StrongIRFET™ IRFS7430-7PPbF Application Brushed Motor drive applications BLDC Motor drive applications PWM Inverterized topologies Battery powered circuits Half-bridge and full-bridge topologies Electronic ballast applications Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters HEXFET® Power MOSFET VDSS 40V RDS(on) typ. 0.55m 0.75m D max G S ID (Silicon Limited) 522A ID (Package Limited) 240A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G Gate Package Type IRFS7430-7PPbF D2Pak-7Pin Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 4.0 Orderable Part Number IRFS7430-7PPbF IRFS7430TRL7PP Limited By Package 500 3.0 2.0 TJ = 125°C 1.0 400 300 200 100 TJ = 25°C 0.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 S Source 600 ID = 100A ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) Base part number D Drain www.irf.com © 2014 International Rectifier 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Max. 522 369 240 1200* 375 2.5 ± 20 A W W/°C V -55 to + 175 °C 300 764 1454 mJ See Fig 15, 16, 23a, 23b A mJ Typ. ––– ––– Min. 40 ––– ––– ––– 2.2 ––– ––– ––– ––– ––– Units Max. 0.4 40 Units °C/W Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 26 ––– mV/°C Reference to 25°C, ID = 2mA 0.55 0.75 VGS = 10V, ID = 100A m 0.93 ––– VGS = 6V, ID = 50A 3.0 3.9 V VDS = VGS, ID = 250µA ––– 1.0 VDS =40 V, VGS = 0V µA ––– 150 VDS =40V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 2.2 ––– Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 153µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1403A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf *Pulse drain current is limited at 960A by source bonding technology. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 176 ––– ––– ––– ––– ––– ––– Typ. ––– 305 84 96 209 28 79 td(off) Turn-Off Delay Time ––– 161 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– 93 ––– 13975 ––– 2140 ––– 1438 Coss eff.(ER) Max. Units Conditions ––– S VDS = 10V, ID =100A 460 ID = 100A ––– VDS = 20V nC ––– VGS = 10V ––– ––– VDD = 20V ID = 30A ––– ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.7 pF VGS = 0V, VDS = 0V to 32V See Fig.11 VGS = 0V, VDS = 0V to 32V ––– 2620 ––– ––– 3306 ––– Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 522 ––– ––– 1200* VSD Diode Forward Voltage ––– 0.8 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 1.6 50 58 59 72 2.2 ––– ––– ––– ––– ––– ––– Coss eff.(TR) Diode Characteristics Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 100A,VGS = 0V V/ns TJ = 175°C,IS =100A,VDS = 40V TJ = 25°C VDD = 34V ns TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 BOTTOM 100 4.5V 1 4.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 TJ = 175°C 100 TJ = 25°C 10 1 VDS = 10V 60µs PULSE WIDTH 0.1 ID = 100A VGS = 10V 1.6 1.2 0.8 0.4 2 3 4 5 6 7 8 -60 -20 Fig 5. Typical Transfer Characteristics 1000000 100 140 180 Fig 6. Normalized On-Resistance vs. Temperature VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd Ciss 10000 60 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 100000 20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current(A) 1 VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Coss Crss 1000 ID = 100A 12.0 VDS = 32V VDS = 20V 10.0 8.0 6.0 4.0 2.0 0.0 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2014 International Rectifier 0 50 100 150 200 250 300 350 400 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF 10000 TJ = 175°C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 DC 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 2.5 48 Id = 2.0mA 47 2.0 46 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 1msec Limited by Package 45 44 1.5 1.0 43 42 0.5 41 0.0 40 -60 -20 20 60 100 140 -5 180 5 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Fig 12. Typical Coss Stored Energy Fig 11. Drain-to–Source Breakdown Voltage RDS (on), Drain-to -Source On Resistance (m) 0 10.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 8.0 6.0 4.0 2.0 0.0 0 100 200 300 400 500 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width 800 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A EAR , Avalanche Energy (mJ) 700 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF 4.5 16 4.0 14 IF = 60A VR = 34V TJ = 25°C TJ = 125°C 12 3.5 IRRM (A) VGS(th), Gate threshold Voltage (V) 3.0 2.5 ID = 250µA ID = 1.0mA ID = 1.0A 2.0 10 8 6 4 1.5 2 1.0 0 -75 -25 25 75 125 175 225 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 14 700 12 IF = 100A VR = 34V 600 IF = 60A VR = 34V 10 TJ = 25°C TJ = 125°C 500 TJ = 25°C TJ = 125°C QRR (nC) IRRM (A) 400 8 6 400 300 200 4 100 2 0 0 200 400 600 800 1000 0 200 diF /dt (A/µs) 400 600 800 1000 diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 450 IF = 100A VR = 34V 400 TJ = 25°C TJ = 125°C QRR (nC) 350 300 250 200 150 100 50 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF D2Pak-7Pin Part Marking Information D2Pak-7Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFS7430-7PPbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) †† D2Pak-7Pin Moisture Sensitivity Level MSL1 Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/6/2014 Comments Updated EAS (L =1mH) = 1454mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V”. on page 2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014