ON Semiconductor MV104 Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. • High Figure of Merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz • Guaranteed Capacitance Range 37–42 pF @ VR = 3.0 Vdc (MV104) • Dual Diodes – Save Space and Reduce Cost • Monolithic Chip Provides Near Perfect Matching – Guaranteed ± 1.0% (Max) Over Specified Tuning Range DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 32 Vdc Forward Current IF 200 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 280 2.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg –55 to +150 °C 3 CASE 29–11, STYLE 15 TO–92 (TO–226AA) Pin 1 A1 Pin 3 A2 Pin 2 C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 32 — — Vdc Reverse Voltage Leakage Current TA = 25°C (VR = 30 Vdc) TA = 60°C IR — — — — 50 500 nAdc Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) TCC — 280 — ppm/°C Reverse Breakdown Voltage (IR = 10 µAdc) CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 2 Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min Max Min Typ Min Max 37 42 100 140 2.5 2.8 1 Publication Order Number: MV104/D MV104 TYPICAL CHARACTERISTICS (Each Diode) 550 70 Q, FIGURE OF MERIT CT , DIODE CAPACITANCE (pF) 100 40 20 350 250 TA = 25°C f = 100 MHz 150 10 0.3 0.5 2.0 1.0 3.0 5.0 7.0 10 20 0 3.0 6.0 9.0 12 15 18 24 21 27 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance (Each Diode) Figure 2. Figure of Merit versus Voltage CT , DIODE CAPACITANCE (NORMALIZED) 1000 VR = 3.0 Vdc TA = 25°C 500 200 100 50 20 30 50 70 100 1.04 VR = 2.0 V 1.03 1.02 4.0 V 1.01 1.00 30 V 0.99 NORMALIZED to CT at TA = 25°C 0.98 0.97 0.96 -75 200 300 30 -50 -25 +25 0 +50 +75 +100 +125 f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature 100 50 I R , REVERSE CURRENT (nA) 20 10 50 30 2000 Q, FIGURE OF MERIT 450 TA = 125°C 20 10 5 TA = 75°C 2 1 0.5 0.2 0.1 TA = 25°C 0.05 0.02 0.01 0 5.0 15 10 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage http://onsemi.com 2 MV104 PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N YLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 http://onsemi.com 3 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- MV104 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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