MUN5336DW1 Complementary Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. http://onsemi.com PIN CONNECTIONS (3) (2) R1 (1) R2 Q1 Features • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Q2 R2 (4) R1 (5) (6) MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Collector Current − Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device MUN5336DW1T1G Package Shipping† SOT−363 3,000 / Tape & Reel 6 SOT−363 CASE 419B 36 M G G 1 36 M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 0 1 Publication Order Number: DTC115EP/D MUN5336DW1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 187 256 1.5 2.0 mW MUN5336DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) PD RqJA mW/°C 670 490 °C/W 250 385 2.0 3.0 mW MUN5336DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Thermal Resistance, Junction to Lead (Note 1) (Note 2) Junction and Storage Temperature Range PD RqJA RqJL TJ, Tstg 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. http://onsemi.com 2 493 325 188 208 −55 to +150 mW/°C °C/W °C/W °C MUN5336DW1 ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Symbol Characteristic Min Typ Max − − 100 − − 500 − − 0.05 50 − − 50 − − 80 150 − − − 0.25 − − 1.2 1.2 0.5 0.5 3.0 3.0 1.7 1.6 − − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = 5.0 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (Note 4) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) (NPN) (VCE = 5.0 V, IC = 100 mA) (PNP) Vi(off) Input Voltage (On) (VCE = 0.3 V, IC = 3.0 mA) (NPN) (VCE = 0.3 V, IC = 3.0 mA) (PNP) Vi(on) Output Voltage (On) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) VOL Output Voltage (Off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Input Resistor R1 70 100 130 Resistor Ratio R1/R2 0.8 1.0 1.2 V Vdc Vdc Vdc Vdc kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (mW) 400 350 300 (1) 250 (1) SOT−363; 1.0 × 1.0 Inch Pad 200 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 3 MUN5336DW1 1000 1 VCE = 10 V IC/IB = 10 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS MUN5336DW1 − NPN 25°C 75°C 0.1 0.01 75°C TA = −25°C 100 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 10 40 10 1 IC, COLLECTOR CURRENT (mA) 0.1 Figure 2. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) TA = −25°C 10 25°C 1 0.1 50 75°C VO = 5 V 0 Figure 4. Output Capacitance VO = 0.2 V 5 10 15 20 25 30 Vin, INPUT VOLTAGE (V) 25°C TA = −25°C 75°C 10 1 0.1 0 5 35 Figure 5. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) f = 10 kHz lE = 0 A TA = 25°C 2.8 100 Figure 3. DC Current Gain 3.6 3.2 25°C 10 20 15 25 IC, COLLECTOR CURRENT (mA) 30 Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 35 40 MUN5336DW1 TYPICAL CHARACTERISTICS MUN5336DW1 − PNP 1000 IC/IB = 10 150°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 10 1 25°C 150°C 0.1 −55°C 10 −55°C 0.01 0 VCE = 10 V 10 20 30 40 1 50 1 100 Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 8 6 4 2 10 20 30 40 −55°C 10 25°C 1 0.1 VO = 5 V 0.01 50 150°C 0 4 8 12 16 20 24 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) 0 10 IC, COLLECTOR CURRENT (mA) 10 0 0.1 IC, COLLECTOR CURRENT (mA) 12 Cob, OUTPUT CAPACITANCE (pF) 100 25°C −55°C 25°C 10 150°C 1 0.1 VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 50 28 MUN5336DW1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D A D 6 5 GAGE PLANE 4 2 L L2 E1 E 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. H DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X ddd TOP VIEW C A-B D M A2 DETAIL A A 6X ccc C DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b A1 SIDE VIEW C SEATING PLANE END VIEW c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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