NDF06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VDSS (@ TJmax) RDS(ON) (MAX) @ 3 A 650 V 1.2 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit VDSS 600 V Continuous Drain Current, RqJC (Note 1) ID 7.1 A Continuous Drain Current TA = 100°C, RqJC (Note 1) ID 4.5 A IDM 28 A Rating Drain−to−Source Voltage Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC PD 35 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, L = 6.3 mH, ID = 6.0 A EAS 113 mJ ESD (HBM) (JESD22−A114) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 6.0 A Maximum Temperature for Soldering Leads TL 260 °C TJ, Tstg −55 to 150 °C Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 8 1 N−Channel D (2) G (1) S (3) 1 2 3 NDF06N60ZG, NDF06N60ZH TO−220FP CASE 221AH ORDERING AND MARKING INFORMATION See detailed ordering, marking and shipping information on page 6 of this data sheet. Publication Order Number: NDF06N60Z/D NDF06N60Z THERMAL RESISTANCE Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 3.6 °C/W Junction−to−Ambient Steady State (Note 3) RqJA 50 3. Insertion mounted ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 600 Breakdown Voltage Temperature Coefficient Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Leakage Current V 0.6 V/°C IDSS 1 VGS = ±20 V IGSS ±10 mA Static Drain−to−Source On−Resistance VGS = 10 V, ID = 3.0 A RDS(on) 0.98 1.2 W Gate Threshold Voltage VDS = VGS, ID = 100 mA VGS(th) 3.9 4.5 V VDS = 15 V, ID = 3.0 A gFS VDS = 600 V, VGS = 0 V Gate−to−Source Forward Leakage 25°C 150°C mA 50 ON CHARACTERISTICS (Note 4) Forward Transconductance 3.0 5.0 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) Ciss 738 923 1107 Coss 90 106 125 Crss 15 23 30 Total Gate Charge (Note 5) Qg 15.5 31 47 Gate−to−Source Charge (Note 5) Qgs 3 6.3 9.5 Qgd 8 17 24.5 Output Capacitance (Note 5) Reverse Transfer Capacitance (Note 5) Gate−to−Drain (“Miller”) Charge (Note 5) VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 300 V, ID = 6.0 A, VGS = 10 V pF nC Plateau Voltage VGP 6.4 V Gate Resistance Rg 3.2 W td(on) 13 ns tr 17 td(off) 30 tf 28 RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 5 Ω Fall Time SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 6.0 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 6.0 A, di/dt = 100 A/ms trr 338 ns Qrr 2.0 mC Reverse Recovery Charge 1.6 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 5. Guaranteed by design. www.onsemi.com 2 NDF06N60Z TYPICAL CHARACTERISTICS 10 12 6.8 V VDS ≥ 30 V 6.6 V VGS = 15 V 8 6.4 V 6 6.2 V 6.0 V 4 5.8 V 2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 V 7V 5.6 V 0 5 10 15 20 8 6 25 TJ = 150°C 4 2 TJ = −55°C 3 6 5 7 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.5 1 0.5 5 6 7 8 9 10 VGS (V) 8 1.75 TJ = 25°C 1.5 1.25 VGS = 10 V 1 0.75 0.5 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.6 10,000 VGS = 0 V ID = 3 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 3 A TJ = 25°C 2.2 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2 0 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TJ = 25°C ID, DRAIN CURRENT (A) 12 1.8 1.4 1.0 TJ = 150°C 1000 100 0.6 TJ = 100°C 0.2 −50 −25 0 25 50 75 100 125 150 10 0 100 200 300 400 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 600 NDF06N60Z TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C f = 1 MHz 1500 Crss 0 0 VDS 50 100 150 200 200 Qgs VGS 0 100 TJ = 25°C ID = 6 A 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0 35 IS, SOURCE CURRENT (A) 6 VDD = 300 V ID = 6 A VGS = 10 V td(off) 100 tr tf td(on) 10 1 10 VGS = 0 V TJ = 25°C 5 4 3 2 1 0 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (A) t, TIME (ns) Qgd 5 1000 1 300 10 Coss 500 QT 15 Ciss 1000 400 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 2000 10 VGS ≤ 30 V Single Pulse TC = 25°C 100 ms 1 ms 10 ms 10 ms dc 1 0.1 0.01 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF06N60Z www.onsemi.com 4 1000 NDF06N60Z TYPICAL CHARACTERISTICS 10 R(t) (C/W) 50% (DUTY CYCLE) 1.0 20% 10% 5.0% 2.0% 0.1 1.0% RqJC = 3.6°C/W Steady State SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1.0 10 PULSE TIME (s) Figure 12. Thermal Impedance for NDF06N60Z LEADS HEATSINK 0.110″ MIN Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 100 1000 NDF06N60Z ORDERING INFORMATION Package Shipping† NDF06N60ZG TO−220FP (Pb−Free, Halogen−Free) 50 Units / Rail NDF06N60ZH TO−220FP (Pb−Free, Halogen−Free) 50 Units / Rail Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS NDF06N60ZG or NDF06N60ZH AYWW Gate Source Drain TO−220FP A Y WW G, H = Location Code = Year = Work Week = Pb−Free, Halogen−Free Package www.onsemi.com 6 NDF06N60Z PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A E B P E/2 0.14 Q D M B A A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE b2 c b 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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