;6
21
BGS8M2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 2 — 29 March 2016
Product data sheet
1. General description
The BGS8M2 is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver
applications, available in a small plastic 6-pin extremely thin leadless package. The
BGS8M2 requires one external matching inductor.
The BGS8M2 delivers system-optimized gain for both primary and diversity applications
where sensitivity improvement is required. The high linearity of these low noise devices
ensures the required receive sensitivity independent of cellular transmit power level in
FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the
BGS8M2 can be switched off to operate in bypass mode at a 1 A current, to lower power
consumption.
The BGS8M2 is optimized for 1805 MHz to 2200 MHz.
2. Features and benefits
Operating frequency from 1805 MHz to 2200 MHz
Noise figure = 0.85 dB
Gain 14.4 dB
High input 1 dB compression point of 3.5 dBm
Bypass switch insertion loss of 2.2 dB
High in band IP3i of 3.5 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.8 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
3. Applications
LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules
4. Quick reference data
Table 1.
Quick reference data
1805 MHz f 2200 MHz, VCC = 2.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 3.9 nH inductor in
series. Unless otherwise specified.
Symbol
Parameter
VCC
supply voltage
ICC
supply current
Conditions
in gain mode
power gain
NF
noise figure
Typ
Max
Unit
1.5
-
3.1
V
3.8
5.8
7.8
mA
-
-
1
A
in gain mode; f = 1960 MHz
[1][3]
12.4
14.4
16.4
dB
in bypass mode; f = 1960 MHz
[1][3]
4.0
2.2
0.7
dB
-
0.85
1.4
dB
in bypass mode; VI(CTRL) < 0.3 V
Gp
Min
in gain mode; f = 1960 MHz
[1][2][3]
7.5
3.5
-
dBm
1.5
3.5
-
dBm
Pi(1dB)
input power at 1 dB
gain compression
in gain mode; f = 1960 MHz
[1][3]
IP3i
input third-order intercept point
in gain mode; f = 1960 MHz
[1][3]
[1]
E-UTRA operating band 2 (1930 MHz to 1990 MHz).
[2]
PCB losses are subtracted.
[3]
Guaranteed by device design; not tested in production.
5. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BGS8M2
XSON6
plastic extremely thin small outline package; no leads; 6 terminals; SOT1232
body 1.1 0.7 0.37 mm
OM17006
EVB
BGS8M2 evaluation board
-
6. Marking
Table 3.
Marking codes
Type number
Marking code
BGS8M2
N
BGS8M2
Product data sheet
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Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
7. Block diagram
9&&
%*60
&75/
%,$6&21752/
5)B,1
5)B287
DDD
Fig 1.
Block diagram
8. Pinning information
8.1 Pinning
*1'B5)
5)B287
5)B,1
9&&
&75/
*1'
7UDQVSDUHQWWRSYLHZ
DDD
Fig 2.
Pin configuration
8.2 Pin description
Table 4.
BGS8M2
Product data sheet
Pinning
Symbol
Pin
Description
GND
1
ground
VCC
2
supply voltage
RF_OUT
3
RF out
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
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BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Table 4.
Pinning …continued
Symbol
Pin
Description
GND_RF
4
ground RF
RF_IN
5
RF in
CTRL
6
gain control, switch between gain and bypass mode
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
See Section 18.3 “Disclaimers”, paragraph “Limiting values”.
Symbol
Parameter
Conditions
Min
Max
Unit
[1]
0.5
5.0
V
supply voltage
RF input AC coupled
VI(CTRL)
input voltage on pin CTRL
VI(CTRL) < VCC 0.6 V
[1][2]
0.5
5.0
V
VI(RF_IN)
input voltage on pin RF_IN
DC, VI(RF_IN) < VCC 0.6 V
[1][2]
0.5
5.0
V
input voltage on pin RF_OUT
DC, VI(RF_OUT) < VCC 0.6 V
[1][2][3]
0.5
5.0
V
-
26
dBm
VCC
VI(RF_OUT)
[1]
Pi
input power
Ptot
total power dissipation
-
55
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
VESD
electrostatic discharge voltage
Human Body Model (HBM) according to
ANSI/ESDA/JEDEC standard JS-001
-
2
kV
Charged Device Model (CDM) according to
JEDEC standard JESD22-C101C
-
1
kV
[1]
Tsp 130 C
Stresses with pulses of 1 s in duration. VCC connected to a power supply of 2.8 V with 500 mA current limit.
[2]
Warning: Due to internal ESD diode protection, to avoid excess current, the applied DC voltage must not exceed VCC + 0.6 V or 5.0 V.
[3]
The RF input and RF output are AC coupled through internal DC blocking capacitors.
10. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
VCC
supply voltage
Tamb
ambient temperature
VI(CTRL)
input voltage on pin CTRL
Conditions
Min
Typ
Max
Unit
1.5
-
3.1
V
40
25
85
C
bypass mode
-
-
0.3
V
ON state
0.8
-
-
V
Typ
Unit
225
K/W
11. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to
solder point
BGS8M2
Product data sheet
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
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BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
12. Characteristics
Table 8.
Characteristics at VCC = 1.8 V
1805 MHz f 2200 MHz, VCC = 1.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 3.9 nH inductor in
series. Unless otherwise specified.
Symbol Parameter
Conditions
between gain mode and bypass mode
phase variation
f = 1843 MHz
f = 1960 MHz
[1]
f = 2140 MHz
Min
Typ
Max Unit
-
-
-
5.0
-
+5.0 deg
-
-
-
deg
7.6
mA
deg
Gain mode
ICC
Gp
RLin
RLout
ISL
NF
Pi(1dB)
IP3i
supply current
power gain
input return loss
output return loss
isolation
noise figure
input power at 1 dB
gain compression
input third-order intercept point
3.6
5.6
f = 1843 MHz
[1][2]
12.3
14.3 16.3 dB
f = 1960 MHz
[4]
12.0
14.0 16.0 dB
f = 2140 MHz
[1][4]
11.2
13.2 15.2 dB
f = 1843 MHz
[2]
-
5.5
-
dB
f = 1960 MHz
[3]
-
6.0
-
dB
f = 2140 MHz
[4]
-
7.0
-
dB
f = 1843 MHz
[2]
-
11.0
-
dB
f = 1960 MHz
[3]
-
11.0
-
dB
f = 2140 MHz
[4]
-
11.0
-
dB
f = 1843 MHz
[2]
-
23.0 -
dB
f = 1960 MHz
[3]
-
23.0 -
dB
f = 2140 MHz
[4]
-
23.0 -
dB
f = 1843 MHz
[1][2][5]
-
0.80 1.4
dB
f = 1960 MHz
[1][3][5]
-
0.85 1.4
dB
f = 2140 MHz
[1][4][5]
-
0.95 1.5
dB
f = 1843 MHz
[1][2]
12.0 8.0 -
dBm
f = 1960 MHz
[1][4]
11.0 7.0 -
dBm
f = 2140 MHz
[1][5]
10.0 6.0 -
dBm
f = 1843 MHz
[1][2]
3.0
+2.0 -
dBm
f = 1960 MHz
[1][3]
2.5
+2.5 -
dBm
f = 2140 MHz
[1]
2.0
+3.0 -
dBm
1
-
-
-
K
Rollett stability factor
ton
turn-on time
time from VI(CTRL) ON to 90 % of the gain
-
-
1.7
s
toff
turn-off time
time from VI(CTRL) OFF to 10 % of the gain
-
-
0.6
s
1
A
Bypass mode
ICC
Gp
supply current
power gain
BGS8M2
Product data sheet
VI(CTRL) < 0.3 V
-
-
f = 1843 MHz
[1][2]
3.6
2.1 0.6 dB
f = 1960 MHz
[1][3]
4.0
2.2 0.7 dB
f = 2140 MHz
[1][4]
4.0
2.5 1.0 dB
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
5 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Table 8.
Characteristics at VCC = 1.8 V …continued
1805 MHz f 2200 MHz, VCC = 1.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 3.9 nH inductor in
series. Unless otherwise specified.
Symbol Parameter
RLin
RLout
input return loss
output return loss
Conditions
Min
Typ
f = 1843 MHz
[2]
-
12.0 -
dB
f = 1960 MHz
[3]
-
11.0
-
dB
f = 2140 MHz
[4]
-
10.0 -
dB
f = 1843 MHz
[2]
-
10.0 -
dB
f = 1960 MHz
[3]
-
9.5
-
dB
f = 2140 MHz
[4]
-
9.0
-
dB
[1]
Guaranteed by device design; not tested in production.
[2]
E-UTRA operating band 3 (1805 MHz to 1880 MHz).
[3]
E-UTRA operating band 2 (1930 MHz to 1990 MHz).
[4]
E-UTRA operating band 1 (2110 MHz to 2170 MHz).
[5]
PCB losses are subtracted.
Max Unit
Table 9.
Characteristics at VCC = 2.8 V
1805 MHz f 2200 MHz, VCC = 2.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 3.9 nH inductor in
series. Unless otherwise specified.
Symbol Parameter
Conditions
between gain mode and bypass mode
phase variation
f = 1843 MHz
f = 1960 MHz
[1]
f = 2140 MHz
Min
Typ
-
-
Max Unit
-
deg
5.0 -
5.0 deg
-
-
-
deg
3.8
5.8
7.8
mA
Gain mode
ICC
supply current
Gp
power gain
RLin
RLout
ISL
NF
Pi(1dB)
input return loss
output return loss
isolation
noise figure
input power at 1 dB
gain compression
BGS8M2
Product data sheet
f = 1843 MHz
[1][2]
12.5 14.5 16.5 dB
f = 1960 MHz
[3]
12.4 14.4 16.4 dB
f = 2140 MHz
[1][4]
11.7
13.7 15.7 dB
f = 1843 MHz
[2]
-
5.5
-
dB
f = 1960 MHz
[3]
-
6.5
-
dB
f = 2140 MHz
[4]
-
7.5
-
dB
f = 1843 MHz
[2]
-
12.0 -
dB
f = 1960 MHz
[3]
-
12.0 -
dB
f = 2140 MHz
[4]
-
11.0
-
dB
f = 1843 MHz
[2]
-
25.0 -
dB
f = 1960 MHz
[3]
-
24.0 -
dB
f = 2140 MHz
[4]
-
23.0 -
dB
f = 1843 MHz
[1][2][5]
-
0.80 1.4
dB
f = 1960 MHz
[1][3][5]
-
0.85 1.4
dB
f = 2140 MHz
[1][4][5]
-
0.95 1.5
dB
f = 1843 MHz
[1][2]
7.5 3.5 -
dBm
f = 1960 MHz
[1][3]
7.5 3.5 -
dBm
f = 2140 MHz
[1][4]
6.5 2.5 -
dBm
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
6 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Table 9.
Characteristics at VCC = 2.8 V …continued
1805 MHz f 2200 MHz, VCC = 2.8 V, VI(CTRL) 0.8 V and Tamb = 25 C. Input matched to 50 using a 3.9 nH inductor in
series. Unless otherwise specified.
Symbol Parameter
IP3i
input third-order intercept point
K
Rollett stability factor
ton
turn-on time
toff
turn-off time
Conditions
Min
Typ
Max Unit
f = 1843 MHz
[1][2]
2.5 +2.5 -
dBm
f = 1960 MHz
[1][3]
1.5 +3.5 -
dBm
f = 2140 MHz
[1][4]
1.0 +4.0 -
dBm
1
-
-
time from VI(CTRL) ON to 90 % of the gain
-
-
1.3
s
time from VI(CTRL) OFF to 10 % of the gain
-
-
0.3
s
-
-
1
A
Bypass mode
supply current
ICC
power gain
Gp
RLin
RLout
input return loss
output return loss
VI(CTRL) < 0.3 V
f = 1843 MHz
[1][2]
3.6 2.1 0.6 dB
f = 1960 MHz
[3]
4.0 2.2 0.7 dB
f = 2140 MHz
[1][4]
4.0 2.5 1.0 dB
f = 1843 MHz
[2]
-
12
-
dB
f = 1960 MHz
[3]
-
11
-
dB
f = 2140 MHz
[4]
-
10
-
dB
f = 1843 MHz
[2]
-
10
-
dB
f = 1960 MHz
[3]
-
10
-
dB
f = 2140 MHz
[4]
-
9
-
dB
[1]
Guaranteed by device design; not tested in production.
[2]
E-UTRA operating band 3 (1805 MHz to 1880 MHz).
[3]
E-UTRA operating band 2 (1930 MHz to 1990 MHz).
[4]
E-UTRA operating band 1 (2110 MHz to 2170 MHz).
[5]
PCB losses are subtracted.
BGS8M2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
7 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
13. Application information
13.1 LTE LNA
9HQ 9FF
5)LQ
&
/
,&
5)RXW
DDD
For a list of components, see Table 10.
Fig 3.
Schematics LTE LNA evaluation board
Table 10. List of components
For schematics, see Figure 3.
BGS8M2
Product data sheet
Component
Description
Value
Remarks
C1
decoupling capacitor
1 F
to suppress power supply noise
IC1
BGS8M2
-
NXP Semiconductors
L1
high-quality matching inductor
3.9 nH
Murata LQW15A
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Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
8 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
14. Package outline
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Package outline SOT1232 (XSON6)
BGS8M2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
9 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
15. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
16. Abbreviations
Table 11.
Abbreviations
Acronym
Description
ESD
ElectroStatic Discharge
HBM
Human Body Model
LTE
Long-Term Evolution
MMIC
Monolithic Microwave Integrated Circuit
PCB
Printed-Circuit Board
SiGe:C
Silicon Germanium Carbon
17. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BGS8M2 v.2
20160329
Product data sheet
-
BGS8M2 v.1
Modifications:
BGS8M2 v.1
BGS8M2
Product data sheet
•
added phase variation Table 8 on page 5 and Table 9 on page 6
20151222
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
-
-
© NXP Semiconductors N.V. 2016. All rights reserved.
10 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BGS8M2
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
11 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BGS8M2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
12 of 13
BGS8M2
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
20. Contents
1
2
3
4
5
6
7
8
8.1
8.2
9
10
11
12
13
13.1
14
15
16
17
18
18.1
18.2
18.3
18.4
19
20
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
LTE LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 March 2016
Document identifier: BGS8M2