Q4 2012 Reliability Monitor Report

Reliability
Monitor
Report
High Temperature Operating Life
Data Retention Bake
Temperature Cycle
Temperature & Humidity Bias/ HAST
Steam Pressure Pot
Fourth QUARTER 2012
Table of Contents
1. Executive Summary
1
2. HTOL (sorted by product BU)
2
3. HTOL (sorted by technology)
3-4
4. Data Retention Bake (sorted by product BU)
5
5. Data Retention Bake (sorted by technology)
6
6. Temperature Cycle
7
7. Temperature Humidity Bias & HAST
8
8. Steam Pressure Pot
9
9. Failure Rate Calculations
10
10. Definitions
11
RELIABILITY MONITOR REPORT
Reliability Monitor Report
Date:
Oct 16, 2013
Executive Summary
The intent of the Reliability Monitor Program is to measure the reliability of previously
qualified devices on a quarterly basis. This is achieved by selecting representative
devices within a process, package or business unit and performing a series of reliability
tests to ensure that the reliability has maintained over time. Listed below are the
overall results for the last quarter.
1.
High Temperature Operating Life (125° - 150°C; 0 failures)
✓ Failure Rate: 6 FITS (753,260 device-hours)
✓ Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6
eV). Also, Thermal and Voltage Acceleration are used to compute the overall
acceleration factor. Weighted acceleration factors (WAF) for a group of products are
calculated by taking the weighted average of each device’s acceleration factor multiplied
by its corresponding device hours. All failures were inconclusive.
2.
Data Retention Bake (150°C; 0 failures)
✓ Failure Rate: 33 FITS (240K device-hours)
✓ Note: The Exponential Model is used to derive FIT rates (60% Confidence; EA = 0.6
eV). Since there is no bias applied during testing and the stress temperature is fixed for
all devices at 150°C, the acceleration factor is 117 for all groupings.
3.
Temperature Cycle (-65°C to 150°C, 500 cycles) *
✓ Failure Rate: 0.00% (0 failures out of 240 units)
4.
Temperature Humidity Bias (85°C/85%RH) and HAST (130°C/85%RH) *
✓ Failure Rate: 0.00% (0 failures out of 2,174K device-hours)
✓ Note: A 20:1 Acceleration Factor is used to combine HAST results with THB).
5.
Steam Pressure Pot (121°C/100%RH) *
✓ Failure Rate: 0.00% (0 failures out of 240 units)
RELIABILITY MONITOR REPORT
* indicates that preconditioning is performed prior to the stress test.
1
High Temperature Operating Life
(sorted by FAMILY)
48 Hours
REJ
SS
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ SS
BU
QTR
APG
3
LAST 4Q
0
164
0
164
0
164
0
3
LAST 4Q
0
500
0
500
0
500
MEMORY
3
LAST 4Q
0
0
300
1,491
0
0
80
640
0
0
MCU
3
LAST 4Q
0
0
77
4,935
0
0
77
961
RFA
3
LAST 4Q
0
0
2,513
10,094
0
0
ATMEL
3
LAST 4Q
0
0
2,890
17,184
0
0
ASIC
Device-Hours*
WAF
EFR PPM
FITS
164
164,000
23
0
246
0
300
400,000
18
0
129
80
640
0
0
80
639
90,560
680,348
236
82
0
0
43
16
0
0
77
782
0
0
77
308
77,000
765,824
117
51
0
0
102
23
613
2,991
0
0
613
2,991
0
0
228
1,689
585,700
2,754,944
192
137
0
0
8
2
770
5,256
0
0
770
5,077
0
0
385
3,100
753,260
4,765,116
189
101
0
0
6
2
RELIABILITY MONITOR REPORT
2
High Temperature Operating Life
(sorted by TECHNOLOGY)
48 Hours
REJ
SS
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
TECH
QTR
Device-Hours*
WAF
EFR PPM
FITS
UHF6
3
LAST 4Q
0
153
0
153
0
153
0
0
76,500
42
0
287
UHF5
3
LAST 4Q
0
0
800
800
0
0
0
0
0
0
0
0
0
0
0
0
38,400
38,400
117
117
0
0
204
204
UHF
3
LAST 4Q
0
77
0
77
0
77
0
77
77,000
52
0
102
230
3
LAST 4Q
0
77
0
77
0
77
0
0
38,500
117
0
203
SAC2NV
3
LAST 4Q
0
0
154
231
0
0
154
231
0
0
154
231
0
0
0
77
77,000
154,000
117
79
0
0
102
75
SIGE1
3
LAST 4Q
0
0
77
77
0
0
77
77
0
0
77
77
0
0
0
0
38,500
38,500
206
206
0
0
116
116
IL4-12KC_PC
3
LAST 4Q
0
77
0
77
0
77
0
77
77,000
42
0
285
3
LAST 4Q
0
157
0
157
0
157
0
157
157,000
6
0
987
3
LAST 4Q
0
76
0
76
0
76
0
0
38,000
3
0
9,538
3
LAST 4Q
0
73
0
73
0
73
0
73
73,000
96
0
130
75K
3
LAST 4Q
0
0
154
2,044
0
0
154
764
0
0
154
764
0
0
154
692
154,000
789,440
392
293
0
0
15
4
63K
3
LAST 4Q
0
0
300
899
0
0
80
240
0
0
80
240
0
0
80
240
90,560
271,632
236
135
0
0
43
25
58K
3
LAST 4Q
0
728
0
256
0
77
0
0
91,228
3
0
3,357
3
LAST 4Q
0
245
0
245
0
245
0
200
222,500
21
0
199
3
LAST 4Q
0
210
0
210
0
210
0
100
155,000
16
0
376
3
LAST 4Q
0
164
0
164
0
164
0
164
164,000
23
0
246
3
LAST 4Q
0
154
0
154
0
154
0
0
77,000
142
0
84
3
LAST 4Q
0
0
74
151
0
0
74
151
0
0
74
151
0
0
74
151
148,000
225,000
117
110
0
0
53
37
SCMOS3
BD1-2_P
BCDMOS
77K
57K
56K
46K
45.6K
45.5K
RELIABILITY MONITOR REPORT
3
High Temperature Operating Life
(sorted by TECHNOLOGY)
48 Hours
REJ
SS
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
TECH
QTR
45.2K
3
LAST 4Q
0
0
77
77
0
0
77
77
0
0
77
77
0
0
45.1 K
3
LAST 4Q
0
77
0
77
0
77
40.2K
3
LAST 4Q
0
0
77
154
0
0
77
154
0
0
40.1K
3
LAST 4Q
0
0
1,100
1,100
0
0
0
0
40K
3
LAST 4Q
0
554
0
3
LAST 4Q
0
3,754
35.4K
3
LAST 4Q
0
0
35K
3
LAST 4Q
38.6 K
34K
ATMEL
Device-Hours*
WAF
EFR PPM
FITS
0
0
38,500
38,500
104
104
0
0
228
228
0
0
38,500
42
0
571
77
154
0
0
0
0
38,500
77,000
104
111
0
0
228
108
0
0
0
0
0
0
0
0
52,800
52,800
97
97
0
0
180
180
154
0
154
0
154
173,200
117
0
45
0
231
0
231
0
231
400,104
55
0
41
77
77
0
0
77
77
0
0
77
77
0
0
77
77
77,000
77,000
117
117
0
0
102
102
0
4,706
0
1,204
0
1,204
0
531
1,035,596
44
0
20
3
LAST 4Q
0
292
0
100
0
100
0
99
108,716
42
0
202
3
LAST 4Q
0
0
2,890
17,184
0
0
770
5,256
0
0
770
5,077
0
0
385
3,100
753,260
4,765,116
189
101
0
0
6
2
* The Device-Hours computation includes additional read-outs not detailed in the report.
RELIABILITY MONITOR REPORT
4
Data Retention Bake
(sorted by FAMILY)
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
BU
QTR
Device-Hours
AF
FITS
MEMORY
3
LAST 4Q
0
0
160
557
0
0
160
557
0
0
160
557
160,000
557,000
117
117
49
14
MCU
3
LAST 4Q
0
0
80
945
0
0
80
865
0
0
80
785
80,000
838,440
117
117
98
9
ATMEL
3
LAST 4Q
0
0
240
1,502
0
0
240
1,422
0
0
240
1,342
240,000
1,395,440
117
117
33
6
RELIABILITY MONITOR REPORT
5
Data Retention Bake
(sorted by TECHNOLOGY)
168 Hours
REJ
SS
500 Hours
REJ
SS
1K Hours
REJ
SS
TECH
QTR
63 K
3
LAST 4Q
0
0
160
400
0
0
160
400
0
0
160
400
160,000
400,000
117
117
49
20
58K
3
LAST 4Q
0
157
0
77
0
77
90,440
117
87
3
LAST 4Q
0
80
0
80
0
80
80,000
117
98
35K
3
LAST 4Q
0
0
80
708
0
0
80
708
0
0
80
628
80,000
668,000
117
117
98
12
34K
3
LAST 4Q
0
157
0
157
0
157
157,000
117
50
3
LAST 4Q
0
0
240
1,502
0
0
240
1,422
0
0
240
1,342
240,000
1,395,440
117
117
33
6
37K
ATMEL
Device-Hours AF
RELIABILITY MONITOR REPORT
6
FITS
Temperature Cycle
100 Cycles
REJ
SS
200 Cycles
REJ
SS
500 Cycles
REJ
SS
1K Cycles
REJ
SS
PACKAGE
QTR
BGA
3
LAST 4Q
0
80
0
80
0
80
0
80
0.00%
3
LAST 4Q
0
79
0
79
0
79
0
79
0.00%
MLF / QFN
3
LAST 4Q
0
0
80
157
0
0
80
152
0
0
80
80
0
0
80
80
0.00%
0.00%
PDIP
3
LAST 4Q
0
237
0
237
0
237
0
237
0.00%
SOIC
3
LAST 4Q
0
0
160
400
0
0
160
400
0
0
160
400
0
0
160
400
0.00%
0.00%
TQFP
3
LAST 4Q
0
231
0
72
0
0
0
0
0.00%
3
2
1
4
LAST 4Q
0
0
0
0
0
240
320
314
310
1,184
0
0
0
0
0
240
320
232
228
1,020
0
0
0
0
0
240
320
160
156
876
0
0
0
0
0
240
320
160
156
876
0.00%
0.00%
0.00%
0.00%
0.00%
LGA
ATMEL
RELIABILITY MONITOR REPORT
% Defective
7
Temperature Humidity Bias / HAST
Temperature Humidity Bias
HAST
168 Hours 500 Hours 1K Hours 100 Hours Device-Hours* % Defective
REJ SS REJ SS REJ SS REJ SS
PACKAGE
QTR
MLF / QFN
3
LAST 4Q
0
693
0
693
0
693
0
0
80
4,161
160,000
9,015,000
0.00%
0.00%
3
LAST 4Q
0
77
0
77
0
77
0
616
1,309,000
0.00%
3
LAST 4Q
0
308
0
308
0
154
0
0
231,000
0.00%
3
LAST 4Q
0
0
0
1,078
0
0
0
1,078
0
0
0
924
0
0
1,087
7,108
2,174,000
15,217,000
0.00%
0.00%
TQFP
TRANS
ATMEL
RELIABILITY MONITOR REPORT
8
Steam Pressure Pot
96 Hours
REJ
SS
168 Hours
REJ
SS
240 Hours
REJ
SS
PACKAGE
QTR
BGA
3
LAST 4Q
0
80
0
80
0
80
0.0%
3
LAST 4Q
0
80
0
80
0
80
0.0%
MLF / QFN
3
LAST 4Q
0
0
80
157
0
0
80
80
0
0
80
80
0.0%
0.0%
PDIP
3
LAST 4Q
0
237
0
237
0
237
0.0%
SOIC
3
LAST 4Q
0
0
160
400
0
0
160
400
0
0
160
400
0.0%
0.0%
TQFP
3
LAST 4Q
0
220
0
0
0
0
0.0%
3
LAST 4Q
0
0
240
1,174
0
0
240
877
0
0
240
877
0.00%
0.00%
LGA
ATMEL
RELIABILITY MONITOR REPORT
% Defective
9
Failure Rate Calculations
Failure Rate:
χ2
λ =
where,
λ
χ2
α
n
AF
DH
=
=
=
=
=
=
(1 −
α
100
, 2⋅n + 2 )
⋅ 109
2 ⋅ AF ⋅ DH
Failure Rate (FITS)
Failure Estimate
Confidence Level (60% or 90%)
Number of Failures
Overall Acceleration Factor (TAF x VAF)
Device Hours
Thermal Acceleration:
TAF
where,
TAF
EA
k
T
f
s
P
θJA
=
=
=
=
=
=
=
=
= e

ea 
1
1
⋅
−

k  Tf + ( Pf ⋅θ JAf ) Ts + ( Ps ⋅θ JAs ) 
Thermal Acceleration Factor
Activation Energy (eV)
Boltzman’s Constant (8.617 x 10-5 eV/°K)
Temperature (°K)
Field Conditions
Stress Conditions
Power Dissipation (W)
Thermal Resistance Coefficient - Junction to Ambient (°C/W)
Voltage Acceleration:
VAF
where,
VAF
Vs
Vn
Z
=
=
=
=
= eZ⋅
[ VS − Vn ]
Voltage Acceleration Factor
Stress Voltage (V)
Nominal Voltage (V)
Voltage Acceleration Constant (typically, 0.5 < Z < 1.0)
RELIABILITY MONITOR REPORT
Definitions
Data Retention Bake (DRB): This test is used to measure a device’s ability to retain
a charge for extended periods of time without applying voltage bias. Stressing
at high temperatures (150°C for plastic packages) accelerates any discharge
causing the memory state to change.
Failures In Time (FITS): This is the unit measure for expressing failure rates and is
identical to the expression PPM/K hours. For example, three failures out of a
million components tested for one thousand hours equates to 3 FITS.
High Temperature Operating Life (HTOL): The purpose of this test is to accelerate
thermally activated failure mechanisms through the use of high temperatures
(typically between 125°C and 150°C), increased voltage, and dynamic bias
conditions. Readouts at various time points are taken to determine the Early
Failure Rate (EFR) and Intrinsic Failure Rate (IFR). EFR is expressed in
defective parts per million (DPPM) and IFR is expressed in Failures in Time
(FITS at 55°C).
Highly Accelerated Stress Test (HAST): The purpose of this test is to evaluate a
plastic packaged component’s ability to withstand harsh environmental
conditions with extreme temperature and humidity levels. The parts are
stressed to high temperature (130°C) and relative humidity (85%RH) conditions
in a biased state to achieve maximum acceleration.
Steam Pressure Pot (SPP): The test is used to evaluate a plastic packaged
component’s ability to withstand severe conditions of pressure (15 psig),
temperature (121°C), and humidity (100%RH).
Temperature Cycle (TC): This test is used to measure a product’s sensitivity to
thermal stresses due to differences in expansion and contraction characteristics
of the die and mold compound by repeated alternating temperature dwells
between high and low temperature extremes.
Temperature Humidity Bias (THB): The purpose of this test (85°C/85%RH) is
identical to HAST. The only difference is that HAST accelerates THB by a factor
of 20:1 due to the increase in temperature during test.
RELIABILITY MONITOR REPORT
11