ONSEMI NDF10N60Z

NDF10N60Z, NDP10N60Z
N-Channel Power MOSFET
0.65 W, 600 Volts
Features
•
•
•
•
•
•
Low ON Resistance
Low Gate Charge
Zener Diode−protected Gate
100% Avalanche Tested
ROHS Compliant
This is a Pb−Free Device
•
•
•
•
Adapter (Notebook, Printer, Gaming)
LCD Panel Power
ATX Power Supplies
Lighting Ballasts
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Applications
VDSS
RDS(ON) (TYP) @ 5 A
600 V
0.65 Ω
N−Channel
D (2)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
VDSS
600 (Note 1)
V
Continuous Drain Current
ID
10 (Note 2)
A
Continuous Drain Current
TA = 100°C
ID
5.7 (Note 2)
A
IDM
36 (Note 2)
A
Pulsed Drain Current,
VGS @ 10 V
NDF10N60Z
NDP10N60Z
Power Dissipation (Note 1)
PD
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche
Energy, L = 6.0 mH,
ID = 10 A
EAS
300
mJ
ESD (HBM)
(JESD 22−114−B)
Vesd
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 13)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 3)
V/ns
Continuous Source
Current (Body Diode)
IS
10
A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
TL
TPKG
300
260
°C
TJ, Tstg
−55 to 150
°C
Operating Junction and
Storage Temperature Range
36
125
Unit
May, 2009 − Rev. 1
S (3)
TO−220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
W
3900
NDF10N60ZG
or
NDP10N60ZG
AYWW
V
4500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. IS ≤ 10 A, di/dt ≤ 200 A/ms, VDD = 80% BVDSS
© Semiconductor Components Industries, LLC, 2009
G (1)
1
Gate
Source
TO−220AB
CASE 221A
STYLE 5
Drain
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NDF10N60ZG
TO−220FP
50 Units/Rail
NDP10N60ZG
TO−220AB
In Development
Publication Order Number:
NDF10N60Z/D
NDF10N60Z, NDP10N60Z
THERMAL RESISTANCE
Symbol
NDF10N60Z
NDP10N60Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
3.4
1.0
°C/W
Junction−to−Ambient Steady State (Note 4)
RqJA
50
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 5.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 250 mA
VGS(th)
VDS = 15 V, ID = 10 A
gFS
7.9
S
Ciss
1425
pF
Coss
150
Crss
35
Qg
47
±10
mA
0.75
W
4.5
V
ON CHARACTERISTICS (Note 5)
Forward Transconductance
0.65
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
VDD = 300 V, ID = 10 A,
VGS = 10 V
Gate Resistance
nC
Qgs
9.0
Qgd
26
Rg
1.5
W
td(on)
15
ns
tr
31
td(off)
40
tf
23
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 10 A,
VGS = 10 V, RG = 5 Ω
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 10 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 10 A, di/dt = 100 A/ms
trr
395
ns
Qrr
3.0
mC
Reverse Recovery Charge
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 V
7.0 V
14
6.4 V
12
6.2 V
10
6.0 V
8
5.8 V
6
5.6 V
5.4 V
4
4
8
12
16
20
24
14
12
10
8
TJ = 150°C
6
4
TJ = −55°C
2
5
6
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.75
0.70
ID = 5 A
0.65
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
8
0.80
TJ = 25°C
VGS = 10 V
0.75
0.70
0.65
0.60
2.5
5.0
7.5
10
12.5
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
2.7
10,000
VGS = 0 V
VGS = 10 V
ID = 5 A
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
2.2
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.80
0.60
TJ = 25°C
16
2
0
5.0 V
0
VDS = 30 V
18
6.6 V
ID, DRAIN CURRENT (A)
16
2
0
20
VGS = 15 V
TJ = 25°C
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
18
TJ = 150°C
1000
1.7
1.2
100
TJ = 100°C
0.7
0.2
−50
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
600
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
3000
2000
1000
0
Crss
Coss
0
25
300
VDS
QT
10
Ciss
500
ID = 10 A
TJ = 25°C
15
2500
1500
400
50
75
100
125
150
175
200
Qgs
Qgd
0
0
5
10
IS, SOURCE CURRENT (A)
tr
tf
td(on)
10
25
30
35
40
45
50
0
55
8
6
4
2
0
100
VGS = 0 V
TJ = 25°C
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Source Current vs.
Forward Voltage
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
10
VDD = 300 V
ID = 10 A
VGS = 10 V
1
20
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
10
15
100
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
VGS
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
200
VGS = 10 V
Single Pulse
TC = 25°C
10
1 ms
100 ms
10 ms
1
10 ms
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
3500
Mounted on 2″ sq. FR4
board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one
die operating
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF10N60Z
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4
1000
1.0
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
Duty Cycle = 50%
1 20%
10%
5%
0.1
2%
1%
0.01
Single Pulse Simulation
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 12. Thermal Impedance for NDF10N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
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5
100
1000
NDF10N60Z, NDP10N60Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
−T−
F
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
TO−220AB
CASE 221A−09
ISSUE AE
B
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
N
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NDF10N60Z/D