Document Number: A2T21S160--12S Rev. 0, 8/2015 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. A2T21S160--12SR3 2100 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 600 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 18.2 33.6 6.8 –33.4 –18 2140 MHz 18.3 33.0 6.7 –33.3 –15 2170 MHz 18.4 32.9 6.7 –33.0 –13 2110–2170 MHz, 38 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications NI--780S--2L2L 4 VBW (1) RFin/VGS 1 3 RFout/VDS 2 VBW (1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with VDD current supplied through pin 2 and pin 4. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T21S160--12SR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C Symbol Value (2,3) Unit RJC 0.30 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 73C, 38 W CW, 28 Vdc, IDQ = 600 mA, 2140 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 151 Adc) VGS(th) 1.4 1.8 2.2 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test) VGS(Q) 2.2 2.6 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 38 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 17.7 18.4 20.7 dB Drain Efficiency D 31.1 32.9 — % PAR 6.3 6.7 — dB ACPR — –33.0 –30.9 dBc IRL — –13 –7 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Part internally matched both on input and output. (continued) A2T21S160--12SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 600 mA, f = 2140 MHz VSWR 10:1 at 32 Vdc, 190 W CW Output Power (3 dB Input Overdrive from 140 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 2110–2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 140 — W — –16.4 — VBWres — 90 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 38 W Avg. GF — 0.3 — dB Gain Variation over Temperature (–30C to +85C) G — 0.011 — dB/C P1dB — 0.009 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 2110–2170 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) Table 5. Ordering Information Device A2T21S160--12SR3 Tape and Reel Information R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel Package NI--780S--2L2L A2T21S160--12SR3 RF Device Data Freescale Semiconductor, Inc. 3 VDD C5 VGG C9 C4 C1 C10 C15 R1 C7 C17 C16 C8 R2 C2 CUT OUT AREA C14 C13 C18 C3 C11 C12 VGG C6 VDD A2T21S160--12S Rev. 1 D65896 Figure 2. A2T21S160--12SR3 Test Circuit Component Layout Table 6. A2T21S160--12SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6 10 F Chip Capacitors C5750X7S2A106M230KB TDK C7, C8, C10, C11, C14, C17 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C9 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C12 0.9 pF Chip Capacitor ATC100B0R9BT500XT ATC C13, C18 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC C15 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp C16 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC R1, R2 3 , 1/4 W Chip Resistors RC1206FR-073RL Yageo PCB Rogers RO4350B, 0.020, r = 3.66 D65896 MTL A2T21S160--12SR3 4 RF Device Data Freescale Semiconductor, Inc. 18.5 18.4 33.5 D Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 33 Gps –29 –9 18.2 –30 –12 18.1 –31 18.3 PARC IRL 18 ACPR (dBc) Gps, POWER GAIN (dB) 18.6 –32 –33 17.9 17.8 2060 ACPR 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 –15 –18 –21 –24 –34 2220 –3 –3.1 –3.2 –3.3 –3.4 PARC (dB) 18.7 IRL, INPUT RETURN LOSS (dBc) 35 VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 600 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 34.5 34 18.8 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS –3.5 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 38 Watts Avg. 0 VDD = 28 Vdc, Pout = 10 W (PEP) IDQ = 600 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz –15 IM3--U –30 IM3--L IM5--L –45 IM5--U IM7--L –60 –75 IM7--U 1 100 10 200 TWO--TONE SPACING (MHz) 18.4 0 18.2 18 17.8 17.6 17.4 VDD = 28 Vdc, IDQ = 600 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Gps –5 10 40 –30 D –1 dB = 21 W 30 ACPR –2 dB = 28 W –3 –4 –28 35 –1 –2 45 25 –3 dB = 37 W PARC Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 20 30 40 Pout, OUTPUT POWER (WATTS) 50 –32 –34 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 18.6 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –36 20 –38 15 60 –40 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T21S160--12SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 22 VDD = 28 Vdc, IDQ = 600 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 50 –20 ACPR 40 2170 MHz 2110 MHz 2140 MHz 2170 MHz 2140 MHz 14 2110 MHz 16 12 30 2170 MHz 2140 MHz 2110 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 1 Gps 100 20 10 0 200 –25 –30 –35 ACPR (dBc) 18 10 –15 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 20 60 D –40 –45 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 5 24 0 21 Gain –5 --10 15 12 --15 IRL 9 6 1550 IRL (dB) GAIN (dB) 18 1700 1850 VDD = 28 Vdc Pin = 0 dBm IDQ = 600 mA 2000 2150 2300 f, FREQUENCY (MHz) 2450 2600 --20 --25 2750 Figure 7. Broadband Frequency Response A2T21S160--12SR3 6 RF Device Data Freescale Semiconductor, Inc. Table 7. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ = 793 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.40 – j5.03 2.40 + j4.74 1.71 – j4.45 18.6 52.5 178 54.8 –14 2140 2.86 – j5.52 2.96 + j5.22 1.70 – j4.29 18.8 52.6 181 55.4 –15 2170 4.27 – j6.11 4.03 + j5.56 1.71 – j4.44 18.8 52.6 182 54.8 –15 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.40 – j5.03 2.33 + j5.03 1.72 – j4.68 16.3 53.3 214 56.3 –18 2140 2.86 – j5.52 2.96 + j5.56 1.71 – j4.64 16.4 53.3 216 56.1 –19 2170 4.27 – j6.11 4.13 + j6.04 1.72 – j4.67 16.5 53.3 215 55.9 –19 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQ = 793 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.40 – j5.03 2.71 + j5.02 3.37 – j2.33 21.8 50.1 102 66.7 –21 2140 2.86 – j5.52 3.42 + j5.53 2.99 – j2.05 22.1 49.9 98 66.6 –22 2170 4.27 – j6.11 4.77 + j5.85 2.70 – j2.14 22.1 50.0 100 66.0 –23 Max Drain Efficiency P3dB (2) Gain (dB) (dBm) (W) D (%) AM/PM () 3.37 – j2.33 19.8 50.8 120 68.0 –28 3.40 + j5.87 2.78 – j2.07 20.1 50.6 115 67.9 –31 4.90 + j6.17 2.70 – j2.14 20.1 50.7 116 67.4 –31 f (MHz) Zsource () Zin () 2110 2.40 – j5.03 2.65 + j5.25 2140 2.86 – j5.52 2170 4.27 – j6.11 Zload () (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T21S160--12SR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz 1 1 0 0 50 56 54 58 60 –1 –2 48.5 49 E 49.5 –3 P 52.5 1 2 1.5 51.5 52 2.5 3.5 3 REAL () 4.5 5 66 50 P 56 1.5 1 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 9. P1dB Load Pull Efficiency Contours (%) 1 1 23 0 22.5 –28 –1 22 –2 E 21.5 –3 21 20.5 –4 P 1 1.5 19.5 19 2 2.5 4 4.5 5 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: –20 –24 –30 –18 –2 E –3 –16 –4 20 3 3.5 REAL () –1 –16 –22 –26 0 IMAGINARY () IMAGINARY () E –3 –5 Figure 8. P1dB Load Pull Output Power Contours (dBm) –5 64 –2 –4 51 4 62 –1 50 50.5 –4 –5 IMAGINARY () IMAGINARY () 52 –5 P –14 –14 1 1.5 2 2.5 3 REAL () 3.5 4 4.5 5 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T21S160--12SR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz 1 1 0 0 –1 –1 52 58 56 60 –2 IMAGINARY () IMAGINARY () 54 49.5 50 E 50.5 –3 –5 51 52.5 –4 53 P 1 2 1.5 2.5 4 3.5 3 REAL () E 62 52 4.5 5 1.5 1 60 P 2 2.5 4 3 3.5 REAL () 58 4.5 5 Figure 13. P3dB Load Pull Efficiency Contours (%) 1 1 21 0 20.5 –1 20 –2 E 19.5 –3 19 P 1 1.5 17.5 17 2 2.5 4 –30 –26 –28 –2 –24 E –22 –3 –4 18 3 3.5 REAL () –32 –1 –20 18.5 –4 –34 0 IMAGINARY () IMAGINARY () 64 66 –3 –5 Figure 12. P3dB Load Pull Output Power Contours (dBm) –5 –2 –4 51.5 52 62 4.5 5 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: –5 –18 P 1 1.5 2 2.5 3 REAL () 3.5 4 4.5 5 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T21S160--12SR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS A2T21S160--12SR3 10 RF Device Data Freescale Semiconductor, Inc. A2T21S160--12SR3 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2015 Description Initial Release of Data Sheet A2T21S160--12SR3 12 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. A2T21S160--12SR3 Document Number:Data A2T21S160--12S RF Device Rev. Freescale 0, 8/2015 Semiconductor, Inc. 13