Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2T18S260W12N
Rev. 0, 2/2016
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A2T18S260W12NR3
This 56 W RF power LDMOS transistor is designed for cellular base station
applications requiring very wide instantaneous bandwidth capability covering
the frequency range of 1805 to 1880 MHz.
1800 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
18.1
33.1
6.9
–34.7
–15
1840 MHz
18.5
33.5
7.0
–35.1
–23
1880 MHz
18.7
34.4
6.8
–34.4
–12
1805–1880 MHz, 56 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
OM--880X--2L2L
PLASTIC
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
 Optimized for Doherty Applications
4 VBW (1)
RFin/VGS 1
3 RFout/VDS
2 VBW (1)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
1. Device can operate with VDD current
supplied through pin 2 and pin 4 as long
as the device’s average output power is
less than 90 watts.
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2T18S260W12NR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +125
C
(1,2)
TJ
–40 to +225
C
Characteristic
Symbol
Value (2,3)
Unit
RJC
0.23
C/W
Operating Junction Temperature Range
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 81C, 56 W CW, 28 Vdc, IDQ = 1500 mA, 1840 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
1.4
1.8
2.2
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGS(Q)
2.1
2.6
2.9
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.05
0.17
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
A2T18S260W12NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 56 W Avg., f = 1880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
17.0
18.7
19.5
dB
Drain Efficiency
D
31.5
34.4
—
%
PAR
6.5
6.8
—
dB
ACPR
—
–34.4
–31.5
dBc
IRL
—
–12
–8
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1500 mA, f = 1840 MHz, 12 sec(on), 10% Duty Cycle
VSWR 10:1 at 32 Vdc, 295 W Pulsed CW Output Power
(3 dB Input Overdrive from 251 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 1805–1880 MHz Bandwidth
Pout @ 1 dB Compression Point, Pulsed CW
P1dB
—
280
—
W

—
–13
—

VBWres
—
90
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 56 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.011
—
dB/C
P1dB
—
0.005
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 6. Ordering Information
Device
A2T18S260W12NR3
Tape and Reel Information
R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel
Package
OM--880X--2L2L
1. Part internally matched both on input and output.
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
3
VGG
VDD
C19
C1
C9
C12
C3 C4
C14
C16
R1
C10
C5 C6
C18
R2
CUT OUT AREA
C15
C11
C2
C13
C17
C7
C8
VGG
A2T18S260W12N
Rev. 2
D74096
Figure 2. A2T18S260W12NR3 Test Circuit Component Layout
Table 7. A2T18S260W12NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C7, C8
4.7 F Chip Capacitors
C4532X7S2A475M230KB
TDK
C9, C10, C11, C12, C13
15 pF Chip Capacitors
GQM2195C2E150FB12D
Murata
C14, C16, C17
0.9 pF Chip Capacitors
GQM2195C2ER90BB12D
Murata
C15
1 pF Chip Capacitor
GQM2195C2E1R0BB12D
Murata
C18
0.8 pF Chip Capacitor
GQM2195C2ER80BB12D
Murata
C19
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26-RH
Multicomp
R1, R2
2.2 , 1/4 W Chip Resistors
WCR0805-2R2FI
Welwyn
PCB
Rogers RO4350B, 0.020, r = 3.66
D74096
MTL
A2T18S260W12NR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–1880 MHz
18.2
35
34
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
18
17.8
PARC
17.6
1780
1800
1820 1840 1860
f, FREQUENCY (MHz)
–2.8
–5
–32
–3
–10
–34
ACPR
17.2
17
1760
–31
–33
IRL
17.4
33
1880
–35
–36
1920
1900
–3.2
–3.4
–3.6
–3.8
–15
–20
–25
–30
IRL, INPUT RETURN LOSS (dB)
18.4
36
PARC (dB)
18.6
D, DRAIN
EFFICIENCY (%)
18.8
Gps, POWER GAIN (dB)
37
VDD = 28 Vdc, Pout = 56 W (Avg.), IDQ = 1500 mA
Single--Carrier W--CDMA
Gps
3.84 MHz Channel Bandwidth
D
ACPR (dBc)
19
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 56 Watts Avg.
–10
VDD = 28 Vdc, Pout = 95 W (PEP), IDQ = 1500 mA
Two--Tone Measurements
–20 (f1 + f2)/2 = Center Frequency of 1840 MHz
IM3--U
–30
IM3--L
IM5--U
–40
IM5--L
IM7--U
–50
IM7--L
–60
1
200
100
10
TWO--TONE SPACING (MHz)
19
–1
18.6
18.2
17.8
17.4
17
–1 dB = 29.38 W
VDD = 28 Vdc, IDQ = 1500 mA
f = 1840 MHz
–2 dB = 42.22 W
–2
ACPR 60
–30
50
D
–4
–6
20
–25
–3 dB = 56.39 W
–3
–5
70
Gps
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
40
60
80
Pout, OUTPUT POWER (WATTS)
PARC
100
40
30
–35
–40
ACPR (dBc)
0
D DRAIN EFFICIENCY (%)
19.4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–45
20
–50
10
120
–55
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–1880 MHz
Gps, POWER GAIN (dB)
20
Gps
1880 MHz
18
1805 MHz
16
50
–10
40
1840 MHz
1880 MHz
30
1840 MHz
1805 MHz
12
ACPR
1880 MHz
1840 MHz
10
Pout, OUTPUT POWER (WATTS) AVG.
20
10
1805 MHz
1
0
D
14 Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
10
60
100
0
200
–20
–30
–40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1500 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
D, DRAIN EFFICIENCY (%)
22
–50
–60
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
5
24
Gain
20
0
–5
IRL
–10
12
8
0
1200
–15
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1500 mA
4
1400
1600
1800 2000 2200
f, FREQUENCY (MHz)
IRL (dB)
GAIN (dB)
16
–20
2400
2600
–25
2800
Figure 7. Broadband Frequency Response
A2T18S260W12NR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 1466 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
1800
0.56 – j3.82
0.58 + j3.60
1840
0.64 – j4.06
0.68 + j3.74
1880
0.81 – j4.35
0.80 + j3.92
Zload
()
(1)
AM/PM
()
Gain (dB)
(dBm)
(W)
D
(%)
0.46 – j2.94
16.4
55.0
318
53.4
–11
0.45 – j3.06
16.3
55.0
318
53.2
–12
0.46 – j3.17
16.3
54.9
312
52.7
–11
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1800
0.56 – j3.82
0.51 + j3.65
0.45 – j3.02
14.2
55.7
374
54.6
–14
1840
0.64 – j4.06
0.60 + j3.81
0.45 – j3.11
14.2
55.7
372
55.0
–15
1880
0.81 – j4.35
0.72 + j4.01
0.47 – j3.24
14.1
55.6
363
53.5
–14
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Load Pull Performance — Maximum Efficiency Tuning
VDD = 28 Vdc, IDQ = 1466 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1800
0.56 – j3.82
0.59 + j3.68
1.27 – j2.42
19.9
52.6
182
68.9
–18
1840
0.64 – j4.06
0.69 + j3.83
1.15 – j2.41
19.9
52.4
175
67.8
–20
1880
0.81 – j4.35
0.80 + j4.08
0.99 – j2.41
20.0
52.2
166
66.2
–21
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.14 – j2.51
17.6
53.7
233
69.1
–23
0.62 + j3.88
1.15 – j2.39
17.9
53.0
200
67.2
–26
0.73 + j4.10
1.03 – j2.68
17.4
53.6
229
65.8
–23
f
(MHz)
Zsource
()
Zin
()
1800
0.56 – j3.82
0.52 + j3.69
1840
0.64 – j4.06
1880
0.81 – j4.35
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1.5
–1.5
62
51.5
E
–2.5
52.5
52
53
–3
–3.5
–2
51
IMAGINARY ()
IMAGINARY ()
–2
P
0
54.5
0.5
54
E
–2.5
66
64
–3
P
53.5
1
REAL ()
1.5
–3.5
2
Figure 8. P1dB Load Pull Output Power Contours (dBm)
52
0.5
0
54 56
60
58
62
1
REAL ()
1.5
2
Figure 9. P1dB Load Pull Efficiency Contours (%)
–1.5
–1.5
–2
–2
20.5
20
E
–2.5
IMAGINARY ()
IMAGINARY ()
–24 –22
19.5
19
–3
–3.5
P
17 17.5
16.5
0
0.5
–20
E
–2.5
–16
–3
18
–10
1.5
2
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
–3.5
–14
P
18.5
1
REAL ()
–18
0.5
0
–12
1
REAL ()
1.5
2
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18S260W12NR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz
–1.5
–1.5
51.5
52.5
E
–2.5
54.5
–3
–3.5
–2
52
P
0
55.5
0.5
53
53.5
55
IMAGINARY ()
IMAGINARY ()
–2
E
–2.5
66
64
–3
54
1
REAL ()
1.5
–3.5
2
Figure 12. P3dB Load Pull Output Power Contours (dBm)
62
P
52 54 56
0.5
0
60
58
1
REAL ()
1.5
2
Figure 13. P3dB Load Pull Efficiency Contours (%)
–1.5
–1.5
–30 –28
–26
–2
18.5
E
–2.5
IMAGINARY ()
IMAGINARY ()
–2
18
17.5
17
–3
P
0
E
–2.5
0.5
–18
–3
P
16
1
REAL ()
1.5
2
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
–22
–20
16.5
14.5 15 15.5
–3.5
–24
–3.5
–16
–14
0.5
0
1
REAL ()
1.5
2
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
A2T18S260W12NR3
10
RF Device Data
Freescale Semiconductor, Inc.
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
11
A2T18S260W12NR3
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Feb. 2016
Description
 Initial Release of Data Sheet
A2T18S260W12NR3
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2016 Freescale Semiconductor, Inc.
A2T18S260W12NR3
Document Number: A2T18S260W12N
Rev. 0, 2/2016
14
RF Device Data
Freescale Semiconductor, Inc.