbol
NDF10N60Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
3.2
°C/W
Junction−to−Ambient Steady State (Note 3)
RqJA
50
3. Insertion mounted
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain−to−Source Leakage Current
V
0.6
V/°C
IDSS
1
VGS = ±20 V
IGSS
±10
mA
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 5.0 A
RDS(on)
0.65
0.75
W
Gate Threshold Voltage
VDS = VGS, ID = 100 mA
VGS(th)
3.9
4.5
V
VDS = 15 V, ID = 10 A
gFS
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
25°C
150°C
mA
50
ON CHARACTERISTICS (Note 4)
Forward Transconductance
3.0
7.9
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Ciss
1097
1373
1645
Coss
118
150
178
Reverse Transfer Capacitance (Note 5)
Crss
20
35
50
Total Gate Charge (Note 5)
Qg
23
47
68
Qgs
5.0
9.0
14
Qgd
12
26
36
Output Capacitance (Note 5)
Gate−to−Source Charge (Note 5)
Gate−to−Drain (“Miller”) Charge (Note 5)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 300 V, ID = 10 A,
VGS = 10 V
Plateau Voltage
VGP
Gate Resistance
Rg
6.4
0.5
1.5
pF
nC
V
4.5
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 10 A,
VGS = 10 V, RG = 5 Ω
Fall Time
td(on)
15
tr
31
td(off)
40
tf
23
ns
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 10 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 10 A, di/dt = 100 A/ms
trr
395
ns
Qrr
3.0
mC
Reverse Recovery Charge
1.6
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
5. Guaranteed by design.
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2
NDF10N60Z
TYPICAL CHARACTERISTICS
20
7.0 V
14
6.4 V
12
6.2 V
10
6.0 V
8
5.8 V
6
5.6 V
5.4 V
4
4
8
12
16
20
24
14
12
10
8
TJ = 150°C
6
4
TJ = −55°C
2
5
6
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.75
0.70
ID = 5 A
0.65
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
0.80
TJ = 25°C
VGS = 10 V
0.75
0.70
0.65
0.60
2.5
5.0
7.5
10
12.5
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
10,000
2.7
VGS = 0 V
VGS = 10 V
ID = 5 A
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
2.2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.80
0.60
TJ = 25°C
16
2
0
5.0 V
0
VDS = 30 V
18
6.6 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 V
16
2
0
20
VGS = 15 V
TJ = 25°C
ID, DRAIN CURRENT (A)
18
TJ = 150°C
1000
1.7
1.2
100
TJ = 100°C
0.7
0.2
−50
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
600
NDF10N60Z
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
f = 1 MHz
3000
2500
2000
Ciss
1500
1000
Crss
500
0
Coss
0
25
50
75
100
125
150
175
20
400
ID = 10 A
TJ = 25°C
15
300
VDS
QT
10
200
Qgs
Qgd
0
0
5
10
IS, SOURCE CURRENT (A)
tr
tf
td(on)
10
25
30
35
40
45
50
0
55
8
6
4
2
0
100
VGS = 0 V
TJ = 25°C
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Source Current vs.
Forward Voltage
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
10
VDD = 300 V
ID = 10 A
VGS = 10 V
1
20
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
10
15
100
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
VGS
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
200
10
100 ms 10 ms
VGS ≤ 30 V
Single Pulse
TC = 25°C
1 ms
10 ms
dc
1
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3500
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF10N60Z
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4
1000
1.0
NDF10N60Z
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
Duty Cycle = 50%
1 20%
10%
5%
0.1
2%
1%
0.01
RqJC = 3.2°C/W
Steady State
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
PULSE TIME (sec)
Figure 12. Thermal Impedance for NDF10N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
100
1000
NDF10N60Z
ORDERING INFORMATION
Package
Shipping†
NDF10N60ZG
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF10N60ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF10N60ZG
or
NDF10N60ZH
AYWW
Gate
Source
Drain
TO−220FP
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
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6
NDF10N60Z
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
A
E
B
P
E/2
0.14
Q
D
M
B A
A
H1
M
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
SEATING
PLANE
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
FRONT VIEW
SECTION D−D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20
A
NOTE 6
NOTE 6
H1
D
D
A
SECTION A−A
ALTERNATE CONSTRUCTION
ON Semiconductor and the
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NDF10N60Z/D