Si7430DP Vishay Siliconix New Product N-Channel 150-V (D-S) WFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Extremely Low Qgd WFET® Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested • 100 % UIS Tested Qg (Typ) 23 nC RoHS COMPLIANT APPLICATIONS • Primary Side Switch • Single-Ended Power Switch PowerPAK SO-8 S 6.15 mm D 5.15 mm 1 S 2 S 3 G 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Limit Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit 150 ± 20 26 21 V 7.2b, c 5.7b, c 50 32 A 4.5b, c 20 20 64 44 mJ W 5.2b, c 3.3b, c - 55 to 150 TJ, Tstg °C 260 THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 sec Steady State Symbol RthJA RthJC Typical Maximum Unit 19 1.5 24 1.8 °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 74282 S-61293-Rev. A, 24-Jul-06 www.vishay.com 1 Si7430DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 150 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ VGS(th) Temperature Coefficient ΔVGS(th) /TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs V 172 mV/°C - 10 2.5 4.5 V ± 100 nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 10 V, VGS = 10 V µA A 30 VGS = 10 V, ID = 5 A 0.036 0.045 VGS = 8 V, ID = 5 A 0.0375 0.047 VDS = 15 V, ID = 5 A 23 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1735 VDS = 50 V, VGS = 0 V, f = 1 MHz 160 VDS = 75 V, VGS = 10 V, ID = 5 A 28.5 43 35 pF 37 Total Gate Charge Qg 23 Gate-Source Charge Qgs VDS = 75 V, VGS = 8 V, ID = 5 A 8 Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz 0.85 1.3 14 21 12 18 6.5 td(on) Turn-on Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time 33 tf 6 10 td(on) 16 24 12 18 tr Turn-Off Delay Time Fall Time VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 22 td(off) nC VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω tf 20 30 7 12 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 32 ISM VSD 50 IS = 3 A 0.77 1.2 A V Body Diode Reverse Recovery Time trr 63 95 ns Body Diode Reverse Recovery Charge Qrr 110 165 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, di/dt = 100 A/µs, TJ = 25 °C 49 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74282 S-61293-Rev. A, 24-Jul-06 Si7430DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1.2 60 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 7 V 48 VGS = 6 V 36 24 TC = 125 °C 0.6 TC = 25 °C 0.3 VGS = 5 V 12 0.9 TC = - 55 °C 0 0.0 0 1 2 3 4 5 0 2 VDS – Drain-to-Source Voltage (V) 8 10 Transfer Characteristics 2000 0.051 1600 C – Capacitance (pF) 0.055 0.047 VGS = 8 V 0.043 Ciss 1200 800 VGS = 10 V 0.039 400 0.035 0 0 10 20 30 40 50 60 Coss Crss 0 20 ID – Drain Current (A) 40 60 80 100 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.5 10 ID = 5 A ID = 5 A VDS = 50 V 2.1 8 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 6 VGS – Gate-to-Source Voltage (V) Output Characteristics rDS(on) – On-Resistance (Ω) 4 VDS = 75 V 6 VDS = 100 V 4 1.7 VGS = 10 V VGS = 8 V 1.3 0.9 2 0 0 6 12 18 Qg – Total Gate Charge (nC) Gate Charge Document Number: 74282 S-61293-Rev. A, 24-Jul-06 24 30 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7430DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.20 I S − Source Current (A) 10 rDS(on) – Drain-to-Source On-Resistance (Ω) 100 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.16 0.12 TJ = 125 °C 0.08 TJ = 25 °C 0.04 0.00 0 0.2 0.4 0.6 0.8 1 0 1.2 6 8 10 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 200 0.5 160 ID = 5 mA - 0.5 120 80 - 1.0 - 1.5 - 50 4 VGS – Gate-to-Source Voltage (V) 1.0 0.0 2 VSD − Source-to-Drain Voltage (V) Power (W) VGS(th) (V) ID = 5 A 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ – Temperature ( C) Threshold Voltage I D – Drain Current (A) 100 0.1 1 10 Time (sec) Single Pulse Power, Junction-to-Ambient *Limited by rDS(on) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.01 0.1 *VGS dc 1 10 100 1000 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74282 S-61293-Rev. A, 24-Jul-06 Si7430DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 30 ID – Drain Current (A) 24 18 12 6 0 0 25 50 75 100 125 150 TC – Case Temperature (°C) 85 2.5 68 2.0 Power (W) Power (W) Current Derating* 51 1.5 34 1.0 17 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 TC – Case Temperature (°C) TC – Case Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 125 150 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74282 S-61293-Rev. A, 24-Jul-06 www.vishay.com 5 Si7430DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM – T = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74282. www.vishay.com 6 Document Number: 74282 S-61293-Rev. A, 24-Jul-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1