IRFH7084 Data Sheet (709 KB, EN)

StrongIRFET™
IRFH7084PbF
HEXFET® Power MOSFET
Application
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 DC/DC converters
 DC/AC Inverters
VDSS
40V
RDS(on) typ.
0.95m
1.25m
max
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant 



ID (Silicon Limited)
265A
ID (Package Limited)
100A
PQFN 5X6 mm
Base part number
Standard Pack
Form
Quantity
Tape and Reel
4000
Package Type
PQFN 5mm x 6mm
ID = 100A
5
Limited by package
240
4
3
2
TJ = 125°C
1
180
120
60
TJ = 25°C
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
IRFH7084TRPbF
300
6
ID, Drain Current (A)
RDS (on), Drain-to -Source On Resistance (m)
IRFH7084PbF
Orderable Part Number
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0
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFH7084PbF
Absolute Maximium Rating
Symbol
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Linear Derating Factor
Max Power Dissipation
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
40
265
170
100
400
1.25
156
Units
A A W/°C
± 20
V
-55 to + 150 Avalanche Characteristics EAS (Thermally limited)
Single Pulse Avalanche Energy 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
IAR
Avalanche Current 
EAR
Repetitive Avalanche Energy 
°C 185
431
mJ
See Fig 14, 15, 23a,
A
mJ
Thermal Resistance
Parameter
Junction-to-Case 
Junction-to-Case
Junction-to-Ambient 
Junction-to-Ambient 
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
RG
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Typ.
0.5
–––
–––
–––
Max.
0.8
21
35
20
Units
°C/W
Min. Typ. Max. Units
Conditions
40
––– –––
V VGS = 0V, ID = 250µA
––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.95 1.25 m VGS = 10V, ID = 100A 
2.2 –––
3.9
V VDS = VGS, ID = 150µA
––– –––
1.0
VDS =40 V, VGS = 0V
µA
––– ––– 150
VDS =40V,VGS = 0V,TJ =125°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
–––
1.4
–––

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.037mH, RG = 50, IAS = 100A, VGS =10V.
ISD  100A, di/dt  994A/µs, VDD  V(BR)DSS, TJ 150°C.
Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V.
 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFH7084PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
120
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S VDS = 10V, ID =100A
127 190
ID = 100A
35
–––
VDS = 20V
nC 41
–––
VGS = 10V
195 –––
16
–––
VDD = 20V
ID = 30A
31
–––
ns
64
–––
RG= 2.7
VGS = 10V
34
–––
td(off)
Turn-Off Delay Time
–––
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
6560
940
650
–––
–––
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
1120
–––
Coss eff.(TR)
Output Capacitance (Time Related)
–––
1300
–––
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ. Max. Units
–––
––– 100
–––
–––
400
VSD
Diode Forward Voltage
–––
–––
1.3
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
4.5
36
37
38
40
1.7
–––
–––
–––
–––
–––
–––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.5
pF VGS = 0V, VDS = 0V to 32V
See Fig.11
VGS = 0V, VDS = 0V to 32V
Diode Characteristics Symbol
IS
ISM
3
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A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
TJ = 25°C,IS = 100A,VGS = 0V 
V/ns TJ = 150°C,IS =100A,VDS = 40V
TJ = 25°C
VDD = 34V
ns
TJ = 125°C
IF = 100A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
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IRFH7084PbF
10000
10000
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
4.0V
 60µs PULSE WIDTH
Tj = 25°C
1000
BOTTOM
100
4.0V
10
 60µs PULSE WIDTH
Tj = 150°C
1
0.1
0.1
1
10
0.1
100
100
1.8
1000
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 10V
 60µs PULSE WIDTH
0.1
ID = 100A
VGS = 10V
1.6
1.4
(Normalized)
RDS(on) , Drain-to-Source On Resistance
10000
ID, Drain-to-Source Current (A)
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1.2
1.0
0.8
0.6
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
40
60
80 100 120 140 160
14
VGS, Gate-to-Source Voltage (V)
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1000
20
Fig 6. Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
10000
0
TJ , Junction Temperature (°C)
Fig 5. Typical Transfer Characteristics
C, Capacitance (pF)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
ID= 100A
12
VDS = 32V
VDS = 20V
10
8
6
4
2
0
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
7.0V
6.0V
5.0V
4.5V
4.3V
4.0V
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0
40
80
120
160
QG Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFH7084PbF
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
10000
TJ = 150°C
100
TJ = 25°C
10
1
100µsec
100
Package
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
DC
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
VSD , Source-to-Drain Voltage (V)
1
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.9
49
Id = 1.0mA
0.8
47
0.7
46
0.6
Energy (µJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
10msec
1
VGS = 0V
48
1msec
Limited by
45
44
0.5
0.4
0.3
43
0.2
42
0.1
41
0.0
40
-60 -40 -20 0
0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
20
30
40
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to–Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (m)
10
VDS, Drain-to-Source Voltage (V)
2.0
1.8
VGS = 6.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
1.6
1.4
1.2
1.0
0.8
0.6
0
40
80
120
160
200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFH7084PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
EAR , Avalanche Energy (mJ)
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
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IRFH7084PbF
VGS(th) Gate threshold Voltage (V)
4.5
12
4.0
IF = 60A
V R = 34V
10
3.5
TJ = 25°C
TJ = 125°C
IRRM (A)
8
3.0
ID = 150µA
ID = 1.0mA
2.5
6
4
ID = 1.0A
2.0
2
1.5
-75
-50
-25
0
25
50
75
100
125
0
150
0
200
T J , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
240
12
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
10
160
6
120
4
80
2
40
0
0
0
200
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
200
QRR (nC)
8
IRRM (A)
400
400
600
800
0
1000
200
400
600
800
1000
di F /dt (A/µs)
di F /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
240
IF = 100A
VR = 34V
TJ = 25°C
TJ = 125°C
200
QRR (nC)
160
120
80
40
0
0
200
400
600
800
1000
di F /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
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IRFH7084PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFH7084PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFH7084PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
Bo
Ko
W
P1
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFH7084PbF
Qualification information†
Industrial††
Qualification level
(per JEDEC JESD47F †† guidelines )
Moisture Sensitivity Level
MSL1
PQFN 5mmx 6mm
RoHS compliant
(per JEDEC J-STD-020D†† )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
10/16/2014

03/05/2015
Updated EAS (L =1mH) = 431mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V” on page 2
3/19/2015

Add Pd at tc=25C on Absolute Max Rating table on page 2
Updated package outline on page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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