Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or digital television transmitters. • Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz. Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) ACPR (dBc) IRL (dB) DVB--T (8k OFDM) 125 Avg. 860 19.3 30.0 --60.5 --12 MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 470--860 MHz, 600 W, 50 V LDMOS BROADBAND RF POWER TRANSISTORS • Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulsed Width = 100 μsec, Duty Cycle = 10% Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) Pulsed 600 Peak 470 19.3 47.1 650 20.0 53.1 860 18.8 48.9 CASE 375D--05, STYLE 1 NI--1230 MRFE6VP8600HR6 Features • Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated Pout) • Exceptional Efficiency for Class AB Analog or Digital Television Operation • Full Performance across Complete UHF TV Spectrum, 470--860 MHz • Capable of 600 Watt CW Output Power with Adequate Thermal Management • Integrated Input Matching • Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V − Improves Class C Performance, e.g. in a Doherty Peaking Stage − Enables Fast, Easy and Complete Shutdown of the Amplifier • Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation • Excellent Thermal Characteristics • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. CASE 375E--04, STYLE 1 NI--1230S MRFE6VP8600HSR6 PARTS ARE PUSH--PULL Gate 1 3 1 Drain 1 Gate 2 4 2 Drain 2 Table 1. Maximum Ratings Rating Symbol Drain--Source Voltage VDSS Gate--Source Voltage Storage Temperature Range Value Unit --0.5, +130 Vdc VGS --6.0, +10 Vdc Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1052 5.26 W W/°C Operating Junction Temperature (1,2) TJ 225 °C (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2011. All rights reserved. MRFE6VP8600HR6 RF Device Data Freescale Semiconductor MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz RθJC 0.19 (3) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (2001--4000 V) Machine Model (per EIA/JESD22--A115) B (201--400 V) Charge Device Model (per JESD22--C101) IV (>1000 V) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Symbol Min Typ Max Unit IGSS — — 1 μAdc 130 140 — Vdc (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 5 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 980 μAdc) VGS(th) 1.5 2.07 2.5 Vdc Gate Quiescent Voltage (5) (VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGS(Q) 2.1 2.65 3.1 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.24 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 20 Adc) gfs — 15.6 — S Reverse Transfer Capacitance (6) (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.49 — pF Output Capacitance (6) (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 79.9 — pF Input Capacitance (7) (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 264 — pF On Characteristics Dynamic Characteristics (4) Functional Tests (5) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg., f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz. Power Gain Gps 18.0 19.3 21.0 dB Drain Efficiency ηD 29.0 30.0 — % ACPR — --60.5 --58.5 dBc IRL — --12 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact resistance of this TIM. 4. Each side of device measured separately. 5. Measurement made with device in push--pull configuration. 6. Part internally input matched. 7. Die capacitance value without internal matching. (continued) MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz, DVB--T (8k OFDM) Single Channel. Output Peak--to--Average Ratio @ 0.01% Probability on CCDF, Pout = 125 W Avg. Load Mismatch VSWR >65:1 at all Phase Angles, 3 dB Overdrive from Rated Pout (240 W Avg.) PAR Ψ — 7.8 — dB No Degradation in Output Power MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 3 R1 C1 C2 C13 C12 L1 C11 COAX3 COAX1 C19 C23* C7 C5 C14* C16* L2 C3 C4 C8* CUT OUT AREA C6 C15* COAX2 C18* C21 C20 C17* C22 COAX4 C24 MRFE6VP8600H Rev. 1 C9 C10 L3 C25 C26 R2 *C8, C14, C15, C16, C17, C18 and C23 are mounted vertically. Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB--T (8k OFDM) Table 5. MRFE6VP8600HR6(HSR6) Test Circuit Component Designations and Values — 860 MHz, DVB--T (8k OFDM) Part Description Part Number Manufacturer C1, C9 10 μF, 50 V, Chip Capacitors GRM55DR61H106KA88L Murata C2, C10 2.2 μF, 50 V, Chip Capacitors C3225X7R1H225K TDK C3, C4, C20, C21, C23 100 pF Chip Capacitors ATC100B101JT500XT ATC C5, C6 24 pF Chip Capacitors ATC100B240JT500XT ATC C7 0.8--8.0 pF Variable Capacitor 27291SL Johanson Components C8 12 pF Chip Capacitor ATC100B120JT500XT ATC C11, C24 2.2 μF, 100 V, Chip Capacitors C3225X7R2A225KT TDK C12, C25 4.7 μF, 100 V, Chip Capacitors GRM55ER72A475KA01B Murata C13, C26 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C14 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC C15 3.0 pF Chip Capacitor ATC100B3R0CT500XT ATC C16 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C17 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC C18 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C19, C22 1000 pF Chip Capacitors ATC100B102JT50XT ATC Coax1, 2, 3, 4 25 Ω SemiRigid Coax, Length 2.0” UT--141C--25 Micro--Coax L1, L3 5.0 nH, 2 Turn Inductors A02TKLC Coilcraft L2 2.5 nH, 1 Turn Inductor A01TKLC Coilcraft R1, R2 10 Ω, 1/4 W Chip Resistors CRCW120610R0JNEA Vishay PCB 0.030″, εr = 3.5 RO4350B Rogers MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 4 RF Device Data Freescale Semiconductor COAX1 Z19 L1 VBIAS R1 C2 C1 Z17 RF INPUT Z1 Z5 Z3 C3 Z2 Z7 Z9 Z11 Z13 Z15 Z12 Z14 Z16 C5 L2 Z6 C4 Z8 C7 Z10 C8 C6 Z4 Z18 R2 COAX2 C10 C9 + Z46 Z20 L3 VBIAS C12 VSUPPLY C13 C11 COAX3 Z44 Z21 Z23 Z25 Z27 Z29 Z31 Z33 Z35 Z37 C19 Z39 C20 DUT C14 C15 C16 C17 Z41 C18 C21 Z22 Z24 Z26 Z28 Z30 Z32 Z34 Z36 Z38 RF OUTPUT Z42 Z43 C23 Z40 C22 Z45 COAX4 C24 Z47 + C25 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 0.204″ x 0.062″ Microstrip 0.245″ x 0.080″ Microstrip 0.445″ x 0.060″ Microstrip 0.019″ x 0.100″ Microstrip 0.415″ x 0.400″ Microstrip 0.083″ x 0.400″ Microstrip 0.022″ x 0.400″ Microstrip 0.208″ x 0.850″ Microstrip 0.242″ x 0.960″ Microstrip Z17, Z18 Z19*, Z20* Z21, Z22 Z23, Z24 Z25, Z26 Z27, Z28 Z29, Z30 Z31, Z32 Z33, Z34 VSUPPLY C26 0.780″ x 0.080″ Microstrip 0.354″ x 0.080″ Microstrip 0.164″ x 0.520″ Microstrip 0.186″ x 0.520″ Microstrip 0.088″ x 0.420″ Microstrip 0.072″ x 0.420″ Microstrip 0.072″ x 0.420″ Microstrip 0.259″ x 0.420″ Microstrip 0.075″ x 0.420″ Microstrip Z35, Z36 Z37, Z38 Z39, Z40 Z41 Z42 Z43 Z44*, Z45* Z46, Z47 0.052″ x 0.420″ Microstrip 0.211″ x 0.100″ Microstrip 0.389″ x 0.060″ Microstrip 0.070″ x 0.080″ Microstrip 0.018″ x 0.080″ Microstrip 0.204″ x 0.062″ Microstrip 0.850″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip * Line length includes microstrip bends Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB--T (8k OFDM) MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 5 10 1.06 1.05 1.04 1400 mA 1.03 VDD = 50 Vdc IDS(Q) = 100 mA 1.02 1900 mA 1.01 2400 mA 1 0.99 0.98 0.97 0.96 0.95 0.94 40 Vdc 8 30 Vdc 20 Vdc 10 Vdc 7 6 5 4 3 2 1 --50 --25 0 25 50 75 0 2.1 100 2.2 2.4 2.5 2.3 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 TC, CASE TEMPERATURE (°C) VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 4. Normalized VGS Quiescent versus Case Temperature Note: Measured with both sides of the transistor tied together. 1000 Figure 5. Drain Current versus Gate--Source Voltage 64 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Coss 100 P3dB = 59.0 dBm (794 W) P2dB = 58.8 dBm (759 W) 62 Pout, OUTPUT POWER (dBm) 10 Crss 1 60 Ideal P1dB = 58.4 dBm (692 W) Actual 58 56 54 VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz Pulse Width = 100 μsec, Duty Cycle = 10% 52 50 0 10 20 30 40 32 50 33 34 35 36 37 38 39 40 41 42 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) Note: Each side of device measured separately. Figure 7. Pulsed CW Output Power versus Input Power Figure 6. Capacitance versus Drain--Source Voltage 60 22 VDD = 50 Vdc, IDQ = 1400 mA f = 860 MHz Pulse Width = 100 μsec Duty Cycle = 10% 21 Gps, POWER GAIN (dB) 43 20 50 Gps 40 30 19 ηD 18 20 10 17 16 10 100 ηD, DRAIN EFFICIENCY (%) C, CAPACITANCE (pF) VDD = 50 Vdc 9 IDD, DRAIN CURRENT (AMPS) NORMALIZED VGS(Q) TYPICAL CHARACTERISTICS — 860 MHz 0 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — DVB--T (8k OFDM) 100 --20 7.61 MHz --30 10 --50 DVB--T (8k OFDM) 64 QAM Data Carrier Modulation 5 Symbols 0.01 4 kHz BW ACPR Measured at 4 MHz Offset from Center Frequency --70 --80 --90 0.001 0.0001 4 kHz BW --60 0.1 (dB) DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols --100 --110 0 2 4 6 8 10 12 --5 --4 --3 --2 --1 0 1 2 3 4 f, FREQUENCY (MHz) Figure 9. Source Peak--to--Average DVB--T (8k OFDM) Figure 10. DVB--T (8k OFDM) Spectrum ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) PEAK--TO--AVERAGE (dB) 40 ACPR VDD = 50 Vdc, IDQ = 1400 mA f = 860 MHz, DVB--T (8k OFDM) 35 64 QAM Data Carrier Modulation 5 Symbols 30 --58 ηD --60 --62 25 Gps 20 --64 --66 15 10 20 --56 40 60 80 100 120 140 160 180 --68 200 5 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) PROBABILITY (%) --40 1 Pout, OUTPUT POWER (WATTS) AVG. Figure 11. Single--Carrier DVB--T (8k OFDM) Drain Efficiency, Power Gain and ACPR versus Output Power MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 109 VDD = 50 Vdc Pout = 125 W CW MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Note: The MTTF calculation for this graph is based on the thermal resistance of the part using thermal grease TIM mounting. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature -- CW VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg. f MHz Zsource Ω Zload Ω 860 1.14 + j0.88 2.61 + j1.84 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 13. Series Equivalent Source and Load Impedance MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 8 RF Device Data Freescale Semiconductor 470--860 MHz REFERENCE CIRCUIT VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF, TC = 50°C. Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) Output PAR (dB) IMD Shoulder (dBc) DVB--T (8k OFDM) 125 Avg. 470 19.0 27.2 8.2 --31.1 650 20.3 30.6 7.6 --30.3 860 19.0 27.9 7.7 --30.4 C1 C2 C17 C16 R1 COAX1 C3 COAX3 C20 C22* C6 C12* C10 C8 C7 C23* C33* C28* C27* C25* C34 C32 C26* C24* C9* C31 C21* C6 C4 C5 C19 C18 L1 C29* C30* C11* C35 C15 COAX2 Q1 C36 COAX4 MRFE6VP8600H Rev. 1 C13 C14 L2 C39 R2 C37 C40 C38 *C9, C11, C12, C21, C22, C23, C24, C25, C26, C27, C28, C29, C30 and C33 are mounted vertically. Figure 14. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Layout — 470--860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 9 470--860 MHz REFERENCE CIRCUIT Table 6. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Designations and Values — 470--860 MHz Part Description Part Number Manufacturer C1, C13 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C2, C14 2.2 μF, 50 V Chip Capacitors C3225X7R1H225K TDK C3, C15 10 pF Chip Capacitors ATC100B100JT500XT ATC C4, C5 47 pF Chip Capacitors ATC100B470JT500XT ATC C6, C7 27 pF Chip Capacitors ATC100B270JT500XT ATC C8, C10 0.8--8.0 pF Variable Capacitors 27291SL Johanson Components C9, C28 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C11, C12 6.8 pF Chip Capacitors ATC800B6R8BT500XT ATC C16, C37 39,000 pF Chip Capacitors ATC200B393KT50XT ATC C17, C38 2.2 μF, 100 V Chip Capacitors C3225X7R2A225KT TDK C18, C39 4.7 μF, 100 V Chip Capacitors GRM55ER72A475KA01B Murata C19, C40 220 μF, 100 V Electrolytic Capacitors EEV--FK2A221M Panasonic--ECG C20, C36 56 pF Chip Capacitors ATC100B560CT500XT ATC C21, C25, C29 7.5 pF Chip Capacitors ATC800B7R5CT500XT ATC C22, C30 8.2 pF Chip Capacitors ATC800B8R2CT500XT ATC C23 13 pF Chip Capacitor ATC800B130JT500XT ATC C24 9.1 pF Chip Capacitor ATC800B9R1CT500XT ATC C26 3.3 pF Chip Capacitor ATC800B3R3CT500XT ATC C27 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC C31, C35 1,000 pF Chip Capacitors ATC100B102JT50XT ATC C32, C33, C34 120 pF Chip Capacitors ATC100B121JT500XT ATC L1, L2 5.0 nH, 2 Turn Inductors A02TKLC Coilcraft R1, R2 10 Ω, 1/4 W Chip Resistors CRCW120610R0JNEA Vishay Coax1, 2, 3, 4 25 Ω SemiRigid Coax, Length 2.0″ UT--141C--25 Micro--Coax Q1 RF Power LDMOS Transistor MRFE6VP8600HR6 Freescale PCB 0.030″, εr = 3.5 RO4350B Rogers Table 7. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Microstrips — 470--860 MHz Microstrip Description Microstrip Description Z1 0.204″ x 0.062″ Microstrip Z33, Z34 0.038″ x 0.520″ Microstrip Z2 0.245″ x 0.080″ Microstrip Z35, Z36 0.170″ x 0.420″ Microstrip Z3, Z4 0.445″ x 0.060″ Microstrip Z37, Z38 0.269″ x 0.420″ Microstrip Z5, Z6 0.019″ x 0.100″ Microstrip Z39, Z40 0.069″ x 0.420″ Microstrip Z7, Z8 0.305″ x 0.400″ Microstrip Z41, Z42 0.075″ x 0.420″ Microstrip Z9, Z10 0.083″ x 0.400″ Microstrip Z43, Z44 0.038″ x 0.420″ Microstrip Z11, Z12 0.095″ x 0.400″ Microstrip Z45, Z46 0.038″ x 0.100″ Microstrip Z13, Z14 0.055″ x 0.850″ Microstrip Z47, Z48 0.075″ x 0.100″ Microstrip Z15, Z16 0.083″ x 0.850″ Microstrip Z49, Z50 0.169″ x 0.100″ Microstrip Z17, Z18 0.071″ x 0.850″ Microstrip Z51, Z52 0.389″ x 0.060″ Microstrip Z19, Z20 0.187″ x 0.960″ Microstrip Z53 0.070″ x 0.080″ Microstrip Z21, Z22 0.055″ x 0.960″ Microstrip Z54 0.018″ x 0.080″ Microstrip Z23, Z24 0.780″ x 0.080″ Microstrip Z55 0.204″ x 0.062″ Microstrip Z25*, Z26* 0.354″ x 0.080″ Microstrip Z56, Z57 0.278″ x 0.080″ Microstrip Z27, Z28 0.164″ x 0.520″ Microstrip Z58*, Z59* 0.886″ x 0.080″ Microstrip Z29, Z30 0.074″ x 0.520″ Microstrip Z31, Z32 0.075″ x 0.520″ Microstrip * Line length includes microstrip bends MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 10 RF Device Data Freescale Semiconductor 470--860 MHz REFERENCE CIRCUIT COAX1 Z25 L1 VBIAS C1 C2 R1 C3 Z23 RF INPUT Z1 Z5 Z3 C4 Z2 Z7 Z9 Z11 Z13 Z15 Z17 Z19 Z21 Z8 C8 Z10 C9 Z12 Z14 C10 Z16 C11 Z18 C12 Z20 Z22 C6 Z6 C5 C7 Z4 Z24 C15 R2 COAX2 L2 VBIAS C13 Z58 C16 C17 C18 Z56 Z29 Z31 Z33 Z35 Z37 C14 + VSUPPLY C19 C20 Z27 Z26 Z39 C21 C22 Z41 Z43 Z45 COAX3 Z47 Z49 C31 Z51 C32 Q1 C23 C24 C25 C26 C27 C28 C34 Z28 Z30 Z32 Z34 Z36 Z38 Z40 Z42 Z44 Z46 Z48 Z50 RF Z54 Z55 OUTPUT Z53 C33 Z52 C35 Z57 C29 C30 COAX4 C36 Z59 + VSUPPLY C37 C38 C39 C40 Figure 15. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Schematic — 470--860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 11 TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT 21 60 19 50 40 Gps 665 MHz 18 30 860 MHz 665 MHz 860 MHz 470 MHz 17 20 470 MHz 16 10 ηD 15 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) VDD = 50 Vdc, IDQ = 1400 mA Pulse Width = 100 μsec 20 Duty Cycle = 10% 0 10 100 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 16. Broadband Pulsed Power Gain and Drain Efficiency versus Output Power — 470--860 MHz 21 66 Gps 58 Gps, POWER GAIN (dB) 19 ηD 18 54 17 50 16 46 IRL 42 15 14 13 400 VDD = 50 Vdc, Pout = 600 W Peak, IDQ = 1400 mA Pulse Width = 100 μsec, Duty Cycle = 10% 450 500 550 600 650 700 750 800 850 --5 --7 --6 38 --11 34 900 --13 IRL, INPUT RETURN LOSS (dB) 62 ηD, DRAIN EFFICIENCY (%) 20 f, FREQUENCY (MHz) 35 VDD = 50 Vdc, IDQ = 1400 mA DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols 30 665 MHz 860 MHz 470 MHz ηD 25 --10 --15 Gps 20 665 MHz 860 MHz ηD, DRAIN EFFICIENCY (%) --5 15 860 MHz 5 40 --25 --30 665 MHz 0 470 MHz IMD(1) 470 MHz 10 --20 80 120 160 IMD, INTERMODULATION DISTORTION SHOULDER (dBc) Gps, POWER GAIN (dB) Figure 17. Broadband Pulsed Power Gain, Drain Efficiency and IRL versus Frequency --35 200 Pout, OUTPUT POWER (WATTS) AVG. (1) Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power — 470--860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 12 RF Device Data Freescale Semiconductor 40 35 665 MHz ηD 0 860 MHz 470 MHz 30 --5 --10 25 Gps 20 ηD, DRAIN EFFICIENCY (%) 5 VDD = 50 Vdc, IDQ = 700 mA DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols 665 MHz 860 MHz 470 MHz 15 665 MHz 470 MHz 10 --15 IMD(1) -- 860 MHz 5 0 40 80 120 --20 --25 IMD, INTERMODULATION DISTORTION SHOULDER (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT --30 200 160 Pout, OUTPUT POWER (WATTS) AVG. (1) Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 19. DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power — 470--860 MHz 22 0 --1 --2 TC = 35°C 19 18 Gps --3 --4 75°C 50°C --5 --6 --7 17 IRL 16 15 14 13 12 11 10 450 VDD = 50 Vdc, Pout = 125 W Avg. IDQ = 1400 mA, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols 500 550 600 650 700 750 75°C 800 --8 --9 50°C --10 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 21 20 --11 35°C --12 850 900 f, FREQUENCY (MHz) Figure 20. Broadband Power Gain and IRL versus Frequency --15 VDD = 50 Vdc, Pout = 125 W Avg., IDQ = 1400 mA DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols 35 --17 --19 ηD, DRAIN EFFICIENCY (%) 33 31 ηD --21 TC = 35°C 29 --23 75°C 27 --25 25 50°C --27 23 75°C IMD(1) 21 --29 --31 35°C IMD, INTERMODULATION DISTORTION SHOULDER (dBc) 37 50°C --33 19 17 450 500 550 600 650 700 750 800 850 --35 900 f, FREQUENCY (MHz) (1) Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 13 470--860 MHz REFERENCE CIRCUIT Zo = 10 Ω f = 860 MHz f = 470 MHz Zload f = 860 MHz Zsource f = 470 MHz VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg. f MHz Zsource Ω Zload Ω 470 1.96 -- j3.13 5.30 + j1.92 500 1.91 -- j2.46 4.65 + j1.95 530 1.88 -- j1.86 4.50 + j2.35 560 1.91 -- j1.37 4.71 + j2.66 590 1.93 -- j0.94 5.40 + j2.75 620 1.99 -- j0.49 5.93 + j2.29 650 2.11 -- j0.14 6.03 + j1.81 680 2.17 + j0.02 6.04 + j1.45 710 2.14 + j0.26 5.58 + j0.95 740 2.11 + j0.32 5.37 + j0.80 770 1.92 + j0.56 4.80 + j0.56 800 1.65 + j0.91 4.78 + j0.55 830 1.50 + j1.07 4.59 + j0.45 860 0.95 + j1.72 3.93 + j0.11 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 22. Broadband Series Equivalent Source and Load Impedance — 470--860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 15 MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 16 RF Device Data Freescale Semiconductor MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 17 MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents to aid your design process. Application Notes • AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2011 • Initial Release of Data Sheet 1 Sept. 2011 • Added Fig. 19, DVB--T (8k OFDM) Drain Efficiency, Power Gain and IMD Shoulder versus Output Power -470--860 MHz @ 700 mA to indicate efficiency gains with appropriate precorrection systems, p. 13 MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Document Number: MRFE6VP8600H Rev. 1, 9/2011 20 RF Device Data Freescale Semiconductor