Schottky Barrier Diode

MBD701,
MMBD701L,
SMMBD701L
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
http://onsemi.com
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features







Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.0 pF @ VR = 20 V
High Reverse Voltage − to 70 V
Low Reverse Leakage − 200 nA (Max)
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25C
MBD701
MMBD701L, SMMBD701L
PF
mW
280
200
Derate above 25C
MBD701
MMBD701L, SMMBD701L
mW/C
2.8
2.0
Operating Junction Temperature
Range
TJ
−55 to +125
C
Storage Temperature Range
Tstg
−55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−92 2−Lead
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318
STYLE 8
TO−92
SOT−23
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
MARKING DIAGRAMS
MBD
701
AYWW G
G
5H M G
G
1
TO−92
SOT−23
A
= Assembly Location
Y
= Year
WW = Work Week
5H = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MBD701/D
MBD701, MMBD701L, SMMBD701L
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
V(BR)R
Total Capacitance
(VR = 20 V, f = 1.0 MHz) Figure 1
CT
Reverse Leakage
(VR = 35 V) Figure 3
IR
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
Min
Typ
Max
70
−
−
−
0.5
1.0
−
9.0
200
−
0.42
0.5
−
0.7
1.0
Unit
V
pF
nAdc
Vdc
Vdc
ORDERING INFORMATION
Package
Shipping†
TO−92
1,000 Units / Bulk
TO−92
(Pb−Free)
1,000 Units / Bulk
SOT−23
3,000 / Tape & Reel
MMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
10,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
MBD701
MBD701G
MMBD701LT1
MMBD701LT3
MMBD701LT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBD701, MMBD701L, SMMBD701L
TYPICAL ELECTRICAL CHARACTERISTICS
500
2.0
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
Figure 1. Total Capacitance
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
30
40
50
60
70
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
TA = 100C
1.0
TA = 75C
0.1
0.01
0.001
20
TA = 25C
10
TA = -40C
TA = 85C
1.0
TA = 25C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
50
0
Figure 3. Reverse Leakage
IF(PEAK)
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
1.6
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
http://onsemi.com
3
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
2.0
MBD701, MMBD701L, SMMBD701L
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
D
ÉÉ
ÉÉ
L
P
J
K
D
SECTION X−X
X X
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
--0.250
--0.080
0.105
--0.050
0.115
--0.135
---
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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4
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
--6.35
--2.03
2.66
--1.27
2.93
--3.43
---
MBD701, MMBD701L, SMMBD701L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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5
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For additional information, please contact your loca
Sales Representative
MBD701/D