Q2 2013 Reliability Monitor Report

Reliability
Monitor
Report
High Temperature Operating Life
Data Retention Bake
Temperature Cycle
Temperature & Humidity Bias/ HAST
Steam Pressure Pot
Second QUARTER 2013
Table of Contents
1. Executive Summary
1
2. HTOL (sorted by product BU)
2
3. HTOL (sorted by technology)
3-4
4. Data Retention Bake (sorted by product BU)
5
5. Data Retention Bake (sorted by technology)
6
6. Temperature Cycle
7
7. Temperature Humidity Bias & HAST
8
8. Steam Pressure Pot
9
9. Failure Rate Calculations
10
10. Definitions
11
RELIABILITY MONITOR REPORT
Reliability Monitor Report
Date:
Nov 1, 2013
Executive Summary
The intent of the Reliability Monitor Program is to measure the reliability of previously
qualified devices on a quarterly basis. This is achieved by selecting representative
devices within a process, package or business unit and performing a series of reliability
tests to ensure that the reliability has maintained over time. Listed below are the
overall results for the last quarter.
1.
High Temperature Operating Life (125° - 150°C; 0 failures)
✓ Failure Rate: 11 FITS (590,760 device-hours)
✓ Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6
eV). Also, Thermal and Voltage Acceleration are used to compute the overall
acceleration factor. Weighted acceleration factors (WAF) for a group of products are
calculated by taking the weighted average of each device’s acceleration factor multiplied
by its corresponding device hours. All failures were inconclusive.
2.
Data Retention Bake (150°C; 0 failures)
✓ Failure Rate: 49 FITS (160K device-hours)
✓ Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6
eV). Since there is no bias applied during testing and the stress temperature is fixed for
all devices at 150°C, the acceleration factor is 117 for all groupings.
3.
Temperature Cycle (-65°C to 150°C, 500 cycles) *
✓ Failure Rate: 0.00% (0 failures out of 159 units)
4.
Temperature Humidity Bias (85°C/85%RH) and HAST (130°C/85%RH) *
✓ Failure Rate: 0.00% (0 failures out of 936K device-hours)
✓ Note: A 20:1 Acceleration Factor is used to combine HAST results with THB).
5.
Steam Pressure Pot (121°C/100%RH) *
✓ Failure Rate: 0.00% (0 failures out of 160 units)
RELIABILITY MONITOR REPORT
* indicates that preconditioning is performed prior to the stress test.
1
High Temperature Operating Life
(sorted by FAMILY)
48 Hours
REJ
SS
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ SS
BU
QTR
Device-Hours*
WAF
EFR PPM
FITS
MEMORY
1
LAST 4Q
0
899
0
240
0
240
0
240
271,632
135
0
25
MCU
1
LAST 4Q
0
0
300
377
0
0
80
157
0
0
80
157
0
0
80
157
90,560
167,560
236
181
0
0
43
30
RFA
1
LAST 4Q
0
0
2,785
11,655
0
0
385
2,528
0
0
385
2,528
0
0
385
1,535
500,200
2,620,596
119
117
0
0
15
3
ATMEL
1
LAST 4Q
0
0
3,085
12,931
0
0
465
2,925
0
0
465
2,925
0
0
465
1,932
590,760
3,059,788
137
123
0
0
11
2
RELIABILITY MONITOR REPORT
2
High Temperature Operating Life
(sorted by TECHNOLOGY)
48 Hours
REJ
SS
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
2K Hours
REJ
SS
TECH
QTR
Device-Hours*
WAF
EFR PPM
FITS
UHF6
1
LAST 4Q
0
0
800
953
0
0
0
153
0
0
0
153
0
0
0
0
0
0
0
0
38,400
114,900
142
75
0
0
168
106
UHF5
1
LAST 4Q
0
800
0
0
0
0
0
0
0
0
38,400
117
0
204
1
LAST 4Q
0
154
0
154
0
154
0
0
0
0
77,000
117
0
102
1
LAST 4Q
0
77
0
77
0
77
0
0
0
0
38,500
206
0
116
1
LAST 4Q
0
77
0
77
0
77
0
77
0
0
77,000
42
0
285
1
LAST 4Q
0
77
0
77
0
77
0
0
0
0
38,500
117
0
203
1
LAST 4Q
0
157
0
157
0
157
0
157
0
0
157,000
6
0
987
1
LAST 4Q
0
152
0
152
0
152
0
0
0
0
76,000
60
0
201
1
LAST 4Q
0
73
0
73
0
73
0
73
0
0
73,000
96
0
130
75K
1
LAST 4Q
0
0
877
5,437
0
0
77
687
0
0
77
687
0
0
77
615
0
0
0
0
115,400
879,000
117
159
0
0
68
7
63K
1
LAST 4Q
0
899
0
240
0
240
0
240
0
0
271,632
135
0
25
1
LAST 4Q
0
800
0
0
0
0
0
0
0
0
38,400
44
0
548
45.5K
1
LAST 4Q
0
0
77
228
0
0
77
228
0
0
77
228
0
0
77
228
0
0
0
74
77,000
302,000
117
112
0
0
102
27
45.3K
1
LAST 4Q
0
154
0
77
0
77
0
77
0
77
157,696
142
0
41
45.2K
1
LAST 4Q
0
0
77
154
0
0
77
154
0
0
77
154
0
0
77
77
0
0
0
0
77,000
115,500
117
113
0
0
102
70
45.1 K
1
LAST 4Q
0
77
0
77
0
77
0
0
0
0
38,500
42
0
571
1
LAST 4Q
0
154
0
154
0
154
0
0
0
0
77,000
111
0
108
1
LAST 4Q
0
1,177
0
77
0
77
0
77
0
0
129,800
109
0
65
SAC2NV
SIGE1
IL4-12KC_PC
I2L4
BD1-2_P
BCDMOS
77K
58.9K
40.2K
40.1K
RELIABILITY MONITOR REPORT
3
High Temperature Operating Life
(sorted by TECHNOLOGY)
48 Hours
REJ
SS
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
2K Hours
REJ
SS
TECH
QTR
Device-Hours*
WAF
EFR PPM
FITS
40K
1
LAST 4Q
0
0
77
77
0
0
77
77
0
0
77
77
0
0
77
77
0
0
0
0
77,000
77,000
117
117
0
0
102
102
35.9K
1
LAST 4Q
0
0
300
300
0
0
80
80
0
0
80
80
0
0
80
80
0
0
0
0
90,560
90,560
236
236
0
0
43
43
35.4K
1
LAST 4Q
0
0
877
954
0
0
77
154
0
0
77
154
0
0
77
154
0
0
0
0
115,400
192,400
117
117
0
0
68
41
ATMEL
1
LAST 4Q
0
0
3,085
12,931
0
0
465
2,925
0
0
465
2,925
0
0
465
1,932
0
0
0
151
590,760
3,059,788
137
123
0
0
11
2
RELIABILITY MONITOR REPORT
4
Data Retention Bake
(sorted by FAMILY)
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
BU
QTR
Device-Hours
AF
FITS
MEMORY
1
LAST 4Q
0
480
0
480
0
480
480,000
117
16
MCU
1
LAST 4Q
0
0
160
320
0
0
160
320
0
0
160
320
160,000
320,000
117
117
49
24
ATMEL
1
LAST 4Q
0
0
160
800
0
0
160
800
0
0
160
800
160,000
800,000
117
117
49
10
RELIABILITY MONITOR REPORT
5
Data Retention Bake
(sorted by TECHNOLOGY)
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
TECH
QTR
63 K
1
LAST 4Q
0
400
0
400
0
400
400,000
117
20
1
LAST 4Q
0
80
0
80
0
80
80,000
117
98
35.9K
1
LAST 4Q
0
0
80
80
0
0
80
80
0
0
80
80
80,000
80,000
117
117
98
98
35.4K
1
LAST 4Q
0
0
80
80
0
0
80
80
0
0
80
80
80,000
80,000
117
117
98
98
35K
1
LAST 4Q
0
80
0
80
0
80
80,000
117
98
1
LAST 4Q
0
80
0
80
0
80
80,000
117
98
1
LAST 4Q
0
0
160
800
0
0
160
800
0
0
160
800
160,000
800,000
117
117
49
10
37K
34K
ATMEL
Device-Hours AF
RELIABILITY MONITOR REPORT
6
FITS
Temperature Cycle
100 Cycles
REJ
SS
200 Cycles
REJ
SS
500 Cycles
REJ
SS
1K Cycles
REJ
SS
PACKAGE
QTR
CASON
1
LAST 4Q
0
80
0
80
0
80
0
80
0.00%
MLF / QFN
1
LAST 4Q
0
0
79
159
0
0
79
159
0
0
79
159
0
0
79
159
0.00%
0.00%
PDIP
1
LAST 4Q
0
160
0
160
0
160
0
160
0.00%
SOIC
1
LAST 4Q
0
0
80
400
0
0
80
400
0
0
80
400
0
0
80
400
0.00%
0.00%
ATMEL
1
LAST 4Q
0
0
159
799
0
0
159
799
0
0
159
799
0
0
159
799
0.00%
0.00%
RELIABILITY MONITOR REPORT
% Defective
7
Temperature Humidity Bias / HAST
Temperature Humidity Bias
HAST
168 Hours 500 Hours 1K Hours 100 Hours Device-Hours* % Defective
REJ SS REJ SS REJ SS REJ SS
PACKAGE
QTR
CASON
1
LAST 4Q
0
0
0
0
0
0
0
80
160,000
0.00%
1
LAST 4Q
0
0
0
0
0
0
0
0
234
1,392
468,000
2,784,000
0.00%
0.00%
1
LAST 4Q
0
0
0
0
0
0
0
237
474,000
0.00%
1
LAST 4Q
0
0
0
0
0
0
0
0
80
708
160,000
1,416,000
0.00%
0.00%
1
LAST 4Q
0
0
0
0
0
0
0
0
468
4,111
936,000
8,222,000
0.00%
0.00%
MLF / QFN
PDIP
SOIC
ATMEL
RELIABILITY MONITOR REPORT
8
Steam Pressure Pot
96 Hours
REJ
SS
168 Hours
REJ
SS
240 Hours
REJ
SS
PACKAGE
QTR
CASON
1
LAST 4Q
0
80
0
80
0
80
0.0%
MLF / QFN
1
LAST 4Q
0
0
80
160
0
0
80
160
0
0
80
160
0.0%
0.0%
PDIP
1
LAST 4Q
0
160
0
160
0
160
0.0%
SOIC
1
LAST 4Q
0
0
80
400
0
0
80
400
0
0
80
400
0.0%
0.0%
ATMEL
1
LAST 4Q
0
0
160
800
0
0
160
800
0
0
160
800
0.00%
0.00%
RELIABILITY MONITOR REPORT
% Defective
9
Failure Rate Calculations
Failure Rate:
χ2
λ =
where,
λ
χ2
α
n
AF
DH
=
=
=
=
=
=
(1 −
α
100
, 2⋅n + 2 )
⋅ 109
2 ⋅ AF ⋅ DH
Failure Rate (FITS)
Failure Estimate
Confidence Level (60% or 90%)
Number of Failures
Overall Acceleration Factor (TAF x VAF)
Device Hours
Thermal Acceleration:
TAF
where,
TAF
EA
k
T
f
s
P
θJA
=
=
=
=
=
=
=
=
= e

ea 
1
1
⋅
−

k  Tf + ( Pf ⋅θ JAf ) Ts + ( Ps ⋅θ JAs ) 
Thermal Acceleration Factor
Activation Energy (eV)
Boltzman’s Constant (8.617 x 10-5 eV/°K)
Temperature (°K)
Field Conditions
Stress Conditions
Power Dissipation (W)
Thermal Resistance Coefficient - Junction to Ambient (°C/W)
Voltage Acceleration:
VAF
where,
VAF
Vs
Vn
Z
=
=
=
=
= eZ⋅
[ VS − Vn ]
Voltage Acceleration Factor
Stress Voltage (V)
Nominal Voltage (V)
Voltage Acceleration Constant (typically, 0.5 < Z < 1.0)
RELIABILITY MONITOR REPORT
10
Definitions
Data Retention Bake (DRB): This test is used to measure a device’s ability to retain
a charge for extended periods of time without applying voltage bias. Stressing
at high temperatures (150°C for plastic packages) accelerates any discharge
causing the memory state to change.
Failures In Time (FITS): This is the unit measure for expressing failure rates and is
identical to the expression PPM/K hours. For example, three failures out of a
million components tested for one thousand hours equates to 3 FITS.
High Temperature Operating Life (HTOL): The purpose of this test is to accelerate
thermally activated failure mechanisms through the use of high temperatures
(typically between 125°C and 150°C), increased voltage, and dynamic bias
conditions. Readouts at various time points are taken to determine the Early
Failure Rate (EFR) and Intrinsic Failure Rate (IFR). EFR is expressed in
defective parts per million (DPPM) and IFR is expressed in Failures in Time
(FITS at 55°C).
Highly Accelerated Stress Test (HAST): The purpose of this test is to evaluate a
plastic packaged component’s ability to withstand harsh environmental
conditions with extreme temperature and humidity levels. The parts are
stressed to high temperature (130°C) and relative humidity (85%RH) conditions
in a biased state to achieve maximum acceleration.
Steam Pressure Pot (SPP): The test is used to evaluate a plastic packaged
component’s ability to withstand severe conditions of pressure (15 psig),
temperature (121°C), and humidity (100%RH).
Temperature Cycle (TC): This test is used to measure a product’s sensitivity to
thermal stresses due to differences in expansion and contraction characteristics
of the die and mold compound by repeated alternating temperature dwells
between high and low temperature extremes.
Temperature Humidity Bias (THB): The purpose of this test (85°C/85%RH) is
identical to HAST. The only difference is that HAST accelerates THB by a factor
of 20:1 due to the increase in temperature during test.
RELIABILITY MONITOR REPORT
11