NTJD5121N, NVJD5121N Power MOSFET 60 V, 295 mA, Dual N−Channel with ESD Protection, SC−88 Features • • • • • • Low RDS(on) Low Gate Threshold Low Input Capacitance ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device www.onsemi.com V(BR)DSS RDS(on) MAX ID Max 1.6 W @ 10 V 295 mA 60 V 2.5 W @ 4.5 V SC−88 (SOT−363) Applications • Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Symbol Value Unit VDSS 60 V VGS ±20 V ID 295 mA Steady State TA = 25°C TA = 85°C 212 t≤5s TA = 25°C 304 TA = 85°C 219 Steady State TA = 25°C PD t≤5s Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 mW 250 1 266 IDM 900 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 210 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Gate−Source ESD Rating (HBM) ESDHBM 2000 V Gate−Source ESD Rating (MM) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SC−88/SOT−363 CASE 419B STYLE 26 XX M G 6 XX M G G 1 S1 G1 D2 = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information ion page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State RqJA 467 °C/W Junction−to−Ambient – t ≤ 5 s RqJA 412 Junction−to−Lead – Steady State RqJL 252 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 9 1 Publication Order Number: NTJD5121N/D NTJD5121N, NVJD5121N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V 92 mV/°C TJ = 25°C 1.0 TJ = 125°C 500 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA Gate−to−Source Leakage Current V ±10 mA mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS Gate Resistance RG 1.0 1.7 2.5 4.0 V mV/°C W VGS = 10 V, ID = 500 mA 1.0 1.6 VGS = 4.5 V, ID = 200 mA 1.2 2.5 VDS = 5 V, ID = 200 mA 80 S 536 W 26 pF CHARGES AND CAPACITANCES CISS Input Capacitance VGS = 0 V, f = 1.0 MHz, VDS = 20 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 2.5 Total Gate Charge QG(TOT) 0.9 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.28 td(on) 22 VGS = 4.5 V, VDS = 25 V, ID = 200 mA 4.4 nC 0.2 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 25 V, ID = 200 mA, RG = 25 W tf ns 34 34 32 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.8 TJ = 85°C 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTJD5121N, NVJD5121N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.6 VDS ≥ 10 V 1 4.5 V 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 TJ = 25°C VGS = 10 5V 4V 4.2 V 3.8 V 2.4 V 3.6 V 0.8 3.4 V 2.2 V 3.2 V 3V 2.8 V 2.6 V 0.4 0 0.4 25°C 0.2 TJ = 125°C −55°C 1 2 3 4 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 85°C TJ = 25°C TJ = −55°C 0.8 0.4 0 0 4 Figure 2. Transfer Characteristics TJ = 125°C 1.2 3 Figure 1. On−Region Characteristics VGS = 4.5 V 1.6 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.4 2 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 5 2.4 VGS = 10 V 2 TJ = 125°C 1.6 TJ = 85°C 1.2 TJ = 25°C 0.8 TJ = −55°C 0.4 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Temperature 2.4 1.8 ID = 500 mA 2 1.6 4.5 V 1.2 10 V ID = 200 mA RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.6 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.8 ID = 0.2 A VGS = 4.5 V and 10 V 1.6 1.4 1.2 1 0.8 0.6 0.8 2 4 6 8 10 −50 −25 0 25 50 75 100 125 150 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance versus Gate−to−Source Voltage Figure 6. On−Resistance Variation with Temperature www.onsemi.com 3 NTJD5121N, NVJD5121N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS, GATE−TO−SOURCE VOLTAGE (V) 40 C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V 30 Ciss 20 Coss 10 Crss 0 0 4 8 12 16 5 ID = 0.2 A TJ = 25°C VDD = 25 V 4 3 2 1 0 0 20 0.2 DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.1 TJ = 85°C TJ = 25°C 0.01 0.6 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.2 VGS, GATE−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) VGS = 0 V 2.5 2.4 ID = 250 mA 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 −50 −25 0 0.8 1 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 10. Threshold Voltage with Temperature Figure 9. Diode Forward Voltage vs. Current r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 0.6 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1 0.4 0.4 Qg, TOTAL GATE CHARGE (nC) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME t,(s) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 NTJD5121N, NVJD5121N Table 1. ORDERING INFORMATION Part Number Marking (XX) Package Shipping† NTJD5121NT1G TF SC−88 (Pb−Free) 3000 / Tape & Reel NTJD5121NT2G TF SC−88 (Pb−Free) 3000 / Tape & Reel NVJD5121NT1G VTF SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTJD5121N, NVJD5121N PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D A D 6 5 GAGE PLANE 4 L L2 E1 E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. H DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b ddd TOP VIEW M A2 C A-B D DETAIL A A 6X ccc C A1 SIDE VIEW C SEATING PLANE c END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTJD5121N/D