Freescale Semiconductor Technical Data Document Number: A2T18H160--24S Rev. 0, 11/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. 1800 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) 1805 MHz 17.9 49.9 7.7 –32.0 1840 MHz 17.8 49.3 7.7 –33.8 1880 MHz 17.8 50.2 7.8 –34.7 A2T18H160--24SR3 1805–1880 MHz, 28 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR ACPR (dBc) NI--780S--4L2L Features Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T18H160--24SR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C (1,2) TJ –40 to +225 C Characteristic Symbol Value (2,3) Unit RJC 0.45 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 75C, 28 W Avg., W--CDMA, 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc, 1840 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 60 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 400 mAdc, Measured in Functional Test) VGSA(Q) 1.4 1.8 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.6 Adc) VDS(on) 0.1 0.15 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A, Carrier On Characteristics -- Side B, Peaking 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. (continued) A2T18H160--24SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc, Pout = 28 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 17.3 17.9 20.3 dB Drain Efficiency D 47.5 49.9 — % PAR 7.3 7.7 — dB ACPR — –32.0 –29.5 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 400 mA, VGSB = 0.65 Vdc, f = 1840 MHz No Device Degradation VSWR 10:1 at 32 Vdc, 158 W CW Output Power (3 dB Input Overdrive from 100 W CW Rated Power) Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc, 1805–1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 126 — W Pout @ 3 dB Compression Point (3) P3dB — 182 — W — –10.3 — VBWres — 135 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 28 W Avg. GF — 0.04 — dB Gain Variation over Temperature (–30C to +85C) G — 0.008 — dB/C P1dB — 0.003 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 1805–1880 MHz frequency range) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) Table 5. Ordering Information Device A2T18H160--24SR3 Tape and Reel Information R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel Package NI--780S--4L2L 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 3 VDDA VGGA -- C14 R2 C1 A2T18H160--24S Rev. 2 C15 C17 C16 C2 C5 C6 Z1 R1 C3 C4 C7 C10 C11 C12 C8 C9 R4 C13 C CUT OUT AREA R3 C18 C19 P C20 C21 D68661 C22 C24 C23 C25 VDDB -- R5 VGGB Figure 2. A2T18H160--24SR3 Test Circuit Component Layout Table 6. A2T18H160--24SR3 Test Circuit Component Designations and Values Part Description PCB Part Number Manufacturer D58628 MTL C1, C13, C16, C17, C22, C24 10 F Chip Capacitors C5750X7S2A106M230KB TDK C2, C4, C8, C12, C15, C19, C23 12 pF Chip Capacitors ATC600F120JT250XT ATC C3 1.8 pF Chip Capacitor ATC600F1R8BT250XT ATC C5, C6 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC C7 1.0 pF Chip Capacitor ATC600F1R0BT250XT ATC C9 2.0 pF Chip Capacitor ATC600F2R0BT250XT ATC C10, C11, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC C14, C25 220 F, 50 V Electrolytic Capacitors 227CKS050M Illinois Capacitor C18 9.1 pF Chip Capacitor ATC600F9R1BT250XT ATC C21 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC R1 50 , 4 W Chip Resistor C10A50Z4 Anaren R2, R5 20 K, 1/4 W Chip Resistors CRCW120620K0JNEA Vishay R3, R4 5.6 , 1/4 W Chip Resistors CRCW12065R60FKEA Vishay Z1 1700–2000 MHz Band, 90, 5 dB Directional Coupler X3C19P1-05S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D68661 MTL A2T18H160--24SR3 4 RF Device Data Freescale Semiconductor, Inc. Gps, POWER GAIN (dB) 18.1 18 17.9 17.8 Gps 17.7 PARC 17.6 1800 –28 –2.1 –32 ACPR 17.4 1780 –2 –30 17.5 17.3 1760 –26 1820 1840 1860 f, FREQUENCY (MHz) –34 1880 1900 ACPR (dBc) 18.2 –2.2 –2.3 –2.4 PARC (dB) 53 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQA = 400 mA, VGSB = 0.65 Vdc 52 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB 51 @ 0.01% Probability on CCDF 50 D 49 18.3 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS –2.5 –36 1920 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28 Watts Avg. 0 VDD = 28 Vdc, Pout = 34 W (PEP), IDQA = 400 mA VGSB = 0.65 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz –15 IM3--U –30 IM3--L IM5--L –45 IM5--U –60 –75 IM7--L 1 IM7--U 10 100 200 TWO--TONE SPACING (MHz) 18 0 17.8 17.6 17.4 17.2 17 VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.65 Vdc f = 1840 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth D –28 55 –30 ACPR 50 –1 –2 60 –1 dB = 16 W –3 –4 –5 10 45 Gps –2 dB = 26 W 40 –3 dB = 37 W Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 20 30 40 Pout, OUTPUT POWER (WATTS) PARC 50 –32 –34 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 18.2 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –36 35 –38 30 60 –40 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 1880 MHz 1805 MHz Gps Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1 55 –15 45 35 1840 MHz 1880 MHz 1805 MHz 12 10 ACPR 1805 MHz 1880 MHz 1840 MHz 14 –5 1840 MHz 18 16 65 10 Pout, OUTPUT POWER (WATTS) AVG. 100 25 15 5 200 –25 –35 –45 ACPR (dBc) 20 Gps, POWER GAIN (dB) D VDD = 28 Vdc, IDQA = 400 mA VGSB = 0.65 Vdc D, DRAIN EFFICIENCY (%) 22 –55 –65 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 21 Gain GAIN (dB) 18 15 VDD = 28 Vdc Pin = 0 dBm IDQA = 400 mA VGSB = 0.65 Vdc 12 9 6 1500 1600 1700 1800 1900 2000 f, FREQUENCY (MHz) 2100 2200 2300 Figure 7. Broadband Frequency Response A2T18H160--24SR3 6 RF Device Data Freescale Semiconductor, Inc. Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 408 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 2.25 – j8.58 2.61 + j7.74 1840 2.88 – j9.59 2.95 + j8.30 1880 4.30 – j10.4 3.95 + j8.89 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 4.68 – j7.50 20.1 48.7 73 61.5 –15 4.73 – j8.14 20.0 48.7 75 61.6 –15 4.76 – j8.44 20.0 48.6 72 60.2 –15 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 2.25 – j8.58 2.53 + j8.36 4.68 – j8.41 18.0 49.4 87 62.3 –22 1840 2.88 – j9.59 2.91 + j9.02 4.71 – j8.78 17.9 49.4 87 62.6 –23 1880 4.30 – j10.4 4.06 + j9.90 4.89 – j9.14 18.0 49.3 85 61.3 –22 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 408 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 2.25 – j8.58 2.13 + j7.81 7.94 – j3.73 22.2 47.2 52 71.5 –27 1840 2.88 – j9.59 2.33 + j8.41 7.67 – j3.36 22.1 47.0 50 71.9 –29 1880 4.30 – j10.4 3.13 + j9.13 7.25 – j3.56 22.3 46.9 49 71.0 –29 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 7.63 – j6.11 19.8 48.4 70 72.0 –31 2.41 + j8.94 7.53 – j5.64 19.7 48.3 67 72.3 –32 3.27 + j9.86 6.95 – j5.06 19.8 48.0 63 71.1 –34 f (MHz) Zsource () Zin () 1805 2.25 – j8.58 2.17 + j8.29 1840 2.88 – j9.59 1880 4.30 – j10.4 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 7 Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.65 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 2.70 – j9.87 2.49 + j9.58 1840 3.29 – j10.6 2.89 + j10.3 1880 5.01 – j11.4 4.06 + j11.3 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 3.97 – j9.45 15.5 50.5 112 56.5 –30 3.81 – j9.81 15.4 50.5 113 55.7 –31 4.09 – j10.1 15.5 50.5 111 56.0 –31 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 2.70 – j9.87 2.51 + j10.1 3.84 – j9.87 13.3 51.2 132 56.6 –38 1840 3.29 – j10.6 2.95 + j10.8 3.92 – j10.2 13.3 51.2 133 57.0 –39 1880 5.01 – j11.4 4.34 + j12.1 4.17 – j10.5 13.4 51.1 129 56.7 –39 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.65 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 2.70 – j9.87 2.08 + j9.49 8.64 – j6.58 16.8 48.9 78 69.4 –35 1840 3.29 – j10.6 2.35 + j10.1 8.17 – j6.08 16.8 48.9 77 69.8 –36 1880 5.01 – j11.4 3.22 + j11.2 7.22 – j5.33 16.8 48.7 73 69.7 –36 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 8.72 – j7.75 14.6 49.7 92 67.9 –43 2.54 + j10.8 8.30 – j7.39 14.7 49.7 94 68.6 –44 3.64 + j12.1 7.94 – j6.26 14.8 49.4 87 68.3 –45 f (MHz) Zsource () Zin () 1805 2.70 – j9.87 2.17 + j10.0 1840 3.29 – j10.6 1880 5.01 – j11.4 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T18H160--24SR3 8 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL CARRIER LOAD PULL CONTOURS — 1840 MHz 0 0 46 E –4 –6 48.5 –8 48 –2 46.5 IMAGINARY () IMAGINARY () 50 45.5 45 44.5 –2 47 47.5 P E –4 –6 70 –8 P 48 –10 –12 2 64 –10 47.5 47 4 6 8 REAL () 12 10 –12 14 66 68 56 2 4 58 6 60 62 8 REAL () 12 10 14 Figure 9. P1dB Load Pull Efficiency Contours (%) Figure 8. P1dB Load Pull Output Power Contours (dBm) 0 0 23.5 –2 E –4 IMAGINARY () IMAGINARY () –2 –6 21.5 –8 22 P 20.5 –10 –12 23 22.5 19.5 2 4 6 –4 –26 –24 –6 –22 –8 –20 P 21 –18 –10 20 8 REAL () 10 12 14 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: –30 –28 E –12 –16 –14 2 4 6 8 REAL () 10 12 14 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 9 P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 1840 MHz 0 0 46 45.5 64 46.5 –2 –2 47 IMAGINARY () IMAGINARY () –4 E –6 48 47.5 –8 P 49 –4 –12 8 REAL () 12 10 14 Figure 12. P3dB Load Pull Output Power Contours (dBm) 4 2 6 8 REAL () 60 12 10 14 20.5 19.5 17.5 18.5 18 19 20 –2 21 IMAGINARY () –4 E –6 –8 –36 –34 –4 –32 E –6 –30 –8 P P –10 –10 –12 62 60 0 17 IMAGINARY () 56 58 Figure 13. P3dB Load Pull Efficiency Contours (%) 0 –2 64 P 48.5 –12 6 66 70 –10 4 68 72 –8 –10 2 E –6 2 4 6 8 REAL () 10 12 14 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: –12 –20 2 –24 –22 4 –28 –26 6 8 REAL () 10 12 14 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H160--24SR3 10 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz 0 0 46.5 –2 –2 47.5 –4 48 –6 E 48.5 –8 49 50 P –10 0 2 4 10 12 14 –2 –2 –4 –4 E IMAGINARY () IMAGINARY () 0 16.5 –8 P –14 16 0 2 60 4 6 8 REAL () 10 12 14 Figure 18. P1dB Load Pull Gain Contours (dB) NOTE: 58 56 0 2 4 6 8 REAL () –44 10 54 12 14 –42 –40 –38 –36 –6 E –34 –8 –14 –32 P –12 15.5 15 62 P –10 14.5 13 14 13.5 68 Figure 17. P1dB Load Pull Efficiency Contours (%) 0 –12 E –8 –14 Figure 16. P1dB Load Pull Output Power Contours (dBm) –10 66 –6 –12 6 8 REAL () –6 64 –4 –10 49.5 –12 –14 IMAGINARY () IMAGINARY () 62 47 –30 0 2 4 6 8 REAL () 10 12 14 Figure 19. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 11 P3dB – TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz 0 0 47 47.5 –2 48 –4 IMAGINARY () IMAGINARY () –2 48.5 –6 –10 P –12 –14 49 E –8 2 51 4 50 10 6 8 REAL () 12 14 –14 –2 –4 –4 –6 14.5 E –8 IMAGINARY () IMAGINARY () –2 –14 12 0 2 60 58 0 2 14 12.5 4 6 8 REAL () 6 8 REAL () 10 10 12 14 Figure 22. P3dB Load Pull Gain Contours (dB) NOTE: 54 12 14 –48 –46 –6 –44 E –8 –14 –42 –40 P –38 –12 13.5 13 4 56 54 –50 –10 P 11.5 62 Figure 21. P3dB Load Pull Efficiency Contours (%) 0 11 68 P 52 49.5 0 –12 E –8 –12 Figure 20. P3dB Load Pull Output Power Contours (dBm) –10 64 –6 –10 50.5 0 66 –4 –36 0 2 4 6 8 REAL () 10 12 14 Figure 23. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T18H160--24SR3 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 13 A2T18H160--24SR3 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2015 Description Initial Release of Data Sheet A2T18H160--24SR3 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. Document Number: A2T18H160--24S A2T18H160-24SR3 Rev. 0, 11/2015 16 RF Device Data Freescale Semiconductor, Inc.