ONSEMI SMUN5311DW1T1G

MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1GSeries
Dual Bias Resistor
Transistors
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NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the
MUN5311DW1T1G series, two complementary BRT devices are
housed in the SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
Features
•
•
•
•
•
•
SOT−363
CASE 419B
STYLE 1
(3)
(2)
R1
Q1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for
Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
R2
Q2
R2
(4)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
(1)
R1
(5)
(6)
MARKING DIAGRAM
6
xx M G
G
1
xx
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
March, 2014 − Rev. 14
1
Publication Order Number:
MUN5311DW1T1/D
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Symbol
Total Device Dissipation
TA = 25°C
PD
Derate above 25°C
Thermal Resistance − Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Max
Unit
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Symbol
Max
Unit
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
PD
Derate above 25°C
mW/°C
Thermal Resistance − Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance − Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping†
MUN5311DW1T1G,
SMUN5311DW1T1G,
SMUN5311DW1T2G
SOT−363
(Pb−Free)
11
10
10
3,000 / Tape & Reel
MUN5312DW1T1G,
SMUN5312DW1T1G
SOT−363
(Pb−Free)
12
22
22
3,000 / Tape & Reel
MUN5313DW1T1G,
SMUN5313DW1T1G
SOT−363
(Pb−Free)
13
47
47
3,000 / Tape & Reel
MUN5314DW1T1G,
SMUN5314DW1T1G
SOT−363
(Pb−Free)
14
10
47
3,000 / Tape & Reel
MUN5315DW1T1G,
SMUN5315DW1T1G
SOT−363
(Pb−Free)
15
10
∞
3,000 / Tape & Reel
MUN5316DW1T1G
SOT−363
(Pb−Free)
16
4.7
∞
3,000 / Tape & Reel
MUN5330DW1T1G,
SMUN5330DW1T1G
SOT−363
(Pb−Free)
30
1.0
1.0
3,000 / Tape & Reel
MUN5331DW1T1G
SOT−363
(Pb−Free)
31
2.2
2.2
3,000 / Tape & Reel
MUN5332DW1T1G,
NSVMUN5332DW1T1G
SOT−363
(Pb−Free)
32
4.7
4.7
3,000 / Tape & Reel
MUN5333DW1T1G,
NSVMUN5333DW1T1G
SOT−363
(Pb−Free)
33
4.7
47
3,000 / Tape & Reel
MUN5334DW1T1G,
NSVMUN5334DW1T1G
SOT−363
(Pb−Free)
34
22
47
3,000 / Tape & Reel
MUN5335DW1T1G,
SMUN5335DW1T1G,
SMUN5335DW1T2G
SOT−363
(Pb−Free)
35
2.2
47
3,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
IEBO
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
50
−
−
50
−
−
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
hFE
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(IC = 10 mA, IB = 5 mA)
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
(IC = 10 mA, IB = 1 mA)
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
VCE(sat)
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3
Vdc
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
−
−
−
−
0.25
0.25
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MUN5313DW1T1G, SMUN5313DW1T1G
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN5330DW1T1G, SMUN5330DW1T1G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
VOH
Input Resistor
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
R1
Resistor Ratio
MUN5311DW1T1G/SMUN5311DW1T1G/MUN5312DW1T1G/
SMUN5312DW1T1G/MUN5313DW1T1G/SMUN5313DW1T1G
MUN5314DW1T1G/SMUN5314DW1T1G
MUN5315DW1T1G/SMUN5315DW1T1G/MUN5316DW1T1G
MUN5330DW1T1G/SMUN5330DW1T1G/MUN5331DW1T1G/
MUN5332DW1T1G/NSVMUN5332DW1T1G
MUN5333DW1T1G/NSVMUN5333DW1T1G
MUN5334DW1T1G/NSVMUN5334DW1T1G
MUN5335DW1T1G/SMUN5335DW1T1G
R1/R2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
0.2
Vdc
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
4.9
−
−
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
0.8
1.0
1.2
0.17
−
0.8
0.21
−
1.0
0.25
−
1.2
0.055
0.38
0.038
0.1
0.47
0.047
0.185
0.56
0.056
kW
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
ALL MUN5311DW1T1G SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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5
150
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G, SMUN5311DW1T1G
NPN TRANSISTOR
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
VO = 5 V
0.001
50
TA=-25°C
10
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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6
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G, SMUN5311DW1T1G
PNP TRANSISTOR
IC/IB = 10
TA=-25°C
0.1
25°C
75°C
0.01
0
20
25°C
100
-25°C
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
50
1
100
IC, COLLECTOR CURRENT (mA)
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=-25°C
10
1
0.1
0.01
0.001
50
VO = 5 V
0
Figure 9. Output Capacitance
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0
10
8
9
Figure 10. Output Current versus Input
Voltage
100
0.1
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75°C
10
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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7
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
NPN TRANSISTOR
IC/IB = 10
25°C
TA=-25°C
0.1
75°C
0.01
TA=75°C
25°C
-25°C
100
10
0.001
0
20
50
40
1
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3
2
1
75°C
25°C
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
Figure 14. Output Capacitance
2
0
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
VCE = 10 V
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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8
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
PNP TRANSISTOR
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0
20
IC, COLLECTOR CURRENT (mA)
40
10
1
50
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
TA=-25°C
10
1
0.1
0.01
0.001
50
Figure 19. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
9
Figure 20. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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9
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
NPN TRANSISTOR
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
Figure 24. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 25. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
http://onsemi.com
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
1000
TA=-25°C
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
25°C
75°C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1
100
0.6
0.4
0.2
0
0
-25°C
1
0.1
0.01
Figure 29. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 30. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 31. Input Voltage versus Output Current
http://onsemi.com
11
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G, SMUN5314DW1T1G
NPN TRANSISTOR
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
-25°C
150
100
50
0
80
1
2
4
6
Figure 32. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
-25°C
10
VO = 5 V
1
50
Figure 34. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 33. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 36. Input Voltage versus Output Current
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12
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G, SMUN5314DW1T1G
PNP TRANSISTOR
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10 V
160
25°C
140
-25°C
120
100
80
60
40
20
0
80
2
1
4
6
Figure 37. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=-25°C
75°C
1
0
10
8
10
Figure 40. Output Current versus Input Voltage
10
0.1
25°C
-25°C
1
50
Figure 39. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 38. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
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13
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 44. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 43. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G, SMUN5315DW1T1G
NPN TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
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14
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 49. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 48. DC Current Gain
4.5
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G, SMUN5315DW1T1G
PNP TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage versus Output Current
http://onsemi.com
15
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 54. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 55. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 53. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
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16
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
25°C
100
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 59. Output Capacitance
75°C
10
25°C
TA = −25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
100
Figure 58. DC Current Gain
4.5
4
VCE = 10 V
75°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage versus Output Current
http://onsemi.com
17
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G, SMUN5330DW1T1G
NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
25°C
TA = −25°C
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
10
75°C
10
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
100
25°C
1
TA = −25°C
0.1
0.01
0.001
100
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 65. Input Voltage versus Output Current
Figure 64. Output Current versus Input Voltage
http://onsemi.com
18
25
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G, SMUN5330DW1T1G
PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
75°C
10
25°C
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 68. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 69. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
4
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 70. Input Voltage versus Output Current
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19
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
1
30
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 71. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10 75°C
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 73. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 74. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 72. DC Current Gain
12
0
25°C
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 75. Input Voltage versus Output Current
http://onsemi.com
20
25
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 76. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 78. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 79. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
0
100
Figure 77. DC Current Gain
4.5
Cob, CAPACITANCE (pF)
25°C
75°C
10
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 80. Input Voltage versus Output Current
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21
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G, NSVMUN5332DW1T1G NPN
TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
TA = −25°C
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
8
6
4
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 83. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 84. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
12
10
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 85. Input Voltage versus Output Current
http://onsemi.com
22
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G, NSVMUN5332DW1T1G PNP
TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = −25°C
10
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 86. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 88. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 89. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 87. DC Current Gain
6
0
25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 90. Input Voltage versus Output Current
http://onsemi.com
23
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G, NSVMUN5333DW1T1G
NPN TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 91. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 93. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 94. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3
100
Figure 92. DC Current Gain
4
3.5
25°C
10
1
30
TA = −25°C
100
20
5
10
15
IC, COLLECTOR CURRENT (mA)
Figure 95. Input Voltage versus Output Current
http://onsemi.com
24
25
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G, NSVMUN5333DW1T1G
PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 96. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
7
6
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
0.1
TA = −25°C
0.01
0.001
50
Figure 98. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 99. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 97. DC Current Gain
8
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 100. Input Voltage versus Output
Current
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25
50
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G, NSVMUN5334DW1T1G
NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 101. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
1
0.1
TA = −25°C
0.01
0.001
50
75°C
10
VO = 5 V
0
Figure 103. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
Figure 104. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 102. DC Current Gain
3.5
0
25°C
10
1
50
TA = −25°C
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 105. Input Voltage versus Output
Current
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26
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
75°C
−25°C
0.01
0.001
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G, NSVMUN5334DW1T1G
PNP TRANSISTOR
0
5
25°C
10
15
25
20
IC, COLLECTOR CURRENT (mA)
30
75°C
100
TA = −25°C
25°C
10
1
1
Figure 106. VCE(sat) versus IC
10
IC, COLLECTOR CURRENT (mA)
Figure 107. DC Current Gain
http://onsemi.com
27
100
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G, SMUN5335DW1T1G
NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 108. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
6
4
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
75°C
VO = 5 V
0
Figure 110. Output Capacitance
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
Figure 111. Output Current versus Input
Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
8
100
Figure 109. DC Current Gain
12
10
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 112. Input Voltage versus Output
Current
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28
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G, SMUN5335DW1T1G
PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 113. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75°C
1
TA = −25°C
0.1
0.01
0.001
50
25°C
VO = 5 V
0
Figure 115. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
9
Figure 116. Output Current versus Input
Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3.5
100
Figure 114. DC Current Gain
4.5
4
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 117. Input Voltage versus Output
Current
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29
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
0.1
0.01
75°C
25°C
−25°C
IC/IB = 10
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR
1000
75°C
TA = −25°C
100
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 118. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = −25°C
1
VO = 5 V
0.1
60
0
1
2
3
4
TA = −25°C
VO = 0.2 V
75°C
0
2
6
7
8
9
Figure 121. Output Current versus Input
Voltage
10
1
5
Vin, INPUT VOLTAGE (VOLTS)
100
25°C
75°C
10
Figure 120. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 119. DC Current Gain
1.2
0
25°C
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 122. Input Voltage versus Output
Current
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30
20
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
75°C
75°C
25°C
0.1
0.01
0.001
0
VCE = 10 V
−25°C
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 123. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
1
25°C
TA = −25°C
0.1
0.01
0.001
50
75°C
10
VO = 5 V
0
Figure 125. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
1
25°C
VO = 0.2 V
0.1
0
9
Figure 126. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 124. DC Current Gain
5
0
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 127. Input Voltage versus Output
Current
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31
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1
TA = −25°C
75°C
0.1
25°C
0.01
IC/IB = 10
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 128. VCE(sat) versus IC
Figure 129. DC Current Gain
100
1.0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA = −25°C
10
25°C
1
0.1
0.01
0.001
60
75°C
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
Figure 131. Output Current versus Input
Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 130. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
1.2
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 132. Input Voltage versus Output
Current
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32
25
11
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
1000
1
IC/IB = 10
−25°C
75°C
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
75°C
100
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 133. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
4
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
1
TA = −25°C
0.1
0.01
0.001
50
75°C
10
VO = 5 V
0
Figure 135. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
10
75°C
1
25°C
VO = 0.2 V
0.1
0
9
Figure 136. Output Current versus Input
Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 134. DC Current Gain
5
0
25°C
10
1
50
VCE = 10 V
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 137. Input Voltage versus Output
Current
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33
50
10
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
e
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
DIM
A
A1
A3
b
C
D
E
e
L
HE
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
A3
C
A1
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
M
A
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
SOLDERING FOOTPRINT*
0.50
0.0197
L
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
SC−88/SC70−6/SOT−363
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MUN5311DW1T1/D