NTSV30H100ECT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.471 V at IF = 5 A www.onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PIN CONNECTIONS 1 2, 4 3 4 TO−220AB CASE 221A STYLE 6 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • 1 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing Diodes Reverse Battery Protection Instrumentation 2 3 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal AY WW TSV30H10EG AKA Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 1 1 Publication Order Number: NTSV30H100ECT/D NTSV30H100ECT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 116°C) (Rated VR, TC = 136°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 109°C) (Rated VR, Square Wave, 20 kHz, TC = 133°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A 30 15 IFRM A 60 30 IFSM 125 A Operating Junction Temperature TJ −40 to +175 °C Storage Temperature Tstg −40 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Typical Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 1.4 47 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.544 0.606 0.761 − − 0.9 0.471 0.539 0.662 − − 0.73 1.7 2.1 − 5.0 Unit V mA mA 85 16 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSV30H100ECTG Package Shipping TO−220AB (Pb−Free) 50 Units / Rail www.onsemi.com 2 NTSV30H100ECT TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C 10 TA = 125°C TA = 25°C 1.0 TA = −40°C TA = 125°C 1.0 TA = 25°C TA = −40°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 1.E+00 1.E−01 TA = 150°C 1.E−02 TA = 150°C TA = 125°C 1.E−03 TA = 175°C 1.E−01 TA = 175°C 1.E−02 TA = 125°C 1.E−03 1.E−04 1.E−04 TA = 25°C 1.E−05 1.E−05 TA = 25°C 1.E−06 1.E−07 TA = 150°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 TA = 175°C 0 10 20 30 1.E−06 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 1.E−07 0 20 30 40 50 60 80 90 100 Figure 4. Maximum Reverse Characteristics 10k 30 RqJC = 1.42°C/W IF(AV), AVERAGE FORWARD CURRENT (A) TJ = 25°C 1k 100 70 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics C, JUNCTION CAPACITANCE (pF) 10 0.1 1 10 100 25 DC 20 Square Wave 15 10 5 0 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Leg www.onsemi.com 3 180 NTSV30H100ECT TYPICAL CHARACTERISTICS 60 30 RqJC = 1.42°C/W 50 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 55 dc 45 40 35 Square Wave 30 25 20 15 10 IPK/IAV = 10 25 IPK/IAV = 5 IPK/IAV = 20 20 Square Wave 15 dc 10 5 5 TJ = 175°C 0 40 60 80 100 120 140 160 180 0 0 4 8 12 16 20 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating per Leg Figure 8. Forward Power Dissipation 24 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% 20% 10% P(pk) 0.1 5% 0.01 t1 2% 1% 0.000001 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 9. Typical Transient Thermal Response www.onsemi.com 4 10 100 1000 NTSV30H100ECT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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