2-Input OR Gate

NL17SHT32
2-Input OR Gate /
CMOS Logic Level Shifter
The NL17SHT32 is an advanced high speed CMOS 2−input OR
gate fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic−level translator from 3 V
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V
CMOS Logic while operating at the high−voltage power supply.
The NL17SHT32 input structure provides protection when voltages
up to 7 V are applied, regardless of the supply voltage. This allows the
NL17SHT32 to be used to interface 5 V circuits to 3 V circuits. The
output structures also provide protection when VCC = 0 V. These input
and output structures help prevent device destruction caused by supply
voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
Features
•
•
•
•
•
•
•
•
High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V
CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
These are Pb−Free Devices
IN A
5
1
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MARKING
DIAGRAM
SOT−953
CASE 527AE
Q
M
QM
1
= Specific Device Code
= Month Code
PIN ASSIGNMENT
1
IN A
2
GND
3
IN B
4
OUT Y
5
VCC
FUNCTION TABLE
Inputs
Output
A
B
Y
L
L
H
H
L
H
L
H
L
H
H
H
VCC
ORDERING INFORMATION
GND
2
IN B
3
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
4
OUT Y
Figure 1. Pinout (Top View)
IN A
IN B
≥1
OUT Y
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 0
1
Publication Order Number:
NL17SHT32/D
NL17SHT32
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
−0.5 to 7.0
−0.5 to VCC + 0.5
V
−20
mA
±20
mA
mA
VOUT
DC Output Voltage
VCC = 0
High or Low State
IIK
Input Diode Current
IOK
Output Diode Current
IOUT
DC Output Current
±25
ICC
DC Supply Current, VCC and GND
50
mA
PD
Power dissipation in still air
50
mW
TL
Lead temperature, 1 mm from case for 10 s
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
−65 to +150
°C
ILatchup
Latchup Performance
±100
mA
VOUT < GND; VOUT > VCC
Above VCC and Below GND at 125°C (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
3.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
0.0
0.0
5.5
VCC
V
−55
+125
°C
0
0
100
20
ns/V
VOUT
DC Output Voltage
TA
VCC = 0
High or Low State
Operating Temperature Range
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
TJ = 90 ° C
1,032,200
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
Device Junction Temperature versus
Time to 0.1% Bond Failures
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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2
NL17SHT32
DC ELECTRICAL CHARACTERISTICS
VCC
Symbol
Parameter
Test Conditions
Min
1.4
2.0
2.0
VIH
Minimum High−Level
Input Voltage
3.0
4.5
5.5
VIL
Maximum Low−Level
Input Voltage
3.0
4.5
5.5
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
TA = 25°C
(V)
Typ
TA ≤ 85°C
Max
Min
1.4
2.0
2.0
0.53
0.8
0.8
VIN = VIH or VIL
IOH = −50 mA
3.0
4.5
2.9
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
VIN = VIH or VIL
IOL = 50 mA
3.0
4.5
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
Max
3.0
4.5
0.0
0.0
−55 ≤ TA ≤ 125°C
Min
Max
1.4
2.0
2.0
0.53
0.8
0.8
V
0.53
0.8
0.8
2.9
4.4
2.9
4.4
2.48
3.80
2.34
3.66
Unit
V
V
V
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
V
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
2.0
20
40
mA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns)
TA = 25°C
Symbol
tPLH,
tPHL
CIN
Parameter
Maximum
Propagation Delay,
Input A or B to Y
Min
Test Conditions
TA ≤ 85°C
Typ
Max
Min
Max
−55 ≤ TA ≤ 125°C
Min
Max
Unit
ns
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
4.8
6.1
7.9
11.4
9.5
13.0
11.5
15.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
3.7
4.4
5.5
7.5
6.5
8.5
8.0
10.0
5.5
10
10
10
Maximum Input
Capacitance
pF
Typical @ 25°C, VCC = 5.0 V
CPD
11
Power Dissipation Capacitance (Note 2)
pF
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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3
NL17SHT32
Input A or B
50%
50% VCC
tPLH
GND
tPHL
VOH
Output Y
50% VCC
VOL
Figure 4. Switching Waveforms
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL *
*Includes all probe and jig capacitance
Figure 5. Test Circuit
ORDERING INFORMATION
Device
NL17SHT32P5T5G
Package
Shipping†
SOT−953
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NL17SHT32
PACKAGE DIMENSIONS
SOT−953
CASE 527AE
ISSUE E
X
D
A
Y
PIN ONE
INDICATOR
5
4
HE
E
1
2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM
A
b
C
D
E
e
HE
L
L2
L3
C
TOP VIEW
SIDE VIEW
e
L
5X
5X
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.95
1.00
1.05
0.175 REF
0.05
0.10
0.15
−−−
−−−
0.15
SOLDERING FOOTPRINT*
L3
5X
0.35
5X
0.20
5X
L2
5X
BOTTOM VIEW
b
PACKAGE
OUTLINE
0.08 X Y
1.20
1
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your local
Sales Representative
NL17SHT32/D