IRFH7085 Data Sheet (503 KB, EN)

StrongIRFET™
IRFH7085PbF
HEXFET® Power MOSFET
Application
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 DC/DC converters
 DC/AC Inverters
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant VDSS
60V
RDS(on) typ.
2.6m
max
3.2m
ID (Silicon Limited)
147A
ID (Package Limited)
100A
PQFN 5X6 mm
Base part number
Standard Pack
Form
Quantity
Tape and Reel
4000
Package Type
PQFN 5mm x 6mm
8.0
150
7.0
Limited By Package
125
6.0
T J = 125°C
5.0
4.0
T J = 25°C
3.0
100
75
50
25
2.0
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
IRFH7085TRPbF
ID = 75A
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
IRFH7085PbF
Orderable Part Number
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© 2015 International Rectifier
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFH7085PbF
Absolute Maximum Rating
Symbol
Parameter
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics Symbol
Parameter
EAS (Thermally limited)
Single Pulse Avalanche Energy 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
Avalanche Current 
IAR
Repetitive Avalanche Energy 
EAR
Thermal Resistance
Parameter
Junction-to-Case 
RJC (Bottom)
Junction-to-Case 
RJC (Top)
Junction-to-Ambient 
RJA
Junction-to-Ambient
RJA (<10s)
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
RG
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
43
2.6
3.6
–––
–––
–––
–––
–––
1.4
Max.
–––
–––
3.2
–––
3.7
1.0
150
100
-100
–––
Max.
23
147
93
100
590
156
1.25
± 20
Units
A A W
W/°C
V
-55 to + 150 °C Max.
319
554
Units
mJ
See Fig 15, 16, 23a, 23b Typ.
0.5
–––
–––
–––
Units
V
mV/°C
m

V
µA
nA
Max.
0.8
20
34
22
A
mJ
Units
°C/W
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 75A 
VGS = 6.0V, ID = 38A 
VDS = VGS, ID = 150µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ = 125°C
VGS = 20V
VGS = -20V

Notes:
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 113µH, RG = 50, IAS = 75A, VGS = 10V.
ISD  75A, di/dt  1280A/µs, VDD  V(BR)DSS, TJ 150°C.
Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V.
 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFH7085PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Min.
140
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S VDS = 10V, ID = 75A
110 165
ID = 75A
VDS = 30V
30
–––
nC VGS = 10V
36
–––
74
–––
13
–––
VDD = 30V
tr
Rise Time
–––
25
–––
td(off)
Turn-Off Delay Time
–––
63
–––
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
23
6460
560
380
–––
–––
–––
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
570
–––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Output Capacitance (Time Related)
–––
715
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
––– 147
–––
–––
590
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt 
–––
3.0
–––
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–––
–––
–––
–––
31
30
39
33
–––
–––
–––
–––
IRRM
Reverse Recovery Current
–––
1.9
–––
ns
ID = 30A
RG = 2.7
VGS = 10V
Diode Characteristics Symbol
IS
ISM
3
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A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
TJ = 25°C,IS = 75A,VGS = 0V 
V/ns TJ = 150°C,IS = 75A,VDS = 60V
TJ = 25°C
TJ = 125°C
TJ = 25°C
nC
TJ = 125°C
ns
A
TJ = 25°C
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VDD = 51V
IF = 75A,
di/dt = 100A/µs 

March 17, 2015
IRFH7085PbF
10000
1000
1000
BOTTOM
100
10
1
100
BOTTOM
10
4.3V
60µs PULSE WIDTH
60µs PULSE WIDTH
4.0V
Tj = 25°C
0.1
0.1
1
Tj = 150°C
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.4
100
T J = 150°C
T J = 25°C
10
VDS = 25V
60µs PULSE WIDTH
1.0
ID = 75A
VGS = 10V
2.0
1.6
1.2
0.8
0.4
3
4
5
6
7
8
-60 -40 -20 0
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
Ciss
Coss
Crss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
ID= 75A
12.0
VDS= 48V
VDS= 30V
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
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0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFH7085PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 150°C
100
10
T J = 25°C
1msec
100
Limited by
package
10
OPERATION
IN THIS
AREA
LIMITED BY
R DS(on)
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
DC
0.01
1.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.1
1
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
1.2
76
Id = 1.0mA
1.0
72
0.8
Energy (µJ)
74
70
0.6
68
0.4
66
0.2
64
0.0
-60 -40 -20 0
0
20 40 60 80 100 120 140 160
10
20
30
40
50
60
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
RDS(on), Drain-to -Source On Resistance ( m )
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100µsec
70
3.4
VGS = 6.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
3.2
3.0
2.8
2.6
2.4
2.2
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFH7085PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 75A
160
120
80
40
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav Submit Datasheet Feedback
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IRFH7085PbF
12
4.0
10
IF = 45A
V R = 51V
TJ = 25°C
3.5
8
TJ = 125°C
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
4.5
3.0
ID
ID
ID
ID
2.5
2.0
= 150µA
= 250µA
= 1.0mA
= 1.0A
6
4
2
1.5
0
-75 -50 -25
0
25
50
75 100 125 150
0
200
T J , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
12
200
IF = 75A
V R = 51V
10
IF = 45A
V R = 51V
TJ = 25°C
160
TJ = 25°C
TJ = 125°C
TJ = 125°C
QRR (nC)
8
IRRM (A)
400
6
120
80
4
40
2
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
400
600
800
1000
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
200
IF = 75A
V R = 51V
QRR (nC)
160
TJ = 25°C
TJ = 125°C
120
80
40
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
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IRFH7085PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFH7085PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFH7085PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
Bo
Ko
W
P1
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFH7085PbF
Qualification Information† Industrial
(per JEDEC JESD47F †† guidelines )
Qualification level
Moisture Sensitivity Level
PQFN 5mm x 6mm
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
†
††
MSL1
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
11/7/2014



Added EAS (L =1mH) = 554mJ on page 2
Added note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V”. on page 2
Added Pd @ Tc = 25°C on Absolute Max Rating table on page 2
3/17/2015

Updated package outline and tape and reel on pages 9 and 10.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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