Reliability Monitor Report High Temperature Operating Life Data Retention Bake Temperature Cycle Temperature & Humidity Bias/ HAST Steam Pressure Pot First QUARTER 2013 Table of Contents 1. Executive Summary 1 2. HTOL (sorted by product BU) 2 3. HTOL (sorted by technology) 3-4 4. Data Retention Bake (sorted by product BU) 5 5. Data Retention Bake (sorted by technology) 6 6. Temperature Cycle 7 7. Temperature Humidity Bias & HAST 8 8. Steam Pressure Pot 9 9. Failure Rate Calculations 10 10. Definitions 11 RELIABILITY MONITOR REPORT Reliability Monitor Report Date: Oct 22, 2013 Executive Summary The intent of the Reliability Monitor Program is to measure the reliability of previously qualified devices on a quarterly basis. This is achieved by selecting representative devices within a process, package or business unit and performing a series of reliability tests to ensure that the reliability has maintained over time. Listed below are the overall results for the last quarter. 1. High Temperature Operating Life (125° - 150°C; 0 failures) ✓ Failure Rate: 10 FITS (616,196 device-hours) ✓ Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6 eV). Also, Thermal and Voltage Acceleration are used to compute the overall acceleration factor. Weighted acceleration factors (WAF) for a group of products are calculated by taking the weighted average of each device’s acceleration factor multiplied by its corresponding device hours. All failures were inconclusive. 2. Data Retention Bake (150°C; 0 failures) ✓ Failure Rate: 98 FITS (80K device-hours) ✓ Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6 eV). Since there is no bias applied during testing and the stress temperature is fixed for all devices at 150°C, the acceleration factor is 117 for all groupings. 3. Temperature Cycle (-65°C to 150°C, 500 cycles) * ✓ Failure Rate: 0.00% (0 failures out of 80 units) 4. Temperature Humidity Bias (85°C/85%RH) and HAST (130°C/85%RH) * ✓ Failure Rate: 0.00% (0 failures out of 622K device-hours) ✓ Note: A 20:1 Acceleration Factor is used to combine HAST results with THB). 5. Steam Pressure Pot (121°C/100%RH) * ✓ Failure Rate: 0.00% (0 failures out of 80 units) RELIABILITY MONITOR REPORT * indicates that preconditioning is performed prior to the stress test. 1 High Temperature Operating Life (sorted by FAMILY) 48 Hours REJ SS 168 Hours REJ SS 500 Hours REJ SS 1K Hours REJ SS BU QTR APG 4 LAST 4Q 0 82 0 82 0 82 0 4 LAST 4Q 0 280 0 280 0 280 4 LAST 4Q 0 999 0 340 0 4 LAST 4Q 0 1,739 0 545 RFA 4 LAST 4Q 0 0 5,211 13,332 0 0 ATMEL 4 LAST 4Q 0 0 5,211 16,432 0 0 ASIC MEMORY MCU Device-Hours* WAF EFR PPM FITS 82 82,000 23 0 492 0 100 190,000 13 0 363 340 0 340 371,632 111 0 22 0 545 0 308 483,812 70 0 27 384 2,682 0 0 384 2,682 0 0 231 1,381 616,196 2,693,700 146 106 0 0 10 3 384 3,929 0 0 384 3,929 0 0 231 2,211 616,196 3,821,144 146 96 0 0 10 2 RELIABILITY MONITOR REPORT 2 High Temperature Operating Life (sorted by TECHNOLOGY) 48 Hours REJ SS 168 Hours REJ SS 500 Hours REJ SS 1K Hours REJ SS TECH QTR Device-Hours* WAF EFR PPM FITS UHF6 4 LAST 4Q 0 153 0 153 0 153 0 0 76,500 42 0 287 4 LAST 4Q 0 800 0 0 0 0 0 0 38,400 117 0 204 4 LAST 4Q 0 77 0 77 0 77 0 0 38,500 117 0 203 4 LAST 4Q 0 231 0 231 0 231 0 77 154,000 79 0 75 4 LAST 4Q 0 77 0 77 0 77 0 0 38,500 206 0 116 4 LAST 4Q 0 77 0 77 0 77 0 77 77,000 42 0 285 I2L4 4 LAST 4Q 0 0 77 77 0 0 77 77 0 0 77 77 0 0 0 0 38,500 38,500 117 117 0 0 203 203 BD1-2_P 4 LAST 4Q 0 157 0 157 0 157 0 157 157,000 6 0 987 BCDMOS 4 LAST 4Q 0 0 76 152 0 0 76 152 0 0 76 152 0 0 0 0 38,000 76,000 117 60 0 0 206 201 77K 4 LAST 4Q 0 73 0 73 0 73 0 73 73,000 96 0 130 75K 4 LAST 4Q 0 0 4,027 4,637 0 0 77 687 0 0 77 687 0 0 77 615 266,600 840,600 180 161 0 0 19 7 63K 4 LAST 4Q 0 899 0 240 0 240 0 240 271,632 135 0 25 58.9K 4 LAST 4Q 0 0 800 800 0 0 0 0 0 0 0 0 0 0 0 0 38,400 38,400 44 44 0 0 548 548 58K 4 LAST 4Q 0 320 0 77 0 77 0 0 50,164 3 0 6,105 4 LAST 4Q 0 145 0 145 0 145 0 100 122,500 19 0 393 4 LAST 4Q 0 90 0 90 0 90 0 0 45,000 3 0 6,805 UHF5 SCMOS3 SAC2NV SIGE1 IL4-12KC_PC 57K 56K RELIABILITY MONITOR REPORT 3 High Temperature Operating Life (sorted by TECHNOLOGY) 48 Hours REJ SS 168 Hours REJ SS 500 Hours REJ SS 1K Hours REJ SS TECH QTR 46K 4 LAST 4Q 0 82 0 82 0 82 0 4 LAST 4Q 0 154 0 154 0 154 4 LAST 4Q 0 151 0 151 0 45.3K 4 LAST 4Q 0 0 154 154 0 0 77 77 45.2K 4 LAST 4Q 0 77 0 4 LAST 4Q 0 77 4 LAST 4Q 0 40.1K 4 LAST 4Q 40K 45.6K 45.5K 45.1 K 40.2K 38.6 K 35.4K 35K ATMEL Device-Hours* WAF EFR PPM FITS 82 82,000 23 0 492 0 0 77,000 142 0 84 151 0 151 225,000 110 0 37 0 0 77 77 0 0 77 77 157,696 157,696 142 142 0 0 41 41 77 0 77 0 0 38,500 104 0 228 0 77 0 77 0 0 38,500 42 0 571 154 0 154 0 154 0 0 77,000 111 0 108 0 0 77 1,177 0 0 77 77 0 0 77 77 0 0 77 77 77,000 129,800 117 109 0 0 102 65 4 LAST 4Q 0 477 0 77 0 77 0 77 96,200 117 0 81 4 LAST 4Q 0 3,600 0 77 0 77 0 77 246,104 17 0 225 4 LAST 4Q 0 77 0 77 0 77 0 77 77,000 117 0 102 4 LAST 4Q 0 1,487 0 536 0 536 0 254 440,648 57 0 36 4 LAST 4Q 0 0 5,211 16,432 0 0 384 3,929 0 0 384 3,929 0 0 231 2,211 616,196 3,821,144 146 96 0 0 10 2 * The Device-Hours computation includes additional read-outs not detailed in the report. RELIABILITY MONITOR REPORT 4 Data Retention Bake (sorted by FAMILY) 168 Hours REJ SS 500 Hours REJ SS 1K Hours REJ SS BU QTR MEMORY 4 LAST 4Q 0 0 80 560 0 0 80 560 0 0 MCU 4 LAST 4Q 0 474 0 474 4 LAST 4Q 0 0 80 1,034 0 0 80 1,034 ATMEL Device-Hours AF FITS 80 560 80,000 560,000 117 117 98 14 0 394 434,000 117 18 0 0 80 954 80,000 994,000 117 117 98 8 RELIABILITY MONITOR REPORT 5 Data Retention Bake (sorted by TECHNOLOGY) 168 Hours REJ SS 500 Hours REJ SS 1K Hours REJ SS TECH QTR 63 K 4 LAST 4Q 0 0 80 480 0 0 80 480 0 0 80 480 80,000 480,000 117 117 98 16 58K 4 LAST 4Q 0 77 0 77 0 77 77,000 117 102 4 LAST 4Q 0 80 0 80 0 80 80,000 117 98 4 LAST 4Q 0 317 0 317 0 237 277,000 117 28 4 LAST 4Q 0 80 0 80 0 80 80,000 117 98 4 LAST 4Q 0 0 80 1,034 0 0 80 1,034 0 0 80 954 80,000 994,000 117 117 98 8 37K 35K 34K ATMEL Device-Hours AF RELIABILITY MONITOR REPORT 6 FITS Temperature Cycle 100 Cycles REJ SS 200 Cycles REJ SS 500 Cycles REJ SS 1K Cycles REJ SS PACKAGE QTR CASON 4 LAST 4Q 0 0 80 80 0 0 80 80 0 0 80 80 0 0 80 80 0.00% 0.00% BGA 4 LAST 4Q 0 80 0 80 0 80 0 80 0.00% 4 LAST 4Q 0 80 0 80 0 80 0 80 0.00% 4 LAST 4Q 0 160 0 160 0 160 0 160 0.00% 4 LAST 4Q 0 400 0 400 0 400 0 400 0.00% 4 LAST 4Q 0 154 0 72 0 0 0 0 0.00% 4 LAST 4Q 0 0 80 954 0 0 80 872 0 0 80 800 0 0 80 800 0.00% 0.00% MLF / QFN PDIP SOIC TQFP ATMEL RELIABILITY MONITOR REPORT 7 % Defective Temperature Humidity Bias / HAST Temperature Humidity Bias HAST 168 Hours 500 Hours 1K Hours 100 Hours Device-Hours* % Defective REJ SS REJ SS REJ SS REJ SS PACKAGE QTR MLF / QFN 4 LAST 4Q 0 308 0 308 0 308 0 2,852 6,012,000 0.00% 4 LAST 4Q 0 154 0 154 0 77 0 0 115,500 0.00% 4 LAST 4Q 0 462 0 462 0 385 0 0 311 5,337 622,000 11,097,500 0.00% 0.00% TRANS ATMEL RELIABILITY MONITOR REPORT 8 Steam Pressure Pot 96 Hours REJ SS 168 Hours REJ SS 240 Hours REJ SS PACKAGE QTR CASON 4 LAST 4Q 0 0 80 80 0 0 80 80 0 0 80 80 0.0% 0.0% BGA 4 LAST 4Q 0 80 0 80 0 80 0.0% 4 LAST 4Q 0 80 0 80 0 80 0.0% 4 LAST 4Q 0 160 0 160 0 160 0.0% 4 LAST 4Q 0 400 0 400 0 400 0.0% 4 LAST 4Q 0 143 0 0 0 0 0.0% 4 LAST 4Q 0 0 80 943 0 0 80 800 0 0 80 800 0.00% 0.00% MLF / QFN PDIP SOIC TQFP ATMEL RELIABILITY MONITOR REPORT % Defective 9 Failure Rate Calculations Failure Rate: χ2 λ = where, λ χ2 α n AF DH = = = = = = (1 − α 100 , 2⋅n + 2 ) ⋅ 109 2 ⋅ AF ⋅ DH Failure Rate (FITS) Failure Estimate Confidence Level (60% or 90%) Number of Failures Overall Acceleration Factor (TAF x VAF) Device Hours Thermal Acceleration: TAF where, TAF EA k T f s P θJA = = = = = = = = = e ea 1 1 ⋅ − k Tf + ( Pf ⋅θ JAf ) Ts + ( Ps ⋅θ JAs ) Thermal Acceleration Factor Activation Energy (eV) Boltzman’s Constant (8.617 x 10-5 eV/°K) Temperature (°K) Field Conditions Stress Conditions Power Dissipation (W) Thermal Resistance Coefficient - Junction to Ambient (°C/W) Voltage Acceleration: VAF where, VAF Vs Vn Z = = = = = eZ⋅ [ VS − Vn ] Voltage Acceleration Factor Stress Voltage (V) Nominal Voltage (V) Voltage Acceleration Constant (typically, 0.5 < Z < 1.0) RELIABILITY MONITOR REPORT 10 Definitions Data Retention Bake (DRB): This test is used to measure a device’s ability to retain a charge for extended periods of time without applying voltage bias. Stressing at high temperatures (150°C for plastic packages) accelerates any discharge causing the memory state to change. Failures In Time (FITS): This is the unit measure for expressing failure rates and is identical to the expression PPM/K hours. For example, three failures out of a million components tested for one thousand hours equates to 3 FITS. High Temperature Operating Life (HTOL): The purpose of this test is to accelerate thermally activated failure mechanisms through the use of high temperatures (typically between 125°C and 150°C), increased voltage, and dynamic bias conditions. Readouts at various time points are taken to determine the Early Failure Rate (EFR) and Intrinsic Failure Rate (IFR). EFR is expressed in defective parts per million (DPPM) and IFR is expressed in Failures in Time (FITS at 55°C). Highly Accelerated Stress Test (HAST): The purpose of this test is to evaluate a plastic packaged component’s ability to withstand harsh environmental conditions with extreme temperature and humidity levels. The parts are stressed to high temperature (130°C) and relative humidity (85%RH) conditions in a biased state to achieve maximum acceleration. Steam Pressure Pot (SPP): The test is used to evaluate a plastic packaged component’s ability to withstand severe conditions of pressure (15 psig), temperature (121°C), and humidity (100%RH). Temperature Cycle (TC): This test is used to measure a product’s sensitivity to thermal stresses due to differences in expansion and contraction characteristics of the die and mold compound by repeated alternating temperature dwells between high and low temperature extremes. Temperature Humidity Bias (THB): The purpose of this test (85°C/85%RH) is identical to HAST. The only difference is that HAST accelerates THB by a factor of 20:1 due to the increase in temperature during test. RELIABILITY MONITOR REPORT 11