VISHAY SI7430DP

Si7430DP
Vishay Siliconix
New Product
N-Channel 150-V (D-S) WFET
FEATURES
PRODUCT SUMMARY
VDS (V)
150
rDS(on) (Ω)
ID (A)a
0.045 at VGS = 10 V
26
0.047 at VGS = 8 V
25
• Extremely Low Qgd WFET® Technology for
Reduced dV/dt, Qgd and Shoot-Through
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ)
23 nC
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
• Single-Ended Power Switch
PowerPAK SO-8
S
6.15 mm
D
5.15 mm
1
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
S
Bottom View
Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Unit
150
± 20
26
21
V
7.2b, c
5.7b, c
50
32
A
4.5b, c
20
20
64
44
mJ
W
5.2b, c
3.3b, c
- 55 to 150
TJ, Tstg
°C
260
THERMAL RESISTANCE RATINGS
Parameter
b, f
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
t ≤ 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
Maximum
Unit
19
1.5
24
1.8
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 74282
S-61293-Rev. A, 24-Jul-06
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Si7430DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = 250 µA
150
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS /TJ
VGS(th) Temperature Coefficient
ΔVGS(th) /TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
gfs
V
172
mV/°C
- 10
2.5
4.5
V
± 100
nA
VDS = 150 V, VGS = 0 V
1
VDS = 150 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 10 V, VGS = 10 V
µA
A
30
VGS = 10 V, ID = 5 A
0.036
0.045
VGS = 8 V, ID = 5 A
0.0375
0.047
VDS = 15 V, ID = 5 A
23
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1735
VDS = 50 V, VGS = 0 V, f = 1 MHz
160
VDS = 75 V, VGS = 10 V, ID = 5 A
28.5
43
35
pF
37
Total Gate Charge
Qg
23
Gate-Source Charge
Qgs
VDS = 75 V, VGS = 8 V, ID = 5 A
8
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
0.85
1.3
14
21
12
18
6.5
td(on)
Turn-on Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
33
tf
6
10
td(on)
16
24
12
18
tr
Turn-Off Delay Time
Fall Time
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
22
td(off)
nC
VDD = 50 V, RL = 10 Ω
ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω
tf
20
30
7
12
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
32
ISM
VSD
50
IS = 3 A
0.77
1.2
A
V
Body Diode Reverse Recovery Time
trr
63
95
ns
Body Diode Reverse Recovery Charge
Qrr
110
165
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 5 A, di/dt = 100 A/µs, TJ = 25 °C
49
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74282
S-61293-Rev. A, 24-Jul-06
Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
1.2
60
I D – Drain Current (A)
I D – Drain Current (A)
VGS = 10 thru 7 V
48
VGS = 6 V
36
24
TC = 125 °C
0.6
TC = 25 °C
0.3
VGS = 5 V
12
0.9
TC = - 55 °C
0
0.0
0
1
2
3
4
5
0
2
VDS – Drain-to-Source Voltage (V)
8
10
Transfer Characteristics
2000
0.051
1600
C – Capacitance (pF)
0.055
0.047
VGS = 8 V
0.043
Ciss
1200
800
VGS = 10 V
0.039
400
0.035
0
0
10
20
30
40
50
60
Coss
Crss
0
20
ID – Drain Current (A)
40
60
80
100
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.5
10
ID = 5 A
ID = 5 A
VDS = 50 V
2.1
8
rDS(on) – On-Resistance
(Normalized)
V GS – Gate-to-Source Voltage (V)
6
VGS – Gate-to-Source Voltage (V)
Output Characteristics
rDS(on) – On-Resistance (Ω)
4
VDS = 75 V
6
VDS = 100 V
4
1.7
VGS = 10 V
VGS = 8 V
1.3
0.9
2
0
0
6
12
18
Qg – Total Gate Charge (nC)
Gate Charge
Document Number: 74282
S-61293-Rev. A, 24-Jul-06
24
30
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
0.20
I S − Source Current (A)
10
rDS(on) – Drain-to-Source On-Resistance (Ω)
100
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.16
0.12
TJ = 125 °C
0.08
TJ = 25 °C
0.04
0.00
0
0.2
0.4
0.6
0.8
1
0
1.2
6
8
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
200
0.5
160
ID = 5 mA
- 0.5
120
80
- 1.0
- 1.5
- 50
4
VGS – Gate-to-Source Voltage (V)
1.0
0.0
2
VSD − Source-to-Drain Voltage (V)
Power (W)
VGS(th) (V)
ID = 5 A
40
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ – Temperature ( C)
Threshold Voltage
I D – Drain Current (A)
100
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
*Limited by rDS(on)
10
1 ms
1
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
0.01
0.01
0.1
*VGS
dc
1
10
100
1000
VDS – Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74282
S-61293-Rev. A, 24-Jul-06
Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
30
ID – Drain Current (A)
24
18
12
6
0
0
25
50
75
100
125
150
TC – Case Temperature (°C)
85
2.5
68
2.0
Power (W)
Power (W)
Current Derating*
51
1.5
34
1.0
17
0.5
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
TC – Case Temperature (°C)
TC – Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
125
150
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74282
S-61293-Rev. A, 24-Jul-06
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Si7430DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
0.02
3. TJM – T = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10-3
10-2
Square Wave Pulse Duration (sec)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74282.
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Document Number: 74282
S-61293-Rev. A, 24-Jul-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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