NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested ROHS Compliant This is a Pb−Free Device • • • • Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts http://onsemi.com Applications VDSS RDS(ON) (TYP) @ 5 A 600 V 0.65 Ω N−Channel D (2) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage VDSS 600 (Note 1) V Continuous Drain Current ID 10 (Note 2) A Continuous Drain Current TA = 100°C ID 5.7 (Note 2) A IDM 36 (Note 2) A Pulsed Drain Current, VGS @ 10 V NDF10N60Z NDP10N60Z Power Dissipation (Note 1) PD Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, L = 6.0 mH, ID = 10 A EAS 300 mJ ESD (HBM) (JESD 22−114−B) Vesd RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) VISO Peak Diode Recovery dv/dt 4.5 (Note 3) V/ns Continuous Source Current (Body Diode) IS 10 A Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s TL TPKG 300 260 °C TJ, Tstg −55 to 150 °C Operating Junction and Storage Temperature Range 36 125 Unit May, 2009 − Rev. 1 S (3) TO−220FP CASE 221D STYLE 1 MARKING DIAGRAM W 3900 NDF10N60ZG or NDP10N60ZG AYWW V 4500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu 2. Limited by maximum junction temperature 3. IS ≤ 10 A, di/dt ≤ 200 A/ms, VDD = 80% BVDSS © Semiconductor Components Industries, LLC, 2009 G (1) 1 Gate Source TO−220AB CASE 221A STYLE 5 Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NDF10N60ZG TO−220FP 50 Units/Rail NDP10N60ZG TO−220AB In Development Publication Order Number: NDF10N60Z/D NDF10N60Z, NDP10N60Z THERMAL RESISTANCE Symbol NDF10N60Z NDP10N60Z Unit Junction−to−Case (Drain) Parameter RqJC 3.4 1.0 °C/W Junction−to−Ambient Steady State (Note 4) RqJA 50 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min VGS = 0 V, ID = 1 mA BVDSS 600 Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current 25°C VDS = 600 V, VGS = 0 V Gate−to−Source Forward Leakage V 0.6 IDSS V/°C 1 150°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 5.0 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 250 mA VGS(th) VDS = 15 V, ID = 10 A gFS 7.9 S Ciss 1425 pF Coss 150 Crss 35 Qg 47 ±10 mA 0.75 W 4.5 V ON CHARACTERISTICS (Note 5) Forward Transconductance 0.65 3.0 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge VDD = 300 V, ID = 10 A, VGS = 10 V Gate Resistance nC Qgs 9.0 Qgd 26 Rg 1.5 W td(on) 15 ns tr 31 td(off) 40 tf 23 RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 300 V, ID = 10 A, VGS = 10 V, RG = 5 Ω Fall Time SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 10 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 10 A, di/dt = 100 A/ms trr 395 ns Qrr 3.0 mC Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 1.6 V NDF10N60Z, NDP10N60Z TYPICAL CHARACTERISTICS 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 V 7.0 V 14 6.4 V 12 6.2 V 10 6.0 V 8 5.8 V 6 5.6 V 5.4 V 4 4 8 12 16 20 24 14 12 10 8 TJ = 150°C 6 4 TJ = −55°C 2 5 6 7 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.75 0.70 ID = 5 A 0.65 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 8 0.80 TJ = 25°C VGS = 10 V 0.75 0.70 0.65 0.60 2.5 5.0 7.5 10 12.5 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.7 10,000 VGS = 0 V VGS = 10 V ID = 5 A IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 2.2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.80 0.60 TJ = 25°C 16 2 0 5.0 V 0 VDS = 30 V 18 6.6 V ID, DRAIN CURRENT (A) 16 2 0 20 VGS = 15 V TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 18 TJ = 150°C 1000 1.7 1.2 100 TJ = 100°C 0.7 0.2 −50 −25 0 25 50 75 100 125 150 10 0 100 200 300 400 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 600 NDF10N60Z, NDP10N60Z TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C 3000 2000 1000 0 Crss Coss 0 25 300 VDS QT 10 Ciss 500 ID = 10 A TJ = 25°C 15 2500 1500 400 50 75 100 125 150 175 200 Qgs Qgd 0 0 5 10 IS, SOURCE CURRENT (A) tr tf td(on) 10 25 30 35 40 45 50 0 55 8 6 4 2 0 100 VGS = 0 V TJ = 25°C 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Source Current vs. Forward Voltage 100 ID, DRAIN CURRENT (A) t, TIME (ns) 10 VDD = 300 V ID = 10 A VGS = 10 V 1 20 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(off) 10 15 100 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 VGS 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 200 VGS = 10 V Single Pulse TC = 25°C 10 1 ms 100 ms 10 ms 1 10 ms 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 3500 Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating dc 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF10N60Z http://onsemi.com 4 1000 1.0 NDF10N60Z, NDP10N60Z TYPICAL CHARACTERISTICS 10 R(t) (°C/W) Duty Cycle = 50% 1 20% 10% 5% 0.1 2% 1% 0.01 Single Pulse Simulation 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 12. Thermal Impedance for NDF10N60Z LEADS HEATSINK 0.110″ MIN Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. http://onsemi.com 5 100 1000 NDF10N60Z, NDP10N60Z PACKAGE DIMENSIONS TO−220FP CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. −T− F T SEATING PLANE C S A U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE Y TO−220AB CASE 221A−09 ISSUE AE B INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. N MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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