High-reliability discrete products and engineering services since 1977 MCR225-5, MCR225-7, MCR225-9, MCR225-12 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Value Unit Peak repetitive forward and reverse off state voltage (1) MCR225-5 MCR225-7 MCR225-9 MCR225-12 VDRM, VRRM On-state current RMS (all conduction angles; TC = 85°C) IT(RMS) 25 A Average on-state current (all conduction angles; TC = 85°C) IT(AV) 16 A Peak non-repetitive surge current (1/2 cycle, sine wave 60 Hz, t = 8.3ms) ITSM 300 A Forward peak gate power PGM 20 W Forward average gate power PG(AV) 0.5 W IGM 2.0 A Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Forward peak gate current 300 500 700 1000 V Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 1.5 °C/W Thermal resistance, junction-to-case ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit IDRM, IRRM - - 10 2.0 µA mA VTM - - 1.8 V IGT - 25 40 75 mA OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current (VAK = rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS Forward on-state voltage (2) (ITM = 50A) Gate trigger current (continuous dc) (VAK = 12Vdc, RL = 100Ω) TC = 25°C TC = -40°C Gate trigger voltage (continuous dc) (VAK = 12 Vdc, RL = 100Ω, TC = -40°C) VGT - 1.0 1.5 V Gate non-trigger voltage (VAK = rated VDRM, RL = 100Ω, TJ = 125°C) VGD 0.2 - - V - 35 40 Holding current (VAK = 12Vdc, TC = -40°C) IH Turn-on time (ITM = 25A, IGT = 50mAdc) tgt - 1.5 2.0 µs Turn-off time (VDRM = rated voltage) (ITM = 25A, IR = 25A) (ITM = 25A, IR = 25A, TJ = 125°C) tq - 15 35 - µs mA Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR225-5, MCR225-7, MCR225-9, MCR225-12 SILICON CONTROLLED RECTIFIERS DYNAMIC CHARACTERISTICS Critical rate of rise of off state voltage (Gate open, rated VDRM, exponential waveform) dv/dt - 50 - V/µs MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130128 High-reliability discrete products and engineering services since 1977 Average Current Derating MCR225-5, MCR225-7, MCR225-9, MCR225-12 SILICON CONTROLLED RECTIFIERS Symbol Parameter VDRM Peak repetitive off state forward voltage IDRM Peak forward blocking current VRRM Peak repetitive off state reverse voltage IRRM Peak reverse blocking current VTM Peak on state voltage IH Holding current Maximum On-State Power Dissipation Rev. 20130128 MCR225-5, MCR225-7, MCR225-9, MCR225-12 SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 Typical On-State Characteristics Maximum Non-Repetitive Surge Current Thermal Response Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR225-5, MCR225-7, MCR225-9, MCR225-12 SILICON CONTROLLED RECTIFIERS Typical Gate Trigger Current vs. Junction Temperature Typical Gate Trigger Voltage vs. Junction Temperature Typical Holding Current vs. Junction Temperature Rev. 20130128