VISHAY SUD50N04-16P-E3

SUD50N04-16P
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
ID (A)a, c
0.016 at VGS = 10 V
20
0.018 at VGS = 4.5 V
20
Qg (Typ.)
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
RoHS
15.6 nC
COMPLIANT
APPLICATIONS
• LCD TV Inverter
• Secondary Synchronous Rectification
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD50N04-16P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 100 °C
ID
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 100 °C
PD
V
9.8b
6.8b
50
A
20c
2.5b
20
20
35.7
17.8
mJ
W
3.1b
1.5b
- 55 to 175
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
20c
20c
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
40
± 16
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Steady State
Symbol
RthJA
Typical
40
Maximum
50
Maximum Junction-to-Case
Steady State
RthJC
3.4
5.3
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Package limited.
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
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SUD50N04-16P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
mV/°C
- 5.4
0.8
2.2
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 100 °C
20
VDS ≥ 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
V
38
gfs
30
µA
A
VGS = 10 V, ID = 15 A
0.0125
0.016
VGS = 4.5 V, ID = 10 A
0.014
0.018
VDS = 15 V, ID = 15 A
58
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1655
VDS = 20 V, VGS = 0 V, f = 1 MHz
200
pF
152
VDS = 20 V, VGS = 10 V, ID = 30 A
39.2
60
15.6
24
VDS = 20 V, VGS = 4.5 V, ID = 30 A
4.2
f = 1 MHz
2.1
3.2
19
30
120
180
40
60
nC
5.5
td(on)
VDD = 20 V, RL = 0.66 Ω
ID ≅ 30 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
tf
36
55
td(on)
8
16
VDD = 20 V, RL = 0.66 Ω
ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
22
35
24
36
8
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
20
50
IS = 10 A
IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.84
1.2
V
25
38
ns
22
33
nC
15
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74477
S-81956-Rev. B, 25-Aug-08
SUD50N04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.6
80
VGS = 10 thru 4 V
I D - Drain Current (A)
I D - Drain Current (A)
64
48
3V
32
1.2
0.8
TC = 125 °C
0.4
25 °C
16
0
1
2
- 55 °C
0.0
0.0
0
3
0.6
Output Characteristics
2.4
3.0
Transfer Characteristics
0.020
120
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
g fs - Transconductance (S)
1.8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
80
25 °C
40
125 °C
0.018
0.016
VGS = 4.5 V
0.014
0.012
VGS = 10 V
0.010
0
0
8
16
24
32
0
40
2000
0.03
125 °C
0.02
25 °C
0.01
1500
1000
Coss
Crss
0
3
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
50
Ciss
500
0.00
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
40
ID - Drain Current (A)
0.04
2
30
On-Resistance vs. Drain Current
2500
1
20
ID - Drain Current (A)
0.05
0
10
Transconductance
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.2
0
8
16
24
32
40
VDS - Drain-to-Source Voltage (V)
Capacitance
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SUD50N04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
ID = 15 A
1.8
8
R DS(on) - On-Resistance
VDS = 20 V
6
VDS = 10 V
VDS = 30 V
4
VGS = 4.5 V
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 30 A
1.5
VGS = 10 V
1.2
0.9
2
0
0
8
16
24
32
0.6
- 50
40
- 25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Gate Charge
0.5
100
TJ = 150 °C
10
0.2
- 0.1
VGS(th) (V)
1
TJ = 25 °C
0.1
ID = 5 mA
- 0.4
- 0.7
0.01
ID = 250 µA
- 1.0
- 1.3
- 50
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
Source-Drain Diode Forward Voltage
100
100
80
80
60
60
Power (W)
Power (W)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
I S - Source Current (A)
0
40
40
20
20
0
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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100
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Case
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
SUD50N04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
I D - Drain Current (A)
10
100 µs
1 ms
10 ms
100 ms
1
10 s
0.1
I D - Drain Current (A)
Limited by RDS(on)*
Limited by RDS(on)*
100 µs
10
1 ms
10 ms
100 ms
1s
1
TC = 25 °C
Single Pulse
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
1
10
100
Safe Operating Area, Junction-to-Case
11
32
9
26
I D - Drain Current (A)
I D - Drain Current (A)
0.1
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
7
4
2
Package Limited
19
13
6
0
0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
www.vishay.com
5
SUD50N04-16P
Vishay Siliconix
3.0
30
2.4
24
1.8
18
Power (W)
Power (W)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.2
12
6
0.6
0
0.0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Power Derating*, Junction-to-Ambient
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating*, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 74477
S-81956-Rev. B, 25-Aug-08
SUD50N04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = RthJA = 45 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74477.
Document Number: 74477
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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