Data Sheet

Document Number: AFT18S230--12N
Rev. 0, 7/2015
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
AFT18S230--12NR3
This 50 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 1805 to 1880 MHz.
1800 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1400 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
17.1
33.3
7.1
–33.6
–14
1840 MHz
17.5
33.3
7.1
–33.6
–16
1880 MHz
17.6
33.8
6.9
–33.7
–11
1805–1880 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
 High thermal conductivity packaging technology for reduced thermal
resistance
 Greater negative gate--source voltage range for improved Class C operation
 Designed for digital predistortion error correction systems
 Optimized for Doherty applications
OM--780--2L2L
PLASTIC
4 VBW (1)
RFin/VGS 1
3 RFout/VDS
2 VBW (1)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
1. Device cannot operate with the VDD current
supplied through pin 2 and pin 4.
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
TC
–40 to +150
C
TJ
–40 to +225
C
Symbol
Value (2,3)
Unit
RJC
0.27
C/W
Case Operating Temperature Range
Operating Junction Temperature
Range (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 50 W CW, 28 Vdc, IDQ = 1400 mA, 1842.5 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 291 Adc)
VGS(th)
1.0
2.0
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.3
2.8
3.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.9 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
Gps
16.3
17.6
19.3
dB
D
29.0
33.8
—
%
PAR
6.0
6.9
—
dB
ACPR
—
–33.7
–30.0
dBc
IRL
—
–11
–6
dB
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Part internally matched both on input and output.
(continued)
AFT18S230--12NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 309 W CW Output Power
(3 dB Input Overdrive from 204 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
204
—
W

—
–17
—

VBWres
—
70
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.009
—
dB/C
P1dB
—
0.006
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 6. Ordering Information
Device
AFT18S230--12NR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
Package
OM--780--2L2L
AFT18S230--12NR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDD
VGG
C15
AFT18S230--12N
Rev. C3
C5
R1
C3
C7
C17
C11
C9
C6
C12
C13
C2
R2
D51480
VGG
CUT OUT AREA
C1
C10
C14
C18
C4
C8
C16
VDD
Figure 2. AFT18S230--12NR3 Test Circuit Component Layout
Table 7. AFT18S230--12NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C9
12 pF Chip Capacitors
ATC100B120FW1500XT
ATC
C5, C6, C7, C8, C17, C18
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C10
6.8 pF Chip Capacitor
ATC100B6R8BW1500XT
ATC
C11
1.1 pF Chip Capacitor
ATC100B1R1BW1500XT
ATC
C12
1.0 pF Chip Capacitor
ATC100B1R0BW1500XT
ATC
C13
0.4 pF Chip Capacitor
ATC100B0R4BW1500XT
ATC
C14
0.9 pF Chip Capacitor
ATC100B0R9BW1500XT
ATC
C15, C16
470 F, 50 V Electrolytic Capacitors
477CKS050M
Illinois Capacitor
R1, R2
4.02 , 1/4 W Chip Resistors
CRCW12064R02FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D51480
MTL
AFT18S230--12NR3
4
RF Device Data
Freescale Semiconductor, Inc.
17.8
34
33
D
17.6
32
Gps
17.4
17.2
PARC
17
16.8
16.4
1760
1780
1800
–6
–33
–9
–33.5
–34
IRL
16.6
–32.5
–34.5
ACPR
1820 1840 1860
f, FREQUENCY (MHz)
1880
1900
–12
–15
–18
–21
–35
1920
–2.6
–2.8
–3
–3.2
–3.4
PARC (dB)
18
35
IRL, INPUT RETURN LOSS (dB)
18.2
Gps, POWER GAIN (dB)
36
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
ACPR (dBc)
18.4
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
–3.6
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
0
VDD = 28 Vdc, Pout = 83 W (PEP)
IDQ = 1400 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
–15
IM3--U
–30
IM5--U
–45
IM5--L
IM7--L
IM7--U
–60
–75
IM3--L
1
100
10
200
TWO--TONE SPACING (MHz)
18
0
17.8
17.6
17.4
17.2
17
VDD = 28 Vdc, IDQ = 1400 mA
f = 1840 MHz, Single--Carrier W--CDMA
Gps
–1
–2
–3
–4
–5
10
–1 dB = 27.5 W
60
–20
50
–25
40
–2 dB = 39.3 W
30
–3 dB = 53.4 W
D
20
ACPR
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
25
40
55
Pout, OUTPUT POWER (WATTS)
PARC
70
10
0
85
–30
–35
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
18.2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–40
–45
–50
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT18S230--12NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
18
50
–10
40
1805 MHz
16
1840 MHz
ACPR
1880 MHz
1805 MHz
1840 MHz
14
1880 MHz
12
10
0
D
20
1880 MHz
Gps
1840 MHz
1805 MHz
10
0
300
10
100
Pout, OUTPUT POWER (WATTS) AVG.
1
30
–20
–30
–40
ACPR (dBc)
Gps, POWER GAIN (dB)
20
60
D, DRAIN EFFICIENCY (%)
22
–50
–60
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
22
5
20
0
Gain
–5
16
--10
14
--15
IRL
12
10
1500
IRL (dB)
GAIN (dB)
18
1600
1700
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
1800 1900 2000
f, FREQUENCY (MHz)
2100
--20
2200
--25
2300
Figure 7. Broadband Frequency Response
AFT18S230--12NR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1805
1.17 – j4.25
1.10 + j3.92
1840
1.69 – j4.78
1.38 + j4.25
1880
3.16 – j5.35
2.16 + j4.57
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.10 – j3.55
16.8
54.0
250
53.4
–12
1.06 – j3.65
16.7
54.0
253
53.5
–13
1.09 – j3.92
16.5
54.0
250
52.4
–13
Zload
()
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.17 – j4.25
1.07 + j4.03
1.10 – j3.61
14.7
54.7
298
55.8
–18
1840
1.69 – j4.78
1.39 + j4.39
1.13 – j3.80
14.6
54.8
299
56.1
–18
1880
3.16 – j5.35
2.25 + j4.78
1.16 – j4.07
14.3
54.7
296
54.3
–18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQA = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
1.17 – j4.25
1.12 + j4.11
1.95 – j2.42
19.5
52.3
171
64.8
–19
1840
1.69 – j4.78
1.48 + j4.43
1.88 – j2.54
19.3
52.2
168
64.6
–20
1880
3.16 – j5.35
2.41 + j4.75
1.77 – j2.67
19.1
52.2
164
64.1
–20
Max Drain Efficiency
P3dB
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.80 – j2.54
17.3
53.2
211
67.0
–26
1.42 + j4.52
1.69 – j2.54
17.3
52.9
197
66.5
–28
2.40 + j4.89
1.73 – j2.72
17.1
52.9
193
65.4
–26
f
(MHz)
Zsource
()
Zin
()
1805
1.17 – j4.25
1.08 + j4.14
1840
1.69 – j4.78
1880
3.16 – j5.35
Zload
()
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT18S230--12NR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1.5
50 50.5
51
–2
51.5
–2.5
E
52
–3
IMAGINARY ()
IMAGINARY ()
–2
–1.5
50
52.5
–3.5
P
–4
53
53.5
54
–2.5
64
62
–3
60
–3.5
58
P
–4
–4.5
1
1.5
2
REAL ()
3
2.5
–5
0.5
3.5
Figure 8. P1dB Load Pull Output Power Contours (dBm)
–1.5
48
1
1.5
52
50
2
REAL ()
3
2.5
3.5
Figure 9. P1dB Load Pull Efficiency Contours (%)
–1.5
20.5
20
–2
IMAGINARY ()
E
19
–3
18.5
P
18
–4
–24
–2
19.5
–2.5
–3.5
56
54
–4.5
–5
0.5
IMAGINARY ()
E
–22
–26
–2.5
–20
E
–18
–3
–16
–3.5
P
–14
–4
17.5
–4.5
–5
0.5
1
1.5
2
–4.5
17
16.5
2.5
3.5
3
–12
–5
0.5
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18S230--12NR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1.5
51
51.5
–2
52
–2.5
E
52.5
IMAGINARY ()
IMAGINARY ()
–2
–1.5
51
–3
54
–3.5
54.5
–4
53
53.5
P
E
66
64
–3
P
58
56
–4.5
53.5
–5
0.5
1
1.5
2
REAL ()
3
2.5
–5
0.5
3.5
Figure 12. P3dB Load Pull Output Power Contours (dBm)
60
62
–3.5
–4
–4.5
50
1
1.5
54
52
2
REAL ()
3
2.5
3.5
Figure 13. P3dB Load Pull Efficiency Contours (%)
–1.5
–1.5
18
–2
17.5
–2.5
E
17
–3
16.5
–3.5
16
P
–4
14
–5
0.5
1
1.5
2
2.5
–2.5
3.5
3
–24
E
–22
–3
–20
–3.5
P
–18
–16
–4.5
15
14.5
–26
–28
–4
15.5
–4.5
–30
–32
–2
IMAGINARY ()
IMAGINARY ()
–2.5
–5
0.5
1
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT18S230--12NR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT18S230--12NR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18S230--12NR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT18S230--12NR3
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2015
Description
 Initial Release of Data Sheet
AFT18S230--12NR3
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2015 Freescale Semiconductor, Inc.
AFT18S230--12NR3
Document Number: AFT18S230--12N
Rev. 0, 7/2015
14
RF Device Data
Freescale Semiconductor, Inc.