Si1988DH Vishay Siliconix New Product Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V a 1.3 Qg (Typ) • TrenchFET® Power MOSFET APPLICATIONS 1.6 nC RoHS COMPLIANT • Load Switch for Portable Applications SOT-363 SC-70 (6-LEADS) D2 D1 S1 1 6 2 5 D1 G1 D2 3 4 G2 CF XX YY Marking Code S2 G2 G1 Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1988DH-T1-E3 (Lead (Pb)-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 20 ±8 TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation ID TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) IS PD d, e V 1.3a 1.3a 1.3a, b, c 1.3a, b, c 4 1.0 IDM Pulsed Drain Current Unit 0.61b, c 1.25 0.8 0.74b, c 0.47b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W. Document Number: 74296 S-62109-Rev. A, 23-Oct-06 t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W www.vishay.com 1 Si1988DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 20 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 19.7 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 ns VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VDS ≤ 5 V, VGS = 4.5 V - 2.4 0.4 4 µA A VGS = 4.5 V, ID = 1.4 A 0.139 0.168 VGS = 2.5 V, ID = 1.3 A 0.165 0.200 VGS = 1.8 V, ID = 0.4 A 0.205 0.250 VDS = 4 V, ID = 1.4 A 4 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 110 VDS = 10 V, VGS = 0 V, f = 1 MHz 11 VDS = 10 V, VGS = 8 V, ID = 1.6 A 2.7 4.1 1.6 2.4 VDS = 10 V, VGS = 4.5 V, ID = 1.6 A 0.3 tr f = 1 MHz VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω Ω 4 8 12 20 30 15 25 tf 10 15 td(on) 5 10 11 20 10 15 6 10 tr td(off) nC 0.25 td(on) td(off) pF 25 VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 8 V, Rg = 1 Ω tr ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1 4 IS = 1.3 A, VGS = 0 V IF = 1.3 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 20 40 ns 20 40 nC 16 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74296 S-62109-Rev. A, 23-Oct-06 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1.0 VGS = 5 thru 2 V I D – Drain Current (A) I D – Drain Current (A) 4 3 VGS = 1.5 V 2 0.8 TC = - 55 °C 0.6 TC = 25 °C 0.4 1 0.2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.3 VDS – Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.400 160 0.350 C – Capacitance (pF) rDS(on) – Drain-to-Source On-Resistance (Ω) 0.6 0.300 VGS = 1.8 V 0.250 0.200 VGS = 2.5 V 120 Ciss 80 40 Coss 0.150 VGS = 4.5 V 0.100 Crss 0 0 1 2 3 4 0 4 VGS – Gate-to-Source Voltage (V) 8 12 16 20 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.80 8 7 1.60 6 rDS(on) – On-Resi stance (Normalized) V GS – Gate-to-Source Voltage (V) ID = 1.6 A VDS = 16 V 5 VDS = 10 V 4 3 2 1.40 1.20 1.00 0.80 1 0 0.0 ID = 1.6 A VGS = 1.8, 2.5, 4.5 V 0.5 1.0 1.5 2.0 Qg – Total Gate Charge (nC) Gate Charge Document Number: 74296 S-62109-Rev. A, 23-Oct-06 2.5 3.0 0.60 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.400 rDS(on) – Drain-to-Source On-Resistance (Ω) I S − Source Current (A) 10 TJ = - 150 °C 1 TJ = - 25 °C 0.100 ID = 1.4 A 0.350 0.300 TJ = 125 °C 0.250 0.200 TJ = 25 °C 0.150 0.100 0 0.6 0.8 0 1.2 1 0.2 0.4 VSD − Source-to-Drain Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Forward Diode Voltage On-Resistance vs. Gate-Source Voltage 0.9 5 0.8 4 Power (W) VGS(th) (V) 0.7 ID = 250 µA 0.6 3 2 0.5 1 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 TJ – Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power 100 600 10 *Limited by rDS(on) I D – Drain Current (A) 100 µs 1 1s 10 ms 0.1 T A = 25 °C Single Pulsed 100 ms 1 ms 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74296 S-62109-Rev. A, 23-Oct-06 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1.4 2.5 1.2 Power Dissipation (W) ID – Drain Current (A) 2.0 1.5 Package Limited 1.0 1.0 0.8 0.6 0.4 0.5 0.2 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC – Case Temperature (°C) TC – Case Temperature (°C) Power Derating Current Derating* *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.2 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170 °C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 74296 S-62109-Rev. A, 23-Oct-06 www.vishay.com 5 Si1988DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74296. www.vishay.com 6 Document Number: 74296 S-62109-Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1