;6
21
BGU8H1
SiGe:C low-noise amplifier MMIC for LTE
Rev. 2 — 28 April 2016
Product data sheet
1. General description
The BGU8H1 is a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a
small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external
matching inductor.
The BGU8H1 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance. At low jamming power levels, it delivers 13 dB
gain at a noise figure of 0.9 dB. During high-power levels, it temporarily increases its bias
current to improve sensitivity.
The BGU8H1 is optimized for 2300 MHz to 2690 MHz.
2. Features and benefits
Operating frequency from 2300 MHz to 2690 MHz
Noise figure = 0.9 dB
Gain = 13 dB
High input 1 dB compression point of 1 dBm
High in band IP3i of 8 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.0 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pin leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
3. Applications
LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules
4. Quick reference data
Table 1.
Quick reference data
f = 2350 MHz; VCC = 2.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 3.3 nH inductor;
unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
1.5
-
3.1
V
ICC
supply current
3.0
5.0
7.0
mA
Gp
power gain
[1]
-
13
-
dB
[1][2][3]
-
0.9
1.5
dB
NF
noise figure
Pi(1dB)
input power at 1 dB gain compression
[1][3]
IP3i
input third-order intercept point
[1][3]
[1]
E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[2]
PCB losses are subtracted.
[3]
Guaranteed by device design; not tested in production.
7
3
-
dBm
1
6
-
dBm
5. Ordering information
Table 2.
Ordering information
Type number
BGU8H1
Package
Name
Description
Version
XSON6
plastic extremely thin small outline package; no leads; 6 terminals; SOT1232
body 1.1 0.7 0.37 mm
6. Marking
Table 3.
Marking codes
Type number
Marking code
BGU8H1
F
BGU8H1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
7. Block diagram
9&&
%*8[
(1$%/(
5)B,1
%,$6&21752/
5)B287
DDD
Fig 1.
Block diagram
8. Pinning information
8.1 Pinning
*1'B5)
5)B287
5)B,1
9&&
(1$%/(
*1'
7UDQVSDUHQWWRSYLHZ
DDD
Fig 2.
Pin configuration
8.2 Pin description
Table 4.
BGU8H1
Product data sheet
Pin description
Symbol
Pin
Description
GND
1
ground
VCC
2
supply voltage
RF_OUT
3
RF output
GND_RF
4
ground RF
RF_IN
5
RF input
ENABLE
6
enable
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
3 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute maximum ratings are given as limiting values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol
Parameter
Conditions
VCC
supply voltage
RF input AC coupled
VI(ENABLE)
VI(RF_IN)
input voltage on pin ENABLE
input voltage on pin RF_IN
VI(RF_OUT)
input voltage on pin RF_OUT
Pi
input power
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
VESD
electrostatic discharge voltage
Min
Max
Unit
[1]
0.5
+5.0
V
VI(ENABLE) < VCC + 0.6 V
[1][2]
0.5
+5.0
V
DC; VI(RF_IN) < VCC + 0.6 V
[1][2]
0.5
+5.0
V
[1][2][3]
0.5
+5.0
V
-
26
dBm
-
55
mW
65
+150
C
DC; VI(RF_OUT) < VCC + 0.6 V
[1]
Tsp 130 C
-
150
C
Human Body Model (HBM) according to
ANSI/ESDA/JEDEC standard JS-001
-
2
kV
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
-
1
kV
[1]
Stressed with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit.
[2]
Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V.
[3]
The RF output is AC coupled through internal DC blocking capacitors.
10. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
Min
Typ
Max
Unit
VCC
supply voltage
Conditions
1.5
-
3.1
V
Tamb
ambient temperature
40
+25
+85
C
VI(ENABLE)
input voltage on pin ENABLE
OFF state
-
-
0.3
V
ON state
0.8
-
-
V
11. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to
solder point
BGU8H1
Product data sheet
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
Typ
Unit
225
K/W
© NXP Semiconductors N.V. 2016. All rights reserved.
4 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
12. Characteristics
Table 8.
Characteristics at VCC = 1.8 V
2300 MHz f 2690 MHz; VCC = 1.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 3.3 nH inductor;
unless otherwise specified.
Symbol Parameter
supply current
ICC
power gain
Gp
Conditions
Min
Typ
VI(ENABLE) 0.8 V
2.8
4.8
6.8
mA
VI(ENABLE) 0.3 V
-
-
1
A
-
13.0 -
dB
f = 2350 MHz
[1]
f = 2500 MHz
RLin
RLout
ISL
input return loss
output return loss
isolation
NF
noise figure
Pi(1dB)
input power at 1 dB
gain compression
input third-order intercept point
IP3i
K
Rollett stability factor
ton
turn-on time
toff
turn-off time
f = 2655 MHz
-
12.0 -
dB
f = 2350 MHz
[1]
-
8
-
dB
f = 2655 MHz
[2]
-
8
-
dB
f = 2350 MHz
[1]
-
20
-
dB
f = 2655 MHz
[2]
-
20
-
dB
f = 2350 MHz
[1]
-
20
-
dB
f = 2655 MHz
[2]
-
20
-
dB
f = 2350 MHz
[1][3][4]
-
0.9
1.5
dB
f = 2655 MHz
[2][3]
-
1.1
-
dB
f = 2350 MHz
[1][4]
12
8
-
dBm
f = 2655 MHz
[2]
-
7
-
dBm
f = 2350 MHz
[1][4]
3
+2
-
dBm
f = 2655 MHz
[2]
-
5
-
dBm
1
-
-
-
time from VI(ENABLE) ON to 90 % of the gain
-
-
4
s
time from VI(ENABLE) OFF to 10 % of the gain
-
-
1
s
E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[2]
E-UTRA operating band 7 (2620 MHz to 2690 MHz).
[3]
PCB losses are subtracted.
[4]
Guaranteed by device design; not tested in production.
Product data sheet
10.5 12.5 14.5 dB
[2]
[1]
BGU8H1
Max Unit
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
5 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
Table 9.
Characteristics at VCC = 2.8 V
2300 MHz f 2690 MHz; VCC = 2.8 V; VI(ENABLE) 0.8 V; Tamb = 25 C; input matched to 50 using a 3.3 nH inductor;
unless otherwise specified.
Symbol Parameter
supply current
ICC
Conditions
Min
Typ
Max Unit
VI(ENABLE) 0.8 V
3.0
5.0
7.0
mA
VI(ENABLE) 0.3 V
power gain
Gp
-
-
1
A
[1]
-
13
-
dB
f = 2655 MHz
[2]
-
12.5 -
dB
f = 2350 MHz
[1]
-
9
-
dB
f = 2655 MHz
[2]
-
9
-
dB
f = 2350 MHz
[1]
-
20
-
dB
f = 2655 MHz
[2]
-
20
-
dB
f = 2350 MHz
[1]
-
22
-
dB
f = 2655 MHz
[2]
-
22
-
dB
f = 2350 MHz
[1][3][4]
-
0.9
1.5
dB
f = 2655 MHz
[2][3]
-
1.0
-
dB
f = 2350 MHz
[1][4]
7
3
-
dBm
f = 2655 MHz
[2]
-
1
-
dBm
f = 2350 MHz
[1][4]
1
6
-
dBm
f = 2655 MHz
[2]
-
8
-
dBm
1
-
-
-
f = 2350 MHz
f = 2500 MHz
RLin
RLout
ISL
input return loss
output return loss
isolation
NF
noise figure
Pi(1dB)
input power at 1 dB
gain compression
input third-order intercept point
IP3i
10.8 12.8 14.8 dB
K
Rollett stability factor
ton
turn-on time
time from VI(ENABLE) ON to 90 % of the gain
-
-
4
s
toff
turn-off time
time from VI(ENABLE) OFF to 10 % of the gain
-
-
1
s
[1]
E-UTRA operating band 40 (2300 MHz to 2400 MHz).
[2]
E-UTRA operating band 7 (2620 MHz to 2690 MHz).
[3]
PCB losses are subtracted.
[4]
Guaranteed by device design; not tested in production.
BGU8H1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
6 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
13. Package outline
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Fig 3.
(XURSHDQ
SURMHFWLRQ
Package outline SOT1232 (XSON6)
BGU8H1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
7 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
14. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
15. Abbreviations
Table 10.
Abbreviations
Acronym
Description
ESD
ElectroStatic Discharge
E-UTRA
Evolved UMTS Terrestrial Radio Access
HBM
Human Body Model
LNA
Low-Noise Amplifier
LTE
Long Term Evolution
MMIC
Monolithic Microwave Integrated Circuit
PCB
Printed-Circuit Board
SiGe:C
Silicon Germanium Carbon
16. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGU8H1 v.2
20160428
Product data sheet
-
BGU8H1 v.1
Modifications:
BGU8H1 v.1
BGU8H1
Product data sheet
•
•
•
Table 5: updated value input power; added Table note [1]
Table 8: updated Gp power gain with f = 2500 MHz; added Table note [4]
Table 9: updated Gp power gain with f = 2500 MHz; added Table note [4]
20140603
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
-
-
© NXP Semiconductors N.V. 2016. All rights reserved.
8 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGU8H1
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
9 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGU8H1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 April 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
10 of 11
BGU8H1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC for LTE
19. Contents
1
2
3
4
5
6
7
8
8.1
8.2
9
10
11
12
13
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 April 2016
Document identifier: BGU8H1