MV104 Silicon Tuning Diode Dual Voltage Variable Capacitance Diode This device is designed for FM tuning, general frequency control and tuning, or any top-- of-- the-- line application requiring back--to--back diode configurations for minimum signal distortion and detuning. http://onsemi.com Pin 1 A1 Features • High Figure of Merit -• • • • Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz Guaranteed Capacitance Range -- 37--42 pF @ VR = 3.0 Vdc Dual Diodes -- Save Space and Reduce Cost Monolithic Chip Provides Near Perfect Matching -Guaranteed ± 1.0% (Max) Over Specified Tuning Range This is a Pb--Free Device* Pin 2 C TO--92 CASE 29 STYLE 15 12 3 STRAIGHT LEAD BULK PACK MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 32 Vdc Forward Current IF 200 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 280 2.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg --55 to +150 °C Rating Pin 3 A2 MARKING DIAGRAM MV 104 AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MV104G Device MV104 © Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 5 Shipping† TO--92 (Pb--Free) 5000 Units / Bulk †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Package Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min Max Min Typ Min Max 37 42 100 140 2.5 2.8 1 Publication Order Number: MV104/D MV104 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current Symbol Min Typ Max Unit V(BR)R 32 -- -- Vdc IR --- --- 50 500 nAdc TCC -- 280 -- ppm/°C TA = 25°C (VR = 30 Vdc) TA = 60°C Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) TYPICAL CHARACTERISTICS (EACH DIODE) 550 70 Q, FIGURE OF MERIT C T , DIODE CAPACITANCE (pF) 100 40 20 450 350 250 TA = 25°C f = 100 MHz 150 10 0.3 1.0 2.0 3.0 5.0 7.0 10 VR, REVERSE VOLTAGE (VOLTS) 0.5 20 50 30 0 3.0 Figure 1. Diode Capacitance (Each Diode) VR = 3.0 Vdc TA = 25°C 500 200 100 50 20 10 20 30 50 70 100 1.02 4.0 V 1.01 1.00 30 V 0.99 NORMALIZED to CT at TA = 25°C 0.98 0.97 --50 --25 0 +25 TA = 125°C 20 10 5 TA = 75°C 2 1 0.5 0.2 0.1 TA = 25°C 0.05 5.0 +50 +75 +100 +125 Figure 4. Diode Capacitance versus Temperature 100 50 0 30 VR = 2.0 V 1.03 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Figure of Merit versus Frequency 0.02 0.01 27 1.04 0.96 --75 200 300 f, FREQUENCY (MHz) I R , REVERSE CURRENT (nA) Q, FIGURE OF MERIT 1000 9.0 15 21 12 18 24 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Figure of Merit versus Voltage C T , DIODE CAPACITANCE (NORMALIZED) 2000 6.0 15 10 20 VR, REVERSE VOLTAGE (VOLTS) 25 30 Figure 5. Reverse Current versus Reverse Voltage http://onsemi.com 2 MV104 PACKAGE DIMENSIONS TO--92 (TO--226) CASE 29--11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C 1 SECTION X--X N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 -----0.250 -----0.080 0.105 -----0.100 0.115 -----0.135 ------ MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 -----6.35 -----2.04 2.66 -----2.54 2.93 -----3.43 ------ N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X--X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 -----2.04 2.66 1.50 4.00 2.93 -----3.43 -----STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 http://onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MV104/D