Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFE8VP8600H
Rev. 0, 7/2015
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This high power transistor is designed for use in UHF TV broadcast
applications. The device has an integrated input matching network for better
power distribution and is ideal for use in both analog and digital TV
transmitters.
DBV--T Broadband Class AB Performance: VDD = 50 Vdc, IDQ = 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Output
PAR
(dB)
DVB--T (8k OFDM)
140 Avg.
474
20.2
29.7
8.9
610
20.7
34.5
8.2
810
20.0
34.0
8.4
MRFE8VP8600H
470–860 MHz, 140 W AVG., 50 V
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
860
Signal Type
VSWR
DVB--T
(8k OFDM)
20:1 at all
Phase Angles
Pout
(W)
Test
Voltage
125
(3 dB
Overdrive)
50
Result
No Device
Degradation
NI--1230H–4S
Features





Excellent Thermal Characteristics
High Gain for Reduced PA Size
High Efficiency for Class AB and Doherty Operations
Integrated Input Matching. Unmatched Output.
Extended Negative Gate--Source Voltage Range of –6.0 Vdc to +10 Vdc
Gate A
3
1 Drain A
Gate B
4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +115
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1)
TJ
–40 to +225
C
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
1250
6.25
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.16
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 99C, 125 W DVB--T (8k OFDM), 50 Vdc, IDQ = 1400 mA, 860 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 250 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
115
118
—
Vdc
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 115 Vdc, VGS = 0 Vdc)
IDSS
—
—
20
Adc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 925 Adc)
VGS(th)
1.3
2.1
2.3
Vdc
Gate Quiescent Voltage (5)
(VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.4
2.8
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.8 Adc)
VDS(on)
0.1
0.3
0.5
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 17 Adc)
gfs
—
19.4
—
S
Reverse Transfer Capacitance (6)
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.62
—
pF
Output Capacitance (6)
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
71.2
—
pF
Input Capacitance (7)
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
452
—
pF
On Characteristics
Dynamic Characteristics (4)
1.
2.
3.
4.
5.
6.
7.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
Each side of device measured separately.
Measurement made with device in push--pull configuration.
Part internally input matched.
Die capacitance value without internal matching.
(continued)
MRFE8VP8600H
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ 4 MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Gps
20.6
21.0
23.6
dB
D
28.0
30.0
—
%
ACPR
—
–61.0
–59.4
dBc
IRL
—
–12
–9
dB
Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz,
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
Pout = 125 W Avg.
Load Mismatch
VSWR 20:1 at all Phase Angles, 3 dB Overdrive from
Rated Pout (125 W Avg.)
PAR

—
7.8
—
dB
No Degradation in Output Power
Table 5. Ordering Information
Device
MRFE8VP8600R5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230H--4S
1. Measurement made with device in push--pull configuration.
MRFE8VP8600H
RF Device Data
Freescale Semiconductor, Inc.
3
C1 C2
C18
C17
R1
C16
C13*
COAX1
COAX3
C15
C24*
C3*
C5*
C8
C9
C19* C21*
L1
CUT OUT AREA
C7
C4*
C10*
C6*
COAX2
C14*
C22*
C26*
C28*
C27*
C29
COAX4
C30
MRFE8VP8600H
Rev. 0
C11 C12
C20*
C25*
C23*
C31
R2
C32
D63637
*C3, C4, C5, C6, C10, C13, C14, C19, C20, C21, C22, C23, C24, C25, C26, C27, and C28 are mounted vertically.
Figure 2. MRFE8VP8600H Test Circuit Component Layout — 860 MHz, DVB--T (8k OFDM)
Table 6. MRFE8VP8600H Test Circuit Component Designations and Values — 860 MHz, DVB--T (8k OFDM)
Part
Description
Part Number
Manufacturer
C1, C11
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C2, C12
2.2 F Chip Capacitors
C3225X7R1H225K250AB
TDK
C3, C4, C5, C6
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C7, C8
24 pF Chip Capacitors
ATC100B240JT500XT
ATC
C9
0.8–8.0 pF Variable Capacitor
27291SL
Johanson Components
C10
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C13, C14
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C15, C29
2.2 F Chip Capacitors
C3225X7R2A225K230AB
TDK
C16, C25, C26, C28, C30
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C17, C31
4.7 F Chip Capacitors
C575X7R2A475K230KA
TDK
C18, C32
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C19
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C20
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C21
3.0 pF Chip Capacitor
ATC100B3R0BT500XT
ATC
C22
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C23
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C24, C27
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
Coax1, 2
25  Semi Rigid Coax, 2.0 Shield Length
UT--141C--25
Micro--Coax
Coax3, 4
25  Semi Rigid Coax, 2.2 Shield Length
UT--141C--25
Micro--Coax
L1
2.5 nH, 1 Turn Inductor
A01TKLC
Coilcraft
R1, R2
10 , 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
PCB
Rogers RO4350B, 0.030, r = 3.66
D63637
MTL
MRFE8VP8600H
4
RF Device Data
Freescale Semiconductor, Inc.
RF
INPUT
Z1
Z2
RF Device Data
Freescale Semiconductor, Inc.
Z7
Z6
C8
C7
VBIAS
Z9
L1
Z8
C12
C2
R2
Z13
C10
Z12
Z21
Z19
Z15
Z14
Z18
C14
Z17
Z16
C13
DUT
Z49
Z47
Z23
Z22
Z46
Z48
C29
Z25
Z24
C15
Z28
Z51
Z29
C19
C30
Z27
Z26
C16
Z50
0.065  0.400 Microstrip
0.208  0.850 Microstrip
0.242  0.960 Microstrip
Z12, Z13
Z14, Z15
Z16, Z17
*Line length includes microstrip bends
0.341  0.400 Microstrip
0.083  0.400 Microstrip
Z6, Z7
Z10, Z11
0.019  0.100 Microstrip
Z5
Z8, Z9
0.220  0.060 Microstrip
0.410  0.062 Microstrip
Z3, Z4
0.245  0.080 Microstrip
Z2
Description
0.204  0.062 Microstrip
Z1
Microstrip
C31
Z31
C20
Z30
C17
C22
Z35
C21
Z33
C32
VSUPPLY
Z34
Z32
C18
VSUPPLY
Z37 Z39
C23
Z36 Z38
Z36, Z37
Z34, Z35
Z32, Z33
Z30, Z31
Z28, Z29
Z26, Z27
Z24, Z25
Z22, Z23
Z20*, Z21*
Z18, Z19
Microstrip
0.074  0.420 Microstrip
0.072  0.420 Microstrip
0.275  0.420 Microstrip
0.072  0.420 Microstrip
0.072  0.420 Microstrip
0.015  0.420 Microstrip
0.186  0.520 Microstrip
0.164  0.520 Microstrip
1.026  0.080 Microstrip
0.115  0.080 Microstrip
Description
Z50, Z51
Z48*, Z49*
Z46, Z47
Z45
Z44
Z43
Z42
Z41
Z40
Z38, Z39
Microstrip
COAX4
C27
Z42
C26
Z41
C25
Z40
C24
COAX3
0.371  0.080 Microstrip
0.297  0.080 Microstrip
0.358  0.080 Microstrip
0.204  0.062 Microstrip
0.018  0.080 Microstrip
0.070  0.080 Microstrip
0.280  0.060 Microstrip
0.155  0.060 Microstrip
0.389  0.060 Microstrip
0.211  0.100 Microstrip
Description
Figure 3. MRFE8VP8600H Test Circuit Schematic — 860 MHz DVB--T (8k OFDM)
C11
Z11
C9
Z10
C1
Z20
+
Table 7. MRFE8VP8600H Test Circuit Schematic — 860 MHz DVB--T (8k OFDM)
COAX2
C6
Z5
C5
C4
C3
Z3
Z4
COAX1
VBIAS
R1
+
MRFE8VP8600H
5
C28
Z43
RF
Z44 Z45 OUTPUT
7
6
VDD = 50 Vdc
40 Vdc
30 Vdc
20 Vdc
5
4
3
2
1
25
50
75
0
2.1
100
2.2
2.3
2.5
2.4
2.6
2.7
2.8
TC, CASE TEMPERATURE (C)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 4. Normalized VGS versus Quiescent
Current and Case Temperature
Figure 5. Drain Current versus Gate--Source Voltage
1000
66
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Coss
100
P3dB = 59.6 dBm (917 W)
64
10
P2dB = 59.4 dBm (865 W)
62
P1dB = 59.0 dBm (799 W)
60
Actual
58
56
54
VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz
Pulse Width = 100 sec, Duty Cycle = 10%
52
Crss
1
Ideal
50
0
10
20
30
40
30
50
31
32
33
34
35
36
37
38
39
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (dBm)
Note: Each side of device measured separately.
Figure 7. Pulse CW Output Power versus
Input Power
Figure 6. Capacitance versus Drain--Source Voltage
24
VDD = 50 Vdc, IDQ = 1400 mA
f = 860 MHz
Pulse Width = 100 sec
Duty Cycle = 10%
Gps, POWER GAIN (dB)
23
41
70
60
Gps
50
22
D
21
40
20
30
D, DRAIN EFFICIENCY (%)
C, CAPACITANCE (pF)
8
VDD = 50 Vdc
IDD, DRAIN CURRENT (AMPS)
1.08
1.07
IDS(Q) = 100 mA
1.06
1.05 1400 mA
1.04
1.03
1.02 1900 mA
1.01
1
2400 mA
0.99
0.98
0.97
0.96
0.95
0.94
0.93
--50
--25
0
Pout, OUTPUT POWER (dBm)
NORMALIZED VGS(Q)
TYPICAL CHARACTERISTICS — 860 MHz
20
1000
19
100
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulse Power Gain and Drain Efficiency
versus Output Power
MRFE8VP8600H
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
10
PROBABILITY (%)
1
0.1
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
0.01
0.001
0.0001
2
0
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 9. Source Peak--to--Average DVB--T (8k OFDM)
--20
7.61 MHz
--30
--40
--50
4 kHz BW
4 kHz BW
(dB)
--60
ACPR Measured at 4 MHz Offset
from Center Frequency
--70
--80
--90
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
--100
--110
--5
--4
--3
--2
--1
0
1
2
3
4
5
f, FREQUENCY (MHz)
Figure 10. DVB--T (8k OFDM) Spectrum
MRFE8VP8600H
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS
109
VDD = 50 Vdc
MTTF (HOURS)
108
ID = 6.56 Amps
107
8.18 Amps
9.88 Amps
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf/calculators.
Figure 11. MTTF versus Junction Temperature -- CW
f
MHz
Zsource

Zload

860
0.85 – j0.90
4.0 + j1.1
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
50 
+
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRFE8VP8600H
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRFE8VP8600H
RF Device Data
Freescale Semiconductor, Inc.
9
MRFE8VP8600H
10
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2015
Description
 Initial Release of Data Sheet
MRFE8VP8600H
RF Device Data
Freescale Semiconductor, Inc.
11
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E 2015 Freescale Semiconductor, Inc.
MRFE8VP8600H
Document Number: MRFE8VP8600H
Rev. 0, 7/2015
12
RF Device Data
Freescale Semiconductor, Inc.