Si5484DU Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile Qg (Typ.) 16.5 nC 12 PowerPAK ChipFET Single • Load Switch, PA Switch, and for Portable Applications 2 D D 3 D D 4 Marking Code D D G D 7 AF XXX Lot Traceability and Date Code S 6 COMPLIANT APPLICATIONS 1 8 RoHS S 5 G Part # Code S Bottom View Ordering Information: Si5484DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Limit 20 ± 12 Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak V 12a 12a 11.4b, c 9.1b, c 40 ID IDM Continuous Source-Drain Diode Current Unit A 12a 2.6b, c 31 20 IS PD W 3.1b, c 2b, c - 55 to 150 260 TJ, Tstg Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 34 3 Maximum 40 4 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73589 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 Si5484DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 18.5 mV/°C - 4.4 0.6 2 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V 30 A VGS = 4.5 V, ID = 7.6 A 0.013 0.016 VGS = 2.5 V, ID = 6.6 A 0.017 0.021 VDS = 10 V, ID = 7.6 A 37 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 35.5 55 Total Gate Charge Qg 16.5 25 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd Gate Resistance Rg 1600 VDS = 10 V, VGS = 0 V, f = 1 MHz Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 320 pF 210 VDS = 10 V, VGS = 10 V, ID = 11.4 A Turn-on Delay Time VDS = 10 V, VGS = 4.5 V, ID = 11.4 A f = 1 MHz Ω 10 15 tr 30 45 tf VDD = 10 V, RL = 1.1 Ω ID ≅ 9.1 A, VGEN = 4.5 V, Rg = 1 Ω td(on) tr td(off) tf VDD = 10 V, RL = 1.1 Ω ID ≅ 9.3 A, VGEN = 10 V, Rg = 1 Ω nC 4 4.5 td(on) td(off) Ω S Dynamicb Input Capacitance Rise Time µA 30 45 10 15 5 10 15 25 35 55 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 40 IS = 9.1 A, VGS = 0 V IF = 9.1 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 30 60 ns 15 30 nC 12 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73589 S-81448-Rev. B, 23-Jun-08 Si5484DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 40 VGS = 5 thru 2.5 V 16 ID - Drain Current (A) I D - Drain Current (A) 32 24 16 2V 12 8 TC = 125 °C 4 8 TC = 25 °C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 Output Characteristics 2.0 2.5 Transfer Characteristics 0.040 2500 0.035 2000 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 1.5 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.030 0.025 VGS = 2.5 V 0.020 VGS = 4.5 V 0.015 C iss 1500 1000 C oss 500 0.010 C rss 0 0 8 16 24 32 40 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 10 I D = 11.4 A 1.4 8 VDS = 10 V 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.0 VDS = 16 V 4 2 VGS = 10 V ID = 7.6 A 1.2 1.0 0.8 0.6 0 0 8 16 24 32 40 0.4 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73589 S-81448-Rev. B, 23-Jun-08 150 www.vishay.com 3 Si5484DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 R DS(on) - Drain-to-Source On-Resistance (mΩ) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 I D = 7.6 A 0.04 0.03 TA = 125 °C 0.02 TA = 25 °C 0.01 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.4 50 1.3 1.2 40 ID = 250 µA 1.0 30 Power (W) VGS(th) (V) 1.1 0.9 0.8 20 0.7 0.6 10 0.5 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* BVDSS Limited 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73589 S-81448-Rev. B, 23-Jun-08 Si5484DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 40 30 Power Dissipation (W) I D - Drain Current (A) 32 24 16 Package Limited 25 20 15 10 8 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73589 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 Si5484DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 t 1. Duty Cycle, D = 1 t2 2. Per Unit Base = R thJA = 75 °C/W 0.02 3. TJM - TA = PDM Z thJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73589. www.vishay.com 6 Document Number: 73589 S-81448-Rev. B, 23-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1